J. Osvald

1.3k citations

65 papers · 1.1k indexed · h-index 17

Impact in

Atomic and Molecular Physics, and Optics top 2%
- Semiconductor materials and interfaces
- Semiconductor Quantum Structures and Devices
Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials

Papers in

Condensed Matter Physics 24
- GaN-based semiconductor devices and materials 24
Atomic and Molecular Physics, and Optics 48
- Semiconductor materials and interfaces 47
- Semiconductor Quantum Structures and Devices 12

Co-authors: Edmund Dobročka Zs. J. Horváth Bohumír Zaťko P. Lobotka Subhash Chand K. Hricovíni V. Yu. Aristov G. Le Lay
Journals: Applied Surface Science (7 papers)Journal of Applied Physics (7 papers)Semiconductor Science and Technology (5 papers)Solid-State Electronics (5 papers)Microelectronic Engineering (4 papers)
Partner nations: Slovakia Russia India

In The Last Decade

J. Osvald

65 papers receiving 1.1k citations

Peers

Countries citing papers authored by J. Osvald

Since Specialization

Citations

This map shows the geographic impact of J. Osvald's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Osvald with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Osvald more than expected).

Fields of papers citing papers by J. Osvald

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Osvald. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Osvald. The network helps show where J. Osvald may publish in the future.

Co-authors

The 25 scholars most cited alongside J. Osvald, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Osvald Line = papers co-authored together J. Osvald links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Simulation of Structure Parameters' Influence on the Threshold Voltage of Normally‐Off p‐GaN/AlGaN/GaN Transistors physica status solidi (a) ·J. Osvald	2019	1
2	Interface traps contribution to capacitance of Al2O3/(GaN)AlGaN/GaN heterostructures at low frequencies Physica E Low-dimensional Systems and Nanostructures ·J. Osvald	2017	7
3	Back‐to‐back connected asymmetric Schottky diodes with series resistance as a single diode physica status solidi (a) ·J. Osvald	2015	38
4	Extraction of interface trap density of Al₂O₃/AlGaN/GaN MIS heterostructure capacitance physica status solidi (b) ·J. Osvald, R. Stoklas, P. Kordoš	2014	9
5	Surface States Influence on Capacitance Properties of Dielectric/AlGaN/GaN Heterostructures Japanese Journal of Applied Physics ·J. Osvald	2013	2
6	Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation Applied Surface Science ·T. Lalinský, Susan Agustina, G. Vanko, Edmund Dobročka, Á. Vincze, J. Osvald, Lauce Noriyo de Moraes Nozaki, Zhaohui Ran	2013	8
7	Effect of Inverse Doped Surface Layer in Schottky Barrier Modification: A Numerical Study Journal of Electronic Materials ·Subhash Chand, 友紀園田, J. Osvald	2012	2
8	Influence of interface states on C-V characteristics of AlGaN/GaN heterostructures J. Osvald	2010	2
9	Effect of fluorine interface redistribution on performance of AlGaN/GaN HEMTs Microelectronic Engineering ·T. Lalinský, G. Vanko, Á. Vincze, Š. Haščı́k, J. Osvald, D. Donoval, Mingkun Yi, I. Kostič	2010	5
10	Simulation of Influence of AlGaN/GaN Heterojunction Parameters on Its Capacitance Curves J. Osvald	2008	1
11	Temperature dependence of GaN Schottky diodes I–V characteristics Microelectronic Engineering ·J. Osvald, J. Kuzmı́k, Г. Константинидис, P. Lobotka, A. Georgakilas	2005	46
12	Self-consistent analysis of Si δ-doped layer placed in a non-central position in GaAs structure Physica E Low-dimensional Systems and Nanostructures ·J. Osvald	2004	12
13	Self-consistent analysis of Si $delta;-doped layer placed in a non-central position in GaAs structure Physica E Low-dimensional Systems and Nanostructures ·J. Osvald	2004	1
14	Numerical study of barrier height enhancement in n‐In _0.35 Ga _0.65 As Schottky diodes using a p‐type near‐interface layer Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·J. Osvald	2003	3
15	Delta-doped layer influence on Schottky diodes parameters J. Osvald	2002	1
16	Numerical study of electrical transport in inhomogeneous Schottky diodes Journal of Applied Physics ·J. Osvald	1999	67
17	Pb/Si(111)1×1-H SCHOTTKY BARRIER HEIGHT University of Zagreb University Computing Centre (SRCE) ·J. Osvald, K. Hricovíni, G. Le Lay, Yu-Chang Kao	1995	1
18	Influence of barrier height distribution on the parameters of Schottky diodes Applied Physics Letters ·Edmund Dobročka, J. Osvald	1994	165
19	Cs-induced highest E F jump above InAs(110) conduction-band minimum Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·V. Yu. Aristov, G. Le Lay, P. Soukiassian, K. Hricovíni, Jacques Bonnet, J. Osvald, Avery Dougherty	1994	21
20	Alkali-Metal-Induced Highest Fermi-Level Pinning Position above Semiconductor Conduction Band Minimum Europhysics Letters (EPL) ·V. Yu. Aristov, G. Le Lay, P. Soukiassian, K. Hricovíni, Jacques Bonnet, J. Osvald, Avery Dougherty	1994	45

About J. Osvald

J. Osvald is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Surfaces, Coatings and Films, having authored 65 papers that have together received 1.1k indexed citations. Recurring topics across this work include Semiconductor materials and interfaces (47 papers), Semiconductor materials and devices (31 papers), GaN-based semiconductor devices and materials (24 papers), Integrated Circuits and Semiconductor Failure Analysis (16 papers), Silicon and Solar Cell Technologies (14 papers), Silicon Carbide Semiconductor Technologies (14 papers), Semiconductor Quantum Structures and Devices (12 papers) and Ga2O3 and related materials (7 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (907 citations), Condensed Matter Physics (209 citations), Electrical and Electronic Engineering (949 citations), Electronic, Optical and Magnetic Materials (95 citations) and Materials Chemistry (220 citations). J. Osvald has collaborated with scholars based in Slovakia, Russia and India. Frequent co-authors include Edmund Dobročka, Zs. J. Horváth, Bohumír Zaťko, P. Lobotka, Subhash Chand, K. Hricovíni, V. Yu. Aristov, G. Le Lay, Jacques Bonnet and P. Soukiassian. Their work appears in journals such as Applied Surface Science, Journal of Applied Physics, Semiconductor Science and Technology, Solid-State Electronics and Microelectronic Engineering.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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