D. J. Tweet

1.8k total citations · 1 hit paper
47 papers, 1.5k citations indexed

About

D. J. Tweet is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, D. J. Tweet has authored 47 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 37 papers in Electrical and Electronic Engineering, 19 papers in Materials Chemistry and 18 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in D. J. Tweet's work include Semiconductor materials and devices (20 papers), Semiconductor materials and interfaces (11 papers) and Electronic and Structural Properties of Oxides (8 papers). D. J. Tweet is often cited by papers focused on Semiconductor materials and devices (20 papers), Semiconductor materials and interfaces (11 papers) and Electronic and Structural Properties of Oxides (8 papers). D. J. Tweet collaborates with scholars based in United States, Japan and Poland. D. J. Tweet's co-authors include Ian Robinson, L. B. Sorensen, John F. Conley, Brian D. Swanson, Hans Stragier, Robert Hołyst, Y. Ono, Raj Solanki, Arturo Gerardo Valdivia‐Flores and Yanjun Ma and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

D. J. Tweet

46 papers receiving 1.5k citations

Hit Papers

Surface X-ray diffraction 1992 2026 2003 2014 1992 200 400 600

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D. J. Tweet United States 15 780 636 528 376 179 47 1.5k
N. C. Halder United States 19 1.1k 1.4× 710 1.1× 492 0.9× 199 0.5× 196 1.1× 139 1.7k
Woei Wu Pai Taiwan 23 1.3k 1.7× 659 1.0× 774 1.5× 264 0.7× 198 1.1× 65 1.9k
C. Quirós Spain 20 915 1.2× 307 0.5× 606 1.1× 224 0.6× 153 0.9× 86 1.5k
B. Koslowski Germany 19 806 1.0× 432 0.7× 552 1.0× 231 0.6× 57 0.3× 50 1.4k
S. L. Qiu United States 21 686 0.9× 238 0.4× 419 0.8× 368 1.0× 379 2.1× 75 1.4k
J. Giber Hungary 18 701 0.9× 498 0.8× 595 1.1× 296 0.8× 122 0.7× 69 1.5k
M. W. Ruckman United States 23 594 0.8× 524 0.8× 926 1.8× 249 0.7× 348 1.9× 96 1.7k
K. Fauth Germany 23 902 1.2× 252 0.4× 880 1.7× 477 1.3× 353 2.0× 58 1.6k
N. D. Shinn United States 18 592 0.8× 532 0.8× 434 0.8× 241 0.6× 345 1.9× 43 1.4k
Akitaka Yoshigoe Japan 23 1.1k 1.3× 1.1k 1.8× 365 0.7× 401 1.1× 392 2.2× 179 2.0k

Countries citing papers authored by D. J. Tweet

Since Specialization
Citations

This map shows the geographic impact of D. J. Tweet's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. J. Tweet with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. J. Tweet more than expected).

Fields of papers citing papers by D. J. Tweet

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. J. Tweet. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. J. Tweet. The network helps show where D. J. Tweet may publish in the future.

Co-authorship network of co-authors of D. J. Tweet

This figure shows the co-authorship network connecting the top 25 collaborators of D. J. Tweet. A scholar is included among the top collaborators of D. J. Tweet based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. J. Tweet. D. J. Tweet is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Browning, Robert, et al.. (2015). Atomic layer deposition of MoS2 thin films. Materials Research Express. 2(3). 35006–35006. 67 indexed citations
2.
Tweet, D. J., et al.. (2005). Mobility enhancement of SSOI devices fabricated with sacrificial thin relaxed SiGe. 765. 139–140. 1 indexed citations
4.
Conley, John F., Y. Ono, D. J. Tweet, & Raj Solanki. (2004). Pulsed deposition of metal–oxide thin films using dual metal precursors. Applied Physics Letters. 84(3). 398–400. 14 indexed citations
6.
Tweet, D. J., et al.. (2003). Relaxation of SiGe Films for the Fabrication of Strained Si Devices. MRS Proceedings. 765. 3 indexed citations
7.
Tweet, D. J., et al.. (2003). Relaxation of SiGe Films for the Fabrication of Strained Si Devices. MRS Proceedings. 768. 1 indexed citations
8.
Conley, John F., et al.. (2002). Atomic layer deposition of thin hafnium oxide films using a carbon free precursor. Journal of Applied Physics. 93(1). 712–718. 79 indexed citations
9.
Conley, John F., et al.. (2002). Atomic Layer Deposition of Hafnium Oxide Using Anhydrous Hafnium Nitrate. Electrochemical and Solid-State Letters. 5(5). C57–C57. 35 indexed citations
10.
Carroll, Malcolm S., James C. Sturm, E. Napolitani, et al.. (2001). Silicon Interstitial Driven Loss of Substitutional Carbon from SiGeC Structures. MRS Proceedings. 669. 1 indexed citations
11.
Tweet, D. J., et al.. (1998). Thermal stability and structural evolution of low-K Fluorinated amorphous carbon during thermal annealing. MRS Proceedings. 511. 7 indexed citations
12.
Tweet, D. J. & Koichi Akimoto. (1996). Increased thermal stability due to addition of Ge in B/Si(111) heterostructures. Physica B Condensed Matter. 221(1-4). 218–225. 3 indexed citations
13.
Tweet, D. J., Hirofumi Matsuhata, R. Shioda, H. Ōyanagi, & H. Kamei. (1996). Strain Effects on Interdiffusion in InAs 1-xPx/InP Heterostructures. Japanese Journal of Applied Physics. 35(4R). 2025–2025. 4 indexed citations
14.
Fons, Paul, Shigeru Niki, A. Yamada, Akira Okada, & D. J. Tweet. (1995). Strain-Induced Diffusion in Heteroepitaxially Grown CuInSe2 on GaAs Substrates. MRS Proceedings. 399. 3 indexed citations
15.
Tweet, D. J., Hirofumi Matsuhata, R. Shioda, H. Ōyanagi, & H. Kamei. (1995). Island growth, strain, and interdiffusion in InAs1−xPx/InP heterostructures. Applied Physics Letters. 67(9). 1286–1288. 8 indexed citations
16.
Tweet, D. J., et al.. (1994). Factors determining the composition of strained GeSi layers grown with disilane and germane. Applied Physics Letters. 65(20). 2579–2581. 13 indexed citations
17.
Tweet, D. J. & Koichi Akimoto. (1994). SOLVING AN INTERFACIAL STRUCTURE WITH MULTIPLE WAVELENGTH ANOMALOUS DISPERSION (MAD). Modern Physics Letters B. 8(12). 721–737. 1 indexed citations
18.
Tweet, D. J., K. Akimoto, T. Tatsumi, et al.. (1992). Direct observation of Ge and Si ordering at the Si/B/GexSi1x(111) interface by anomalous x-ray diffraction. Physical Review Letters. 69(15). 2236–2239. 12 indexed citations
19.
Woicik, J. C., C. E. Bouldin, M. I. Bell, et al.. (1991). Conservation of bond lengths in strained Ge-Si layers. Physical review. B, Condensed matter. 43(3). 2419–2422. 52 indexed citations
20.
Swanson, Brian D., Hans Stragier, D. J. Tweet, & L. B. Sorensen. (1989). Layer-by-Layer Surface Freezing of Freely Suspended Liquid-Crystal Films. Physical Review Letters. 62(8). 909–912. 93 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Rankless by CCL
2026