Ruijing Ge

2.5k citations

22 papers · 1.5k indexed · 1 hit paper · h-index 13

Impact in

Electrical and Electronic Engineering top 5%
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Perovskite Materials and Applications
Materials Chemistry top 5%
- 2D Materials and Applications
- MXene and MAX Phase Materials
- Graphene research and applications

Papers in

Fuel Technology 1
Materials Chemistry 17
- 2D Materials and Applications 15
- MXene and MAX Phase Materials 5

Co-authors: Deji Akinwande Jack C. Lee Xiaohan Wu Myungsoo Kim Yanfeng Zhang Jianping Shi Li Tao Sushant Sonde
Journals: Advanced Materials (2 papers)Applied Surface Science (1 paper)RSC Advances (1 paper)Nature Communications (1 paper)npj 2D Materials and Applications (1 paper)
Partner nations: United States China Taiwan

In The Last Decade

Ruijing Ge

21 papers receiving 1.5k citations

Hit Papers

align trajectories log scale

Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides 2017 · 460 citations

Peers

Countries citing papers authored by Ruijing Ge

Since Specialization

Citations

This map shows the geographic impact of Ruijing Ge's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ruijing Ge with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ruijing Ge more than expected).

Fields of papers citing papers by Ruijing Ge

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ruijing Ge. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ruijing Ge. The network helps show where Ruijing Ge may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Ruijing Ge, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Ruijing Ge Line = papers co-authored together Ruijing Ge links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Solution loss behavior of cokes and its kinetics under hydrogen-enriched atmosphere Journal of Fuel Chemistry and Technology ·Jingchong Yan, Kwan‐Liu Ma, Ruijing Ge, Zhiping Lei, Zhan‐Ku Li, Weidong Zhang, Shibiao Ren, Zhicai Wang, Hengfu Shui	2025	0
2	Signatures of bright-to-dark exciton conversion in corrugated MoS2 monolayers Applied Surface Science ·M. Wiesner, DianYuniar Syanti Rahayu, Ruijing Ge, Lukas Mennel, Thomas Mueller, Jung‐Fu Lin, Deji Akinwande, Jacek Jenczyk	2022	6
3	Universal Non-Volatile Resistive Switching Behavior in 2D Metal Dichalcogenides Featuring Unique Conductive-Point Random Access Memory Effect arXiv (Cornell University) ·Xiaohan Wu, Ruijing Ge, Yuqian Gu, Emmanuel Okogbue, Jianping Shi, Abhay Shivayogimath, Peter Bøggild, Timothy J. Booth, Yanfeng Zhang, Yeonwoong Jung, Jack C. Lee, Deji Akinwande	2021	3
4	ReSe2-Based RRAM and Circuit-Level Model for Neuromorphic Computing Frontiers in Nanotechnology ·Yifu Huang, Yuqian Gu, Xiaohan Wu, Ruijing Ge, Yao‐Feng Chang, Xiyu Wang, Jia‐Han Zhang, Deji Akinwande, Jack C. Lee	2021	16
5	2D RRAM and Verilog-A model for Neuromorphic Computing Yifu Huang, Xiaohan Wu, Yuqian Gu, Ruijing Ge, Jia‐Han Zhang, Yao‐Feng Chang, Deji Akinwande, Jack C. Lee	2021	2
6	On the stochastic nature of conductive points formation and their effects on reliability of MoS2 RRAM: Experimental characterization and Monte Carlo simulation Microelectronics Reliability ·Yifu Huang, Xiaohan Wu, Yuqian Gu, Ruijing Ge, Deji Akinwande, Jack C. Lee	2021	4
7	Understanding of multiple resistance states by current sweeping in MoS ₂ -based non-volatile memory devices Nanotechnology ·Xiaohan Wu, Ruijing Ge, Deji Akinwande, Jack C. Lee	2020	27
8	Resistance state evolution under constant electric stress on a MoS₂ non-volatile resistive switching device RSC Advances ·Xiaohan Wu, Ruijing Ge, Yifu Huang, Deji Akinwande, Jack C. Lee	2020	13
9	Observation of single-defect memristor in an MoS2 atomic sheet Nature Nanotechnology ·Saban M. Hus, Ruijing Ge, Po-An Chen, Liangbo Liang, Gavin Donnelly, Wonhee Ko, Fumin Huang, Meng‐Hsueh Chiang, An‐Ping Li, Deji Akinwande	2020	236
10	Analogue switches made from boron nitride monolayers for application in 5G and terahertz communication systems Nature Electronics ·Myungsoo Kim, Emiliano Pallecchi, Ruijing Ge, Xiaohan Wu, Guillaume Ducournau, Jack C. Lee, H. Happy, Deji Akinwande	2020	106
11	Understanding of Multiple Resistance States by Current-sweep Measurement and Compliance Current Modulation in 2D MoS₂-based Non-volatile Resistance Switching Devices Xiaohan Wu, Ruijing Ge, Deji Akinwande, Jack C. Lee	2020	1
12	A Library of Atomically Thin 2D Materials Featuring the Conductive‐Point Resistive Switching Phenomenon Advanced Materials ·Ruijing Ge, Xiaohan Wu, Liangbo Liang, Saban M. Hus, Yuqian Gu, Emmanuel Okogbue, Harry Chou, Jianping Shi, Yanfeng Zhang, Sanjay K. Banerjee, Yeonwoong Jung, Jack C. Lee, Deji Akinwande	2020	116
13	Atomristors: Non-Volatile Resistance Switching in 2D Monolayers Scholarworks@UNIST (Ulsan National Institute of Science and Technology) ·Xiaohan Wu, Ruijing Ge, Myung Soo Kim, Deji Akinwande, Jack C. Lee	2020	6
14	Non-volatile RF and mm-wave Switches Based on Monolayer hBN HAL (Le Centre pour la Communication Scientifique Directe) ·Myungsoo Kim, Emiliano Pallecchi, Ruijing Ge, Xiaohan Wu, Maurice Hakim Slaoui, Étienne Okada, Jack C. Lee, H. Happy, Deji Akinwande	2019	15
15	Thinnest Nonvolatile Memory Based on Monolayer h‐BN Advanced Materials ·Xiaohan Wu, Ruijing Ge, Po‐An Chen, Harry Chou, Zhepeng Zhang, Yanfeng Zhang, Sanjay K. Banerjee, Meng‐Hsueh Chiang, Jack C. Lee, Deji Akinwande	2019	235
16	Zero-static power radio-frequency switches based on MoS2 atomristors Nature Communications ·Myungsoo Kim, Ruijing Ge, Xiaohan Wu, Xing Lan, Jesse Tice, Jack C. Lee, Deji Akinwande	2018	168
17	Atomristors: Memory Effect in Atomically-thin Sheets and Record RF Switches Scholarworks@UNIST (Ulsan National Institute of Science and Technology) ·Ruijing Ge, Xiaohan Wu, Myungsoo Kim, Po‐An Chen, Jianping Shi, Junho Choi, Xiaoqin Li, Yanfeng Zhang, Meng‐Hsueh Chiang, Jack C. Lee, Deji Akinwande	2018	17
18	An RRAM with a 2D Material Embedded Double Switching Layer for Neuromorphic Computing Po‐An Chen, Ruijing Ge, Jia‐Wei Lee, Hans Walter-Rix, Wei-Chou Hsu, Deji Akinwande, Meng‐Hsueh Chiang	2018	6
19	Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides Nano Letters ·Ruijing Ge, Xiaohan Wu, Myungsoo Kim, Jianping Shi, Sushant Sonde, Li Tao, Yanfeng Zhang, Jack C. Lee, Deji Akinwande Hit paper breakdown →	2017	460
20	Electrodeposition of porous graphene networks on nickel foams as supercapacitor electrodes with high capacitance and remarkable cyclic stability Nanoscale Research Letters ·Shaolin Yang, G. A. Matthews, Ruijing Ge, Li Zhang, Hong Wang, Zihan Zhang, Wei Zhu, Guanzhong Wang	2014	42

