Asuha

515 total citations
16 papers, 473 citations indexed

About

Asuha is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Asuha has authored 16 papers receiving a total of 473 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electrical and Electronic Engineering, 11 papers in Materials Chemistry and 5 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Asuha's work include Semiconductor materials and devices (16 papers), Silicon Nanostructures and Photoluminescence (9 papers) and Integrated Circuits and Semiconductor Failure Analysis (7 papers). Asuha is often cited by papers focused on Semiconductor materials and devices (16 papers), Silicon Nanostructures and Photoluminescence (9 papers) and Integrated Circuits and Semiconductor Failure Analysis (7 papers). Asuha collaborates with scholars based in Japan, China and United States. Asuha's co-authors include Hikaru Kobayashi, Masao Takahashi, Shigeki Imai, Osamu Maida, Takuya Kobayashi, Yoshihiro Todokoro, Morio Inoue, H. Kobayashi, Masato Tanaka and Kentaro Imamura and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Asuha

16 papers receiving 460 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Asuha Japan	13	453	263	109	56	17	16	473
Z. Alexieva Bulgaria	6	419 0.9×	172 0.7×	153 1.4×	54 1.0×	18 1.1×	12	458
Taeko Ikarashi Japan	13	319 0.7×	172 0.7×	99 0.9×	39 0.7×	25 1.5×	24	373
S. T. Chang Taiwan	10	445 1.0×	186 0.7×	119 1.1×	79 1.4×	18 1.1×	20	480
D. Iencinella Italy	8	290 0.6×	159 0.6×	78 0.7×	82 1.5×	7 0.4×	14	326
J. Penaud Belgium	10	354 0.8×	136 0.5×	157 1.4×	57 1.0×	22 1.3×	31	372
Tomo Ueno Japan	11	288 0.6×	217 0.8×	61 0.6×	54 1.0×	61 3.6×	36	358
M. Koike Japan	13	369 0.8×	140 0.5×	90 0.8×	71 1.3×	21 1.2×	34	429
G. Agostinelli Belgium	11	621 1.4×	266 1.0×	197 1.8×	69 1.2×	10 0.6×	29	652
Ralf Jonczyk United States	7	338 0.7×	116 0.4×	148 1.4×	47 0.8×	6 0.4×	20	378
B. A. Ek United States	10	269 0.6×	140 0.5×	111 1.0×	80 1.4×	8 0.5×	12	316

Countries citing papers authored by Asuha

Since Specialization

Citations

This map shows the geographic impact of Asuha's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Asuha with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Asuha more than expected).

Fields of papers citing papers by Asuha

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Asuha. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Asuha. The network helps show where Asuha may publish in the future.

Co-authorship network of co-authors of Asuha

This figure shows the co-authorship network connecting the top 25 collaborators of Asuha. A scholar is included among the top collaborators of Asuha based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Asuha. Asuha is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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16 of 16 papers shown

Kobayashi, H., et al.. (2010). Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO2/Si and SiO2/SiC structures. Applied Surface Science. 256(19). 5744–5756. 41 indexed citations

Imamura, Kentaro, et al.. (2010). Nitric acid oxidation of Si method at 120 °C: HNO3 concentration dependence. Journal of Applied Physics. 107(5). 15 indexed citations

Matsumoto, Tsubasa, et al.. (2009). Low temperature formation of SiO2 thin films by nitric acid oxidation of Si (NAOS) and application to thin film transistor (TFT). Microelectronic Engineering. 86(7-9). 1939–1941. 9 indexed citations

Imai, Shigeki, et al.. (2008). Properties of thick SiO2/Si structure formed at 120°C by use of two-step nitric acid oxidation method. Applied Surface Science. 254(24). 8054–8058. 20 indexed citations

Kim, Woo‐Byoung, Asuha, Taketoshi Matsumoto, & Hikaru Kobayashi. (2008). Ultrathin SiO2 layer on atomically flat Si(111) surfaces with excellent electrical characteristics formed by nitric acid oxidation method. Applied Physics Letters. 93(7). 21 indexed citations

Imai, Shigeki, et al.. (2007). Nitric acid method for fabrication of gate oxides in TFT. Applied Surface Science. 254(12). 3685–3689. 20 indexed citations

Asuha, et al.. (2006). Formation of 10–30nm SiO2/Si structure with a uniform thickness at ∼120°C by nitric acid oxidation method. Surface Science. 600(12). 2523–2527. 46 indexed citations

Imai, Shigeki, Masayuki Fujimoto, Asuha, Masao Takahashi, & Hikaru Kobayashi. (2005). Formation of atomically smooth SiO2/SiC interfaces at ∼120°C by use of nitric acid oxidation method. Surface Science. 600(3). 547–550. 20 indexed citations

Asuha, Shigeki Imai, Masao Takahashi, & Hikaru Kobayashi. (2004). Nitric acid oxidation of silicon at ∼120°C to form 3.5-nm SiO2∕Si structure with good electrical characteristics. Applied Physics Letters. 85(17). 3783–3785. 46 indexed citations

10.

Asuha, et al.. (2004). Postoxidation Annealing Treatments to Improve Si/Ultrathin SiO[sub 2] Characteristics Formed by Nitric Acid Oxidation. Journal of The Electrochemical Society. 151(12). G824–G824. 32 indexed citations

11.

Takahashi, Masao, Masafumi Tamura, Asuha, Takuya Kobayashi, & Hikaru Kobayashi. (2003). Ultrathin silicon oxynitride formed by low-energy electron impact plasma nitridation and chemical oxidation methods. Journal of Applied Physics. 94(1). 726–731. 6 indexed citations

12.

Asuha, et al.. (2003). Spectroscopic and electrical properties of ultrathin SiO2 layers formed with nitric acid. Surface Science. 547(3). 275–283. 40 indexed citations

13.

Asuha, T. Yuasa, Osamu Maida, & Hikaru Kobayashi. (2002). Effects of postmetallization annealing on ultrathin SiO2 layer properties. Applied Physics Letters. 80(22). 4175–4177. 28 indexed citations

14.

Asano, Akira, Asuha, Osamu Maida, Yoshihiro Todokoro, & Hikaru Kobayashi. (2002). Decrease in the leakage current density of Si-based metal–oxide–semiconductor diodes by cyanide treatment. Applied Physics Letters. 80(24). 4552–4554. 35 indexed citations

15.

Asuha, Takuya Kobayashi, Osamu Maida, et al.. (2002). Ultrathin silicon dioxide layers with a low leakage current density formed by chemical oxidation of Si. Applied Physics Letters. 81(18). 3410–3412. 93 indexed citations

16.

Yuasa, T., Asuha, Kenji Yoneda, Yoshihiro Todokoro, & Hikaru Kobayashi. (2000). Reduction in leakage current density of Si-based metal–oxide–semiconductor structure by use of catalytic activity of a platinum overlayer. Applied Physics Letters. 77(24). 4031–4033. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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