J. W. Shon

691 total citations
18 papers, 617 citations indexed

About

J. W. Shon is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Mechanics of Materials. According to data from OpenAlex, J. W. Shon has authored 18 papers receiving a total of 617 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 7 papers in Materials Chemistry and 6 papers in Mechanics of Materials. Recurrent topics in J. W. Shon's work include Plasma Diagnostics and Applications (13 papers), Semiconductor materials and devices (8 papers) and Metal and Thin Film Mechanics (6 papers). J. W. Shon is often cited by papers focused on Plasma Diagnostics and Applications (13 papers), Semiconductor materials and devices (8 papers) and Metal and Thin Film Mechanics (6 papers). J. W. Shon collaborates with scholars based in South Korea, United States and Ukraine. J. W. Shon's co-authors include Natalia Yu. Babaeva, О.V. Manuilenko, J. K. Lee, Nae‐Eung Lee, Peter G. Jones, Ellen Meeks, Jin Su Kim, Kim Js, Eric A. Hudson and Hyeong Joon Kim and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and Journal of Physics D Applied Physics.

In The Last Decade

J. W. Shon

18 papers receiving 574 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. W. Shon South Korea 10 586 258 130 114 112 18 617
Zhong-Ling Dai China 13 444 0.8× 207 0.8× 103 0.8× 86 0.8× 107 1.0× 41 480
Tsutomu Tsukada Japan 11 343 0.6× 174 0.7× 53 0.4× 126 1.1× 93 0.8× 34 398
Sergi Gomez United States 9 341 0.6× 121 0.5× 65 0.5× 96 0.8× 42 0.4× 9 387
T. W. Hamilton United States 11 379 0.6× 180 0.7× 48 0.4× 72 0.6× 41 0.4× 16 407
A. V. Vizir Russia 10 174 0.3× 224 0.9× 31 0.2× 125 1.1× 140 1.3× 62 327
Manabu Hamagaki Japan 13 332 0.6× 154 0.6× 27 0.2× 137 1.2× 79 0.7× 39 413
D. Carl United States 11 324 0.6× 98 0.4× 23 0.2× 114 1.0× 55 0.5× 17 365
M. Mišina Czechia 11 242 0.4× 309 1.2× 18 0.1× 236 2.1× 51 0.5× 23 430
Miyako Matsui Japan 12 530 0.9× 230 0.9× 34 0.3× 155 1.4× 19 0.2× 42 578
D.B. Radishev Russia 16 205 0.3× 315 1.2× 35 0.3× 500 4.4× 125 1.1× 44 581

Countries citing papers authored by J. W. Shon

Since Specialization
Citations

This map shows the geographic impact of J. W. Shon's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. W. Shon with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. W. Shon more than expected).

Fields of papers citing papers by J. W. Shon

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. W. Shon. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. W. Shon. The network helps show where J. W. Shon may publish in the future.

Co-authorship network of co-authors of J. W. Shon

This figure shows the co-authorship network connecting the top 25 collaborators of J. W. Shon. A scholar is included among the top collaborators of J. W. Shon based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. W. Shon. J. W. Shon is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

18 of 18 papers shown
1.
2.
Shon, J. W., et al.. (2010). Infinitely high etch selectivity during CH2F2/H2 dual-frequency capacitively coupled plasma etching of silicon nitride to chemical vapor-deposited a-C. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 28(4). 755–760. 5 indexed citations
3.
Lee, Nae‐Eung, et al.. (2010). Inductively coupled plasma etching of chemical-vapor-deposited amorphous carbon in N2/H2/Ar chemistries. Journal of the Korean Physical Society. 56(5). 1441–1445. 6 indexed citations
4.
5.
Kim, Jin Sung, et al.. (2009). Inductively Coupled Plasma Etching of Chemical-Vapor-Deposited Amorphous Carbon in N2/O2/Ar Chemistries. Japanese Journal of Applied Physics. 48(8). 08HD05–08HD05. 4 indexed citations
6.
Shon, J. W., et al.. (2009). Highly selective etching of silicon nitride to physical-vapor-deposited a-C mask in dual-frequency capacitively coupled CH2F2∕H2 plasmas. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 28(1). 65–68. 13 indexed citations
7.
Kwon, Deuk-Chul, et al.. (2008). A numerical study of the effect of gas injection position in an inductively coupled plasma discharge. Current Applied Physics. 9(2). 546–550. 5 indexed citations
8.
Lee, Sunghee, Sun‐Mi Choi, & J. W. Shon. (2007). Two-dimensional fluid simulation of VHF-ICP source with parallel resonance antenna. Computer Physics Communications. 177(1-2). 133–133. 1 indexed citations
9.
Heo, Jaeyeong, Hyeong Joon Kim, Jeonghoon Han, & J. W. Shon. (2006). The structures of low dielectric constant SiOC thin films prepared by direct and remote plasma enhanced chemical vapor deposition. Thin Solid Films. 515(12). 5035–5039. 20 indexed citations
10.
Babaeva, Natalia Yu., J. K. Lee, J. W. Shon, & Eric A. Hudson. (2005). Oxygen ion energy distribution: Role of ionization, resonant, and nonresonant charge-exchange collisions. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 23(4). 699–704. 27 indexed citations
11.
Babaeva, Natalia Yu., et al.. (2005). Capacitively coupled plasma source operating in Xe/Ar mixtures. Journal of Physics D Applied Physics. 38(2). 287–299. 21 indexed citations
12.
Lee, J. K., et al.. (2005). Ion energy distribution control in single and dual frequency capacitive plasma sources. Plasma Sources Science and Technology. 14(1). 89–97. 147 indexed citations
13.
Yang, Sung Soo, et al.. (2004). Two‐DimensionalKinetic and Three‐Dimensional Fluid‐Radiation Transport Simulations of Plasma Display Panel. Contributions to Plasma Physics. 44(5-6). 536–541. 8 indexed citations
14.
Babaeva, Natalia Yu., et al.. (2004). Simulation of Capacitively Coupled Single- and Dual-Frequency RF Discharges. IEEE Transactions on Plasma Science. 32(1). 47–53. 90 indexed citations
15.
Lee, J. K., et al.. (2004). Discharge asymmetry induced by the pulsed radio-frequency current. Applied Physics Letters. 84(6). 864–866. 7 indexed citations
16.
Shon, J. W., et al.. (2003). Analytic model for a dual frequency capacitive discharge. Physics of Plasmas. 10(11). 4545–4551. 119 indexed citations
17.
Kim, Jin Su, et al.. (2003). Sub-0.1 μm nitride hard mask open process without precuring the ArF photoresist. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 21(2). 790–794. 66 indexed citations
18.
Meeks, Ellen, et al.. (1995). Effects of atomic chlorine wall recombination: Comparison of a plasma chemistry model with experiment. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 13(6). 2884–2889. 39 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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