About Ruijing Ge

Ruijing Ge is a scholar working on Fuel Technology, Materials Chemistry, Electrical and Electronic Engineering, Polymers and Plastics and Cellular and Molecular Neuroscience, having authored 22 papers that have together received 1.5k indexed citations. Recurring topics across this work include Advanced Memory and Neural Computing (18 papers), 2D Materials and Applications (15 papers), Perovskite Materials and Applications (7 papers), Ferroelectric and Negative Capacitance Devices (6 papers), MXene and MAX Phase Materials (5 papers), Thin-Film Transistor Technologies (1 paper), Neural dynamics and brain function (1 paper) and Conducting polymers and applications (1 paper). The work is most often cited by research in Electrical and Electronic Engineering (1.3k citations), Materials Chemistry (875 citations), Polymers and Plastics (216 citations), Cellular and Molecular Neuroscience (230 citations) and Electronic, Optical and Magnetic Materials (83 citations). Ruijing Ge has collaborated with scholars based in United States, China and Taiwan. Frequent co-authors include Deji Akinwande, Jack C. Lee, Xiaohan Wu, Myungsoo Kim, Yanfeng Zhang, Jianping Shi, Li Tao, Sushant Sonde, Meng‐Hsueh Chiang and Saban M. Hus. Their work appears in journals such as Advanced Materials, Applied Surface Science, RSC Advances, Nature Communications and npj 2D Materials and Applications.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact