J.R. Liefting

412 total citations
21 papers, 331 citations indexed

About

J.R. Liefting is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, J.R. Liefting has authored 21 papers receiving a total of 331 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 13 papers in Computational Mechanics and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in J.R. Liefting's work include Silicon and Solar Cell Technologies (18 papers), Integrated Circuits and Semiconductor Failure Analysis (15 papers) and Ion-surface interactions and analysis (13 papers). J.R. Liefting is often cited by papers focused on Silicon and Solar Cell Technologies (18 papers), Integrated Circuits and Semiconductor Failure Analysis (15 papers) and Ion-surface interactions and analysis (13 papers). J.R. Liefting collaborates with scholars based in Netherlands, Belgium and China. J.R. Liefting's co-authors include F. W. Saris, R.J. Schreutelkamp, J. S. Custer, Cynthia A. Volkert, P. M. Zagwijn, Yiming Qian, F.W. Saris, Ruoming Tian, V. Raineri and Qing‐Tai Zhao and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Thin Solid Films.

In The Last Decade

J.R. Liefting

21 papers receiving 318 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J.R. Liefting Netherlands	11	291	153	111	59	43	21	331
T. Inada Japan	11	397 1.4×	107 0.7×	214 1.9×	111 1.9×	48 1.1×	51	465
A. Mitwalsky Germany	10	219 0.8×	46 0.3×	96 0.9×	128 2.2×	36 0.8×	21	284
R.A. Kushner United States	9	250 0.9×	90 0.6×	49 0.4×	97 1.6×	35 0.8×	18	323
J. L. Tandon United States	13	327 1.1×	58 0.4×	225 2.0×	68 1.2×	65 1.5×	40	388
A. S. Yapsir United States	12	251 0.9×	78 0.5×	128 1.2×	50 0.8×	91 2.1×	23	320
Mototaka Kamoshida Japan	10	232 0.8×	69 0.5×	62 0.6×	68 1.2×	18 0.4×	34	281
R. W. Bicknell United Kingdom	11	293 1.0×	100 0.7×	128 1.2×	113 1.9×	26 0.6×	23	363
A. Grouillet France	11	257 0.9×	58 0.4×	68 0.6×	56 0.9×	49 1.1×	35	290
B. Mizuno Japan	11	305 1.0×	54 0.4×	71 0.6×	101 1.7×	101 2.3×	41	353

Countries citing papers authored by J.R. Liefting

Since Specialization

Citations

This map shows the geographic impact of J.R. Liefting's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.R. Liefting with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.R. Liefting more than expected).

Fields of papers citing papers by J.R. Liefting

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.R. Liefting. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.R. Liefting. The network helps show where J.R. Liefting may publish in the future.

Co-authorship network of co-authors of J.R. Liefting

This figure shows the co-authorship network connecting the top 25 collaborators of J.R. Liefting. A scholar is included among the top collaborators of J.R. Liefting based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.R. Liefting. J.R. Liefting is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Volkert, Cynthia A., et al.. (1994). Deformation mechanisms of Al films on oxidized Si wafers. Journal of materials research/Pratt's guide to venture capital sources. 9(5). 1147–1155. 49 indexed citations

Liefting, J.R., J. S. Custer, & F. W. Saris. (1994). Time evolution of dislocation formation in ion implanted silicon. Materials Science and Engineering B. 25(1). 60–67. 13 indexed citations

Liefting, J.R., R.J. Schreutelkamp, Jan Vanhellemont, et al.. (1993). Electrically active, ion implanted boron at the solubility limit in silicon. Applied Physics Letters. 63(8). 1134–1136. 12 indexed citations

Bársony, I., et al.. (1993). Optimization of ion implantation damage annealing by means of high-resolution X-ray diffraction. Thin Solid Films. 235(1-2). 189–197. 5 indexed citations

Liefting, J.R., J. S. Custer, R.J. Schreutelkamp, & F. W. Saris. (1992). Dislocation formation in silicon implanted at different temperatures. Materials Science and Engineering B. 15(2). 173–186. 10 indexed citations

Zhao, Qing‐Tai, et al.. (1992). Reduction of secondary defects in MeV ion-implanted silicon by means of ion beam defect engineering. Journal of Applied Physics. 71(8). 3780–3784. 18 indexed citations

Liefting, J.R., et al.. (1992). Improvement of device characteristics by multiple step implants or introducing a C gettering layer. Microelectronic Engineering. 19(1-4). 543–546. 1 indexed citations

Schreutelkamp, R.J., J. S. Custer, V. Raineri, et al.. (1992). The role of extended defects on transient boron diffusion in ion-implanted silicon. Materials Science and Engineering B. 12(4). 307–325. 11 indexed citations

Schreutelkamp, R.J., et al.. (1992). Pre-amorphization damage in Si(100) implanted with high mass MeV ions. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 62(3). 372–376. 6 indexed citations

10.

Schreutelkamp, R.J., J. S. Custer, J.R. Liefting, & F. W. Saris. (1991). Avoiding preamorphization damage in MeV heavy ion-implanted silicon. Applied Physics Letters. 58(24). 2827–2829. 10 indexed citations

11.

Liefting, J.R., V. Raineri, R.J. Schreutelkamp, J. S. Custer, & F. W. Saris. (1991). Avoiding Dislocation Formation for B, P, and As Implants in Silicon. MRS Proceedings. 235. 7 indexed citations

12.

Liefting, J.R., J. S. Custer, & F. W. Saris. (1991). C Implantation for Suppression of Dislocation Formation. MRS Proceedings. 235. 14 indexed citations

13.

Schreutelkamp, R.J., et al.. (1991). Reduction of secondary defect formation in MeV As ion implanted Si(100). Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 59-60. 614–618. 3 indexed citations

14.

Schreutelkamp, R.J., et al.. (1991). Pre-amorphization damage in ion-implanted silicon. 6(7-8). 275–366. 102 indexed citations

15.

Custer, J. S., Michael O. Thompson, D. J. Eaglesham, et al.. (1990). Epitaxy and Nucleation in Cu and Ag Doped Amorphous Si. MRS Proceedings. 205. 2 indexed citations

16.

Schreutelkamp, R.J., et al.. (1990). Range straggling of MeV ions in amorphous silicon: Discrepancies with TRIM. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 48(1-4). 448–452. 25 indexed citations

17.

Schreutelkamp, R.J., et al.. (1990). Addendum to “range straggling of MeV ions in amorphous silicon; discrepancies with TRIM”. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 47(3). 329–331. 7 indexed citations

18.

Verhoef, L.A., et al.. (1990). 3D-resolved determination of minority-carrier lifetime in planar silicon solar cells by photocurrent decay. Journal of Applied Physics. 68(12). 6485–6494. 4 indexed citations

19.

Qian, Yiming, et al.. (1989). Reduction of secondary defect formation in MeV B+ ion-implanted Si (100). Applied Physics Letters. 55(18). 1838–1840. 27 indexed citations

20.

Liefting, J.R., et al.. (1989). Gettering of Cu at Buried Damage Layers Made by Si Self Implantation. MRS Proceedings. 157. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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