Walter Henderson

655 total citations
33 papers, 520 citations indexed

About

Walter Henderson is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, Walter Henderson has authored 33 papers receiving a total of 520 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 16 papers in Condensed Matter Physics and 12 papers in Materials Chemistry. Recurrent topics in Walter Henderson's work include GaN-based semiconductor devices and materials (16 papers), Semiconductor materials and devices (12 papers) and Ga2O3 and related materials (9 papers). Walter Henderson is often cited by papers focused on GaN-based semiconductor devices and materials (16 papers), Semiconductor materials and devices (12 papers) and Ga2O3 and related materials (9 papers). Walter Henderson collaborates with scholars based in United States, United Kingdom and China. Walter Henderson's co-authors include W. Alan Doolittle, Gon Namkoong, Shawn D. Burnham, Michael W. Moseley, Thomas Hu, Mayar Allam, Ahmet F. Coskun, Shuangyi Cai, Alexander N. Cartwright and Maurice C.-K. Cheung and has published in prestigious journals such as Nature Communications, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Walter Henderson

33 papers receiving 510 citations

Peers

Countries citing papers authored by Walter Henderson

Since Specialization

Citations

This map shows the geographic impact of Walter Henderson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Walter Henderson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Walter Henderson more than expected).

Fields of papers citing papers by Walter Henderson

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Walter Henderson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Walter Henderson. The network helps show where Walter Henderson may publish in the future.

Co-authorship network of co-authors of Walter Henderson

This figure shows the co-authorship network connecting the top 25 collaborators of Walter Henderson. A scholar is included among the top collaborators of Walter Henderson based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Walter Henderson. Walter Henderson is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Single-cell spatial metabolomics with cell-type specific protein profiling for tissue systems biology 2023 ·Nature Communications ·Thomas Hu, Mayar Allam, Shuangyi Cai, Walter Henderson, Brian Yueh, (unknown), Anton V. Ievlev, Maryam Afkarian, Semir Beyaz, Ahmet F. Coskun	73
2	Spatially resolved 3D metabolomic profiling in tissues 2021 ·Science Advances ·(unknown), Thomas Hu, Eric Woods, Mayar Allam, Shuangyi Cai, Walter Henderson, Ahmet F. Coskun	38
3	ALD TiO_xas a top-gate dielectric and passivation layer for InGaZnO₁₁₅ISFETs 2017 ·Semiconductor Science and Technology ·Spyridon Pavlidis, B. Bayraktaroglu, Kevin Leedy, Walter Henderson, Eric M. Vogel, Oliver Brand	5
4	A mechanistic study of the interaction of water-soluble borate glass with apatite-bound heterocyclic nitrogen-containing bisphosphonates 2015 ·Acta Biomaterialia ·Chandrani Pramanik, (unknown), Li‐na Niu, He Yuan, Sushanta Ghoshal, Walter Henderson, Yaodong Liu, Seung Soon Jang, Satish Kumar, David H. Pashley, Franklin R. Tay	6
5	Impact of Microstructure on Dielectric Nanocomposites With High-<italic>k</italic> Interfacial Layers 2015 ·IEEE Transactions on Nanotechnology ·Jeffrey A. Davis, Devin K. Brown, Walter Henderson	1
6	A versatile metal-halide vapor chemistry for the epitaxial growth of metallic, insulating and semiconducting films 2011 ·Journal of Crystal Growth ·Walter Henderson, (unknown), (unknown), Hang Chen, W. Alan Doolittle	17
7	Transient atomic behavior and surface kinetics of GaN 2009 ·Journal of Applied Physics ·Michael W. Moseley, (unknown), Walter Henderson, (unknown), W. Alan Doolittle	43
8	Mixed alkyl exchange and exploitable surface interactions in InGaN by NH3-based metal organic molecular beam epitaxy 2008 ·Journal of Crystal Growth ·(unknown), Walter Henderson, (unknown), W. Alan Doolittle	2
9	Investigation into the use of molecular hydrogen on the growth of gallium nitride via metal‐organic molecular beam epitaxy 2008 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·(unknown), (unknown), Walter Henderson, (unknown), Shawn D. Burnham, W. Alan Doolittle	1
10	Growth and characterization of AlxGa1−xN via NH3-based metal-organic molecular beam epitaxy 2008 ·Journal of Crystal Growth ·(unknown), Walter Henderson, (unknown), W. Alan Doolittle	4
11	Closed‐loop MBE growth of droplet‐free GaN with very metal rich conditions using Metal Modulated Epitaxy with Mg and In 2008 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Shawn D. Burnham, Walter Henderson, W. Alan Doolittle	20
12	An investigation of the effects of radiation exposure on stability constraints in epitaxial SiGe strained layers 2006 ·Solid-State Electronics ·Tianbing Chen, Akil K. Sutton, B.M. Haugerud, Walter Henderson, A. P. Gnana Prakash, John D. Cressler, (unknown), Xuefeng Liu, Alvin Joseph, Paul W. Marshall	1
13	Influence of growth conditions and surface reaction byproducts on GaN grown via metal organic molecular beam epitaxy: Toward an understanding of surface reaction chemistry 2006 ·Journal of Electronic Materials ·(unknown), Walter Henderson, Shawn D. Burnham, W. Alan Doolittle	6
14	InN: A material with photovoltaic promise and challenges 2006 ·Journal of Crystal Growth ·(unknown), Gon Namkoong, Walter Henderson, Shawn D. Burnham, W. Alan Doolittle, Maurice C.-K. Cheung, Alexander N. Cartwright	73
15	III-nitride integration on ferroelectric materials of lithium niobate by molecular beam epitaxy 2005 ·Applied Physics Letters ·Gon Namkoong, (unknown), (unknown), Walter Henderson, Stephen E. Ralph, W. Alan Doolittle	34
16	Mg doped GaN using a valved, thermally energetic source: enhanced incorporation, and control 2005 ·Journal of Crystal Growth ·Shawn D. Burnham, Gon Namkoong, Walter Henderson, W. Alan Doolittle	15
17	Molecular beam epitaxy of complex metal-oxides: Where have we come, where are we going, and how are we going to get there? 2005 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·W. Alan Doolittle, (unknown), Walter Henderson	24
18	Growth of InN on Ge substrate by molecular beam epitaxy 2005 ·Journal of Crystal Growth ·(unknown), Gon Namkoong, Walter Henderson, W. Alan Doolittle, Rong Liu, (unknown), F. A. Ponce, Maurice C.-K. Cheung, Fei Chen, Madalina Furis, Alexander N. Cartwright	12
19	Mg Doped GaN Using a Valved, Thermally Energetic Source: Enhanced Incorporation, Control and Quantitative Optimization 2003 ·MRS Proceedings ·Shawn D. Burnham, W. Alan Doolittle, Gon Namkoong, Walter Henderson	5
20	Variation in the activities of enzymes associated with cell wall metabolism during a growth cycle ofCandida albicans 1982 ·FEMS Microbiology Letters ·Keith Barrett‐Bee, John A. Lees, Walter Henderson	10

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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