Tobias Wikström
About
In The Last Decade
Tobias Wikström
25 papers receiving 1.4k citations
Hit Papers
Peers
Comparison fields: 5 of 53
- Materials Chemistry 1.1k
- Electrical and Electronic Engineering 804
- Mechanics of Materials 418
- Geophysics 215
- Atomic and Molecular Physics, and Optics 209
Countries citing papers authored by Tobias Wikström
This map shows the geographic impact of Tobias Wikström's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tobias Wikström with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tobias Wikström more than expected).
Fields of papers citing papers by Tobias Wikström
This network shows the impact of papers produced by Tobias Wikström. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tobias Wikström. The network helps show where Tobias Wikström may publish in the future.
Co-authorship network of co-authors of Tobias Wikström
This figure shows the co-authorship network connecting the top 25 collaborators of Tobias Wikström. A scholar is included among the top collaborators of Tobias Wikström based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tobias Wikström. Tobias Wikström is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | 2 | |
| 2 | 2 | |
| 3 | 1 | |
| 4 | 5 | |
| 5 | 1 | |
| 6 | 5 | |
| 7 | 18 | |
| 8 | 38 | |
| 9 | 7 | |
| 10 | 11 | |
| 11 | 25 | |
| 12 | 12 | |
| 13 | Optimization of Parameters influencing the Maximum Controllable Current in Gate Commutated Thyristors | 2 |
| 14 | A tiny dot can change the world: High-Power Technology for IGCTs | 4 |
| 15 | 22 | |
| 16 | 12 | |
| 17 | 107 | |
| 18 | 8 | |
| 19 | High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond breakdown → | 1015 |
| 20 | Why is Plasma Engineering in Fast Recovery Diodes by Ion Irradiation superior to Emitter Efficiency Reduction | 1 |
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.