John F. Conley

4.2k total citations
144 papers, 3.4k citations indexed

About

John F. Conley is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, John F. Conley has authored 144 papers receiving a total of 3.4k indexed citations (citations by other indexed papers that have themselves been cited), including 126 papers in Electrical and Electronic Engineering, 74 papers in Materials Chemistry and 18 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in John F. Conley's work include Semiconductor materials and devices (99 papers), Electronic and Structural Properties of Oxides (34 papers) and Advancements in Semiconductor Devices and Circuit Design (31 papers). John F. Conley is often cited by papers focused on Semiconductor materials and devices (99 papers), Electronic and Structural Properties of Oxides (34 papers) and Advancements in Semiconductor Devices and Circuit Design (31 papers). John F. Conley collaborates with scholars based in United States, Egypt and Greece. John F. Conley's co-authors include Patrick M. Lenahan, P. M. Lenahan, Y. Ono, Nasir Alimardani, Raj Solanki, D. J. Tweet, Patrick M. Lenahan, Lisa Stecker, John F. Wager and P. Roitman and has published in prestigious journals such as Journal of the American Chemical Society, Advanced Materials and Nature Communications.

In The Last Decade

John F. Conley

134 papers receiving 3.3k citations

Peers

John F. Conley
Claudia Wiemer Italy
W. K. Chim Singapore
Yasushiro Nishioka Japan
Hideki Takagi Japan
A. Fejfar Czechia
Yan‐Kuin Su Taiwan
Hoyoul Kong South Korea
M. J. M. Gomes Portugal
G. Tallarida Italy
X. Portier France
Claudia Wiemer Italy
John F. Conley
Citations per year, relative to John F. Conley John F. Conley (= 1×) peers Claudia Wiemer

Countries citing papers authored by John F. Conley

Since Specialization
Citations

This map shows the geographic impact of John F. Conley's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by John F. Conley with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites John F. Conley more than expected).

Fields of papers citing papers by John F. Conley

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by John F. Conley. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by John F. Conley. The network helps show where John F. Conley may publish in the future.

Co-authorship network of co-authors of John F. Conley

This figure shows the co-authorship network connecting the top 25 collaborators of John F. Conley. A scholar is included among the top collaborators of John F. Conley based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with John F. Conley. John F. Conley is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kupp, Benjamin, et al.. (2024). Sub-volt high-speed silicon MOSCAP microring modulator driven by high-mobility conductive oxide. Nature Communications. 15(1). 826–826. 17 indexed citations
2.
Mimura, Takanori, et al.. (2024). Internal Photoemission Spectroscopy Measurements of Interfacial Energy Barriers in Operating TaN/Hf0.5Zr0.5O2/TaN Metal/Ferroelectric/Metal (MFM) Devices. ACS Applied Electronic Materials. 6(5). 3249–3256. 1 indexed citations
3.
Jaszewski, Samantha T., S. Habermehl, Giovanni Esteves, et al.. (2024). Nonvolatile memory cells from hafnium zirconium oxide ferroelectric tunnel junctions using Nb and NbN electrodes. Journal of Applied Physics. 135(9). 3 indexed citations
4.
Kupp, Benjamin, et al.. (2023). On-chip wavelength division multiplexing filters using extremely efficient gate-driven silicon microring resonator array. Scientific Reports. 13(1). 5269–5269. 13 indexed citations
5.
Hayes, M.H.B., et al.. (2021). Improved properties of atomic layer deposited ruthenium via postdeposition annealing. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 39(5). 8 indexed citations
6.
Price, David, et al.. (2018). Correction to Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero Oxidation State Precursor. Chemistry of Materials. 30(24). 8983–8984. 6 indexed citations
7.
Du, Xiaosong, David J. Matthews, Xuebin Tan, et al.. (2015). Fabrication of a Flexible Amperometric Glucose Sensor Using Additive Processes. ECS Journal of Solid State Science and Technology. 4(4). P3069–P3074. 26 indexed citations
8.
Smith, Sean W., et al.. (2013). Amorphous alumina nanowire array efficiently delivers Ac-DEVD-CHO to inhibit apoptosis of dendritic cells. Chemical Communications. 50(10). 1234–1237. 8 indexed citations
9.
Conley, John F.. (2012). Can the iPad Address the Needs of Students with Cognitive Impairments by Meeting IEP Goals. Society for Information Technology & Teacher Education International Conference. 2012(1). 3986–3990. 5 indexed citations
10.
Conley, John F., et al.. (2011). Impact of Parylene-A Encapsulation on ZnO Nanobridge Sensors and Sensitivity Enhancement via Continuous Ultraviolet Illumination. Journal of Electronic Materials. 41(5). 873–880. 1 indexed citations
11.
Alimardani, Nasir, et al.. (2010). Advancing MIM Electronics: Amorphous Metal Electrodes. Advanced Materials. 23(1). 74–78. 102 indexed citations
12.
Alimardani, Nasir, John F. Conley, John F. Wager, et al.. (2010). Stability and bias stressing of metal/insulator/metal diodes. xx. 80–84. 4 indexed citations
13.
Conley, John F., et al.. (2010). Bias stress stability of zinc-tin-oxide thin-film transistors with Al2O3 gate dielectrics. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 28(4). C5I1–C5I6. 31 indexed citations
14.
Conley, John F., et al.. (2002). Atomic layer deposition of thin hafnium oxide films using a carbon free precursor. Journal of Applied Physics. 93(1). 712–718. 79 indexed citations
15.
Lenahan, P. M., et al.. (2002). Electron spin resonance study of interface defects in atomic layer deposited hafnium oxide on Si. Applied Physics Letters. 81(6). 1128–1130. 40 indexed citations
16.
Suehle, John S., Eric M. Vogel, P. Roitman, et al.. (2002). Observation of latent reliability degradation in ultrathin oxides after heavy-ion irradiation. Applied Physics Letters. 80(7). 1282–1284. 41 indexed citations
17.
Conley, John F., et al.. (1996). Physically based predictive model of oxide charging. 134–141. 1 indexed citations
18.
Conley, John F., Patrick M. Lenahan, Aivars J. Lelis, & Timothy R. Oldham. (1995). Electron spin resonance evidence that E'/sub /spl gamma// centers can behave as switching oxide traps. IEEE Transactions on Nuclear Science. 42(6). 1744–1749. 77 indexed citations
19.
20.
Conley, John F., P. M. Lenahan, & P. Roitman. (1992). Evidence for Structural Change and a Deep Electron Trap in Separation by Implanted Oxygen Oxides. IEEE Transactions on Nuclear Science. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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