J. R. Waldrop

6.8k citations

75 papers · 5.6k indexed · 3 hit papers · h-index 34

Impact in

Atomic and Molecular Physics, and Optics top 1%
- Semiconductor materials and interfaces
- Semiconductor Quantum Structures and Devices
Surfaces, Coatings and Films top 1%

Papers in

Surfaces, Coatings and Films 16
- Electron and X-Ray Spectroscopy Techniques 16
Structural Biology 3

Co-authors: R. W. Grant E. A. Kraut S. P. Kowalczyk Daniel W. Engels Walter A. Harrison Sanjay E. Sarma M. Kendig Steven P. Kowalczyk
Journals: Applied Physics Letters (18 papers)Journal of Applied Physics (4 papers)Physical Review Letters (3 papers)IEEE Electron Device Letters (2 papers)Journal of The Electrochemical Society (2 papers)
Partner nations: United States Australia

In The Last Decade

J. R. Waldrop

74 papers receiving 5.3k citations

Hit Papers

align trajectories log scale

Semiconductor core-level to valence-band maximum binding-energy differences: Precise determination by x-ray photoelectron spectroscopy 1983 · 438 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

1983 Physical review. B, Condensed matter
1980 Physical Review Letters
1978 Physical review. B, Condensed matter

Peers

Countries citing papers authored by J. R. Waldrop

Since Specialization

Citations

This map shows the geographic impact of J. R. Waldrop's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. R. Waldrop with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. R. Waldrop more than expected).

Fields of papers citing papers by J. R. Waldrop

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. R. Waldrop. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. R. Waldrop. The network helps show where J. R. Waldrop may publish in the future.

Co-authors

The 25 scholars most cited alongside J. R. Waldrop, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. R. Waldrop Line = papers co-authored together J. R. Waldrop links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Compositional variations in MBE grown InAs-GaSb superlattices for infrared detector applications Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Gerard Sullivan, Amal Ikhlassi, J. Bergman, R. E. DeWames, J. R. Waldrop, C. H. Grein, Michael E. Flatté, K. Mahalingam, Hao Yang, Mianzeng Zhong, Michael Weimer	2005	1
2	Techniques for reliability analysis of MEMS RF switch J.F. DeNatale, R.E. Mihailovich, J. R. Waldrop	2003	23
3	Role of hexavalent chromium in the inhibition of corrosion of aluminum alloys Surface and Coatings Technology ·M. Kendig, S. Jeanjaquet, R. C. Addison, J. R. Waldrop	2001	203
4	Properties of La-Monazite as an Interphase in Oxide Composites International Journal of Materials Research (formerly Zeitschrift fuer Metallkunde) ·(unknown), (unknown), Paul Morgan, J. R. Waldrop, John R. Porter	1999	4
5	Measurement of AlN/GaN (0001) heterojunction band offsets by x-ray photoemission spectroscopy Applied Physics Letters ·J. R. Waldrop, R. W. Grant	1996	226
6	Determination of junction temperature in AlGaAs/GaAs heterojunction bipolar transistors by electrical measurement IEEE Transactions on Electron Devices ·J. R. Waldrop, K.C. Wang, P.M. Asbeck	1992	49
7	Measurement of InP/In0.53Ga0.47As and In0.53Ga0.47As/In0.52Al0.48As heterojunction band offsets by x-ray photoemission spectroscopy Journal of Applied Physics ·J. R. Waldrop, E. A. Kraut, C. W. Farley, R. W. Grant	1991	54
8	Measurement of AlAs/InP and InP/In0.52Al0.48As heterojunction band offsets by x-ray photoemission spectroscopy Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·J. R. Waldrop, E. A. Kraut, C. W. Farley, R. W. Grant	1990	21
9	Measurement of GaAs/InP and InAs/InP heterojunction band offsets by x-ray photoemission spectroscopy Applied Physics Letters ·J. R. Waldrop, R. W. Grant, E. A. Kraut	1989	49
10	GaAs/InP and InAs/InP heterojunction band offsets measured by x-ray photoemission spectroscopy Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·J. R. Waldrop, R. W. Grant, E. A. Kraut	1989	9
11	Metal contacts to p-type GaAs with large Schottky barrier heights Applied Physics Letters ·J. R. Waldrop	1988	13
12	Electrical properties of ideal metal contacts to GaAs: Schottky-barrier height Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·J. R. Waldrop	1984	116
13	Summary Abstract: Fermi-level pinning energy and chemistry at InP(100) interfaces Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·J. R. Waldrop, S. P. Kowalczyk, R. W. Grant	1983	2
14	Valence-band discontinuities for abrupt (110), (100), and (111) oriented Ge-GaAs heterojunctions Surface Science ·J. R. Waldrop, E. A. Kraut, S. P. Kowalczyk, R. W. Grant	1983	46
15	Refractory metal contacts to GaAs: Interface chemistry and Schottky-barrier formation Journal of Vacuum Science and Technology ·J. R. Waldrop, S. P. Kowalczyk, R. W. Grant	1982	33
16	Correlation of GaAs surface chemistry and interface Fermi-level position: A single defect model interpretation Journal of Vacuum Science and Technology ·R. W. Grant, J. R. Waldrop, S. P. Kowalczyk, E. A. Kraut	1981	75
17	Semiconductor Heterojunction Interfaces: Nontransitivity of Energy-band Discontiuities Physical Review Letters ·J. R. Waldrop, R. W. Grant	1979	77
18	Interface chemistry of metal-GaAs Schottky-barrier contacts Applied Physics Letters ·J. R. Waldrop, R. W. Grant	1979	160
19	Polar heterojunction interfaces Physical review. B, Condensed matter ·Walter A. Harrison, E. A. Kraut, J. R. Waldrop, R. W. Grant Hit paper breakdown →	1978	455
20	Depletion effects in semi−insulating GaAs Applied Physics Letters ·J. R. Waldrop, R. Zucca, Cheng P. Wen	1975	4

About J. R. Waldrop

J. R. Waldrop is a scholar working on Surfaces, Coatings and Films, Structural Biology, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics, having authored 75 papers that have together received 5.6k indexed citations. Recurring topics across this work include Semiconductor materials and interfaces (37 papers), Semiconductor Quantum Structures and Devices (32 papers), Semiconductor materials and devices (21 papers), Electron and X-Ray Spectroscopy Techniques (16 papers), Surface and Thin Film Phenomena (16 papers), Advanced Semiconductor Detectors and Materials (14 papers), Integrated Circuits and Semiconductor Failure Analysis (7 papers) and Corrosion Behavior and Inhibition (5 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (2.5k citations), Surfaces, Coatings and Films (495 citations), Electrical and Electronic Engineering (3.8k citations), Electronic, Optical and Magnetic Materials (1000 citations) and Condensed Matter Physics (616 citations). J. R. Waldrop has collaborated with scholars based in United States and Australia. Frequent co-authors include R. W. Grant, E. A. Kraut, S. P. Kowalczyk, Daniel W. Engels, Walter A. Harrison, Sanjay E. Sarma, S. P. Kowalczyk, M. Kendig, Steven P. Kowalczyk and R. C. Addison. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Physical Review Letters, IEEE Electron Device Letters and Journal of The Electrochemical Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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