A. Reklaǐtis

1.1k total citations
77 papers, 844 citations indexed

About

A. Reklaǐtis is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, A. Reklaǐtis has authored 77 papers receiving a total of 844 indexed citations (citations by other indexed papers that have themselves been cited), including 71 papers in Atomic and Molecular Physics, and Optics, 66 papers in Electrical and Electronic Engineering and 14 papers in Condensed Matter Physics. Recurrent topics in A. Reklaǐtis's work include Semiconductor Quantum Structures and Devices (64 papers), Advancements in Semiconductor Devices and Circuit Design (35 papers) and Semiconductor materials and devices (22 papers). A. Reklaǐtis is often cited by papers focused on Semiconductor Quantum Structures and Devices (64 papers), Advancements in Semiconductor Devices and Circuit Design (35 papers) and Semiconductor materials and devices (22 papers). A. Reklaǐtis collaborates with scholars based in Lithuania, Italy and Russia. A. Reklaǐtis's co-authors include J. Požėla, L. Reggiani, R. Mickevičius, A. Matulionis, V. Gruz̆inskis, V. Ya. Aleshkin, A. Krotkus, J. Mateos, D. Pardo and T. González and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

A. Reklaǐtis

74 papers receiving 754 citations

Peers

A. Reklaǐtis
V. Gruz̆inskis Lithuania
M.J. Mondry United States
T. M. Kerr United Kingdom
W.C.B. Peatman United States
G. Döhler Germany
E.A.H. Timmermans Netherlands
J. Požėla Lithuania
V. Gruz̆inskis Lithuania
A. Reklaǐtis
Citations per year, relative to A. Reklaǐtis A. Reklaǐtis (= 1×) peers V. Gruz̆inskis

Countries citing papers authored by A. Reklaǐtis

Since Specialization
Citations

This map shows the geographic impact of A. Reklaǐtis's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Reklaǐtis with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Reklaǐtis more than expected).

Fields of papers citing papers by A. Reklaǐtis

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Reklaǐtis. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Reklaǐtis. The network helps show where A. Reklaǐtis may publish in the future.

Co-authorship network of co-authors of A. Reklaǐtis

This figure shows the co-authorship network connecting the top 25 collaborators of A. Reklaǐtis. A scholar is included among the top collaborators of A. Reklaǐtis based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Reklaǐtis. A. Reklaǐtis is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Seliuta, D., Kȩstutis Ikamas, Alvydas Lisauskas, et al.. (2020). Symmetric bow-tie diode for terahertz detection based on transverse hot-carrier transport. Journal of Physics D Applied Physics. 53(27). 275106–275106. 4 indexed citations
2.
Valušis, Gintaras, Rimvydas Venckevičius, Linas Minkevičius, et al.. (2017). Compact solutions for spectroscopic solid-state-based terahertz imaging systems. 9585. 27–27. 1 indexed citations
3.
Reklaǐtis, A.. (2016). Oscillations of electron–hole plasma in terahertz emitters. Lithuanian Journal of Physics. 55(4).
4.
Reklaǐtis, A.. (2014). Theoretical analysis of conditions for observation of plasma oscillations in semiconductors from pulsed terahertz emission. Journal of Applied Physics. 116(8). 6 indexed citations
5.
Reklaǐtis, A.. (2010). Terahertz emission from InAs induced by photo-Dember effect: Hydrodynamic analysis and Monte Carlo simulations. Journal of Applied Physics. 108(5). 40 indexed citations
6.
Reklaǐtis, A.. (2008). Terahertz-frequency InN/GaN heterostructure-barrier varactor diodes. Journal of Physics Condensed Matter. 20(38). 384202–384202. 10 indexed citations
7.
Reklaǐtis, A.. (2006). Monte Carlo analysis of terahertz oscillations of photoexcited carriers in GaAspinstructures. Physical Review B. 74(16). 28 indexed citations
8.
Reklaǐtis, A. & L. Reggiani. (2004). Monte Carlo study of hot-carrier transport in bulk wurtzite GaN and modeling of a near-terahertz impact avalanche transit time diode. Journal of Applied Physics. 95(12). 7925–7935. 67 indexed citations
9.
Reklaǐtis, A. & L. Reggiani. (2004). Giant suppression of avalanche noise in GaN double-drift impact diodes. Solid-State Electronics. 49(3). 405–408. 3 indexed citations
10.
Reggiani, L., A. Reklaǐtis, T. González, et al.. (2000). Monte Carlo Investigation of Shot-noise Suppression in Nondegenerate Ballistic and Diffusive Transport Regimes. Australian Journal of Physics. 53(1). 3–34. 18 indexed citations
11.
Aleshkin, V. Ya., L. Reggiani, & A. Reklaǐtis. (2000). Sub- and super-Poissonian shot noise in single-barrier semiconductor structures. Semiconductor Science and Technology. 15(11). 1045–1048. 5 indexed citations
12.
Reklaǐtis, A. & L. Reggiani. (1999). Shot noise suppression from independently tunnelled electrons in heterostructures. Semiconductor Science and Technology. 14(2). L5–L10. 6 indexed citations
13.
Krotkus, A., et al.. (1998). Picosecond switching due to electron tunnellingand avalanche in GaAs/Al x Ga 1– x As diode. Electronics Letters. 34(14). 1434–1436.
14.
Mickevičius, R. & A. Reklaǐtis. (1989). Hot phonon effects on electron high-field transport in GaAs. Journal of Physics Condensed Matter. 1(47). 9401–9412. 13 indexed citations
15.
Gruz̆inskis, V., Skirmantas Keršulis, R. Mickevičius, J. Požėla, & A. Reklaǐtis. (1988). Hot Electrons in Double-barrier GaAs Transistors. Physica Scripta. T23. 232–234. 1 indexed citations
16.
Mickevičius, R., J. Požėla, & A. Reklaǐtis. (1983). Theoretical investigation of impact — ionized plasma instability in GaAs. 1–2.
17.
Reklaǐtis, A., et al.. (1983). Streaming plasma instability of photoexcited electrons in semiconductors. International Journal of Infrared and Millimeter Waves. 4(6). 859–875. 2 indexed citations
18.
Reklaǐtis, A.. (1981). Electron transport in semiconductors in the presence of impact ionization. Journal of Physics and Chemistry of Solids. 42(10). 891–896. 13 indexed citations
19.
Reklaǐtis, A., et al.. (1980). Dynamical response of electrons in GaAs in a high electric field. physica status solidi (a). 62(2). 399–405. 4 indexed citations
20.
Matulionis, A., J. Požėla, & A. Reklaǐtis. (1976). Monte Carlo calculations of hot-electron transient behaviour in CdTe and GaAs. physica status solidi (a). 35(1). 43–48. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Rankless by CCL
2026