A. S. Yapsir

400 total citations
23 papers, 320 citations indexed

About

A. S. Yapsir is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Mechanics of Materials. According to data from OpenAlex, A. S. Yapsir has authored 23 papers receiving a total of 320 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 12 papers in Atomic and Molecular Physics, and Optics and 5 papers in Mechanics of Materials. Recurrent topics in A. S. Yapsir's work include Semiconductor materials and interfaces (11 papers), Silicon and Solar Cell Technologies (11 papers) and Semiconductor materials and devices (11 papers). A. S. Yapsir is often cited by papers focused on Semiconductor materials and interfaces (11 papers), Silicon and Solar Cell Technologies (11 papers) and Semiconductor materials and devices (11 papers). A. S. Yapsir collaborates with scholars based in United States and Japan. A. S. Yapsir's co-authors include C. H. Choi, T.‐M. Lu, T.‐M. Lu, Toh‐Ming Lu, W. A. Lanford, Tianlin Lu, Robert A. Harper, H. Bakhru, J. C. Corelli and J. W. Corbett and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

A. S. Yapsir

23 papers receiving 309 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. S. Yapsir United States 12 251 128 91 78 67 23 320
R. R. Kola United States 10 223 0.9× 63 0.5× 75 0.8× 29 0.4× 47 0.7× 40 311
Tianlin Lu United States 12 212 0.8× 129 1.0× 78 0.9× 33 0.4× 143 2.1× 21 363
M. L. Green United States 8 401 1.6× 66 0.5× 73 0.8× 46 0.6× 81 1.2× 9 442
Chuck Ramiller United States 6 213 0.8× 155 1.2× 99 1.1× 16 0.2× 71 1.1× 6 314
J.R. Liefting Netherlands 11 291 1.2× 111 0.9× 43 0.5× 153 2.0× 30 0.4× 21 331
A. Mitwalsky Germany 10 219 0.9× 96 0.8× 36 0.4× 46 0.6× 34 0.5× 21 284
R. V. Knoell United States 11 492 2.0× 228 1.8× 53 0.6× 208 2.7× 34 0.5× 21 600
H.‐J. Hinneberg Germany 12 247 1.0× 231 1.8× 185 2.0× 80 1.0× 31 0.5× 39 509
M. Naiman United States 12 414 1.6× 59 0.5× 22 0.2× 39 0.5× 74 1.1× 18 459
E. Lane United States 12 321 1.3× 116 0.9× 116 1.3× 16 0.2× 35 0.5× 31 374

Countries citing papers authored by A. S. Yapsir

Since Specialization
Citations

This map shows the geographic impact of A. S. Yapsir's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. S. Yapsir with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. S. Yapsir more than expected).

Fields of papers citing papers by A. S. Yapsir

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. S. Yapsir. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. S. Yapsir. The network helps show where A. S. Yapsir may publish in the future.

Co-authorship network of co-authors of A. S. Yapsir

This figure shows the co-authorship network connecting the top 25 collaborators of A. S. Yapsir. A scholar is included among the top collaborators of A. S. Yapsir based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. S. Yapsir. A. S. Yapsir is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Chen, Baian, A. S. Yapsir, S. Wu, et al.. (2002). 0.25 μm low power CMOS devices and circuits from 8 inch SOI materials. 260–262. 5 indexed citations
2.
Voldman, Steven H., R. Schulz, J. K. Howard, et al.. (1998). CMOS-on-SOI ESD protection networks. Journal of Electrostatics. 42(4). 333–350. 14 indexed citations
3.
Ganin, E., Shalom J. Wind, P. Ronsheim, et al.. (1993). TiSi2 Formation on Submicron Polysilicon Lines: Role of Line Width and Dopant Concentration. MRS Proceedings. 303. 10 indexed citations
4.
Yapsir, A. S.. (1992). Dry surface cleaning in integrated vacuum reactive ion etching processes. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 10(4). 792–794. 3 indexed citations
5.
Yapsir, A. S., et al.. (1990). Near‐surface damage and contamination of silicon following electron cyclotron resonance etching. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 8(3). 2939–2944. 19 indexed citations
6.
Yapsir, A. S., et al.. (1990). X-ray photoemission and Raman scattering spectroscopic study of surface modifications of silicon induced by electron cyclotron resonance etching. Applied Physics Letters. 57(6). 590–592. 4 indexed citations
7.
Yapsir, A. S., et al.. (1989). Electromigration in Al/SiO2 films prepared by a partially ionized beam deposition technique. Applied Physics Letters. 54(24). 2443–2445. 19 indexed citations
8.
Lindström, J. L., G. S. Oehrlein, G. Scilla, A. S. Yapsir, & J. W. Corbett. (1989). Effects of deuterium plasmas on silicon near-surface properties. Journal of Applied Physics. 65(8). 3297–3300. 8 indexed citations
9.
Jin, Ho, A. S. Yapsir, G.-C. Wang, et al.. (1989). Channeling study of epitaxial Al and Ag films on Si(111) substrates. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 40-41. 817–822. 4 indexed citations
10.
Yapsir, A. S., et al.. (1989). Partially ionized beam deposition of oriented films. Journal of materials research/Pratt's guide to venture capital sources. 4(2). 343–349. 20 indexed citations
11.
Yapsir, A. S.. (1988). Ion Implantation Effects on the Metal-Semiconductor Interfaces.. PhDT. 1 indexed citations
12.
Yapsir, A. S., et al.. (1988). Electrical characteristics of hydrogen implanted silicon Schottky diodes having large difference in metal work function. Journal of Applied Physics. 63(10). 5040–5043. 6 indexed citations
13.
Yapsir, A. S., et al.. (1988). Structural Effects in Al(111)/Si(111) Heteroepitaxy by Partially Ionized Beam Deposition α. MRS Proceedings. 116. 465–470. 3 indexed citations
14.
Yapsir, A. S., et al.. (1988). Formation of low-temperature Al/n-Si Schottky contacts using a partially ionized beam deposition technique. Applied Physics Letters. 53(10). 905–907. 11 indexed citations
15.
Yapsir, A. S., T.‐M. Lu, & W. A. Lanford. (1988). Reduction of interface hydrogen content by partially ionized beam deposition technique. Applied Physics Letters. 52(23). 1962–1964. 21 indexed citations
16.
Yapsir, A. S., T.‐M. Lu, J. C. Corelli, et al.. (1988). Defect centers and changes in the electrical characteristics of Al/n-type Si Schottky diodes induced by hydrogen-ion implantations. Physical review. B, Condensed matter. 37(15). 8982–8987. 14 indexed citations
17.
Yapsir, A. S., et al.. (1987). Effects of hydrogen ion implantation on Al/Si Schottky diodes. Applied Physics Letters. 50(21). 1530–1532. 25 indexed citations
18.
Jin, Ho, A. S. Yapsir, T.‐M. Lu, et al.. (1987). Channeling study of structural effects at the Al(111)/Si(111) interface formed by ionized cluster beam deposition. Applied Physics Letters. 50(16). 1062–1064. 20 indexed citations
19.
Choi, C. H., Robert A. Harper, A. S. Yapsir, & T.‐M. Lu. (1987). Epitaxial growth of Al(111)/Si(111) films using partially ionized beam deposition. Applied Physics Letters. 51(24). 1992–1994. 43 indexed citations
20.
Yapsir, A. S., et al.. (1987). PtSi/n-type Si Schottky barrier height change by H+ ion implantation near the interface region. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 19-20. 431–433. 1 indexed citations

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