J. Kolník

954 total citations
26 papers, 769 citations indexed

About

J. Kolník is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, J. Kolník has authored 26 papers receiving a total of 769 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 12 papers in Condensed Matter Physics and 11 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in J. Kolník's work include Semiconductor materials and devices (17 papers), GaN-based semiconductor devices and materials (12 papers) and Semiconductor Quantum Structures and Devices (7 papers). J. Kolník is often cited by papers focused on Semiconductor materials and devices (17 papers), GaN-based semiconductor devices and materials (12 papers) and Semiconductor Quantum Structures and Devices (7 papers). J. Kolník collaborates with scholars based in United States and Slovakia. J. Kolník's co-authors include İsmail H. Oğuzman, Kevin F. Brennan, P. P. Ruden, Rongping Wang, Yang Wang, E. Bellotti, R. Wang, Yang Wang, J. Ivančo and P.R. Mukund and has published in prestigious journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices and Journal of Physics and Chemistry of Solids.

In The Last Decade

J. Kolník

25 papers receiving 724 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Kolník United States 9 592 549 378 223 103 26 769
İsmail H. Oğuzman United States 10 590 1.0× 525 1.0× 345 0.9× 219 1.0× 99 1.0× 19 743
T. Li United States 10 386 0.7× 260 0.5× 198 0.5× 236 1.1× 61 0.6× 12 524
Torben R. Fortune United States 14 263 0.4× 387 0.7× 169 0.4× 214 1.0× 133 1.3× 26 521
G. Tränkle Germany 16 188 0.3× 570 1.0× 412 1.1× 48 0.2× 51 0.5× 65 684
G. Muzioł Poland 17 703 1.2× 339 0.6× 484 1.3× 184 0.8× 198 1.9× 83 786
J. Liberis United States 19 708 1.2× 563 1.0× 540 1.4× 253 1.1× 295 2.9× 73 976
Bongim Jun United States 14 227 0.4× 459 0.8× 61 0.2× 169 0.8× 74 0.7× 22 567
Krzesimir Nowakowski-Szkudlarek Poland 12 283 0.5× 196 0.4× 203 0.5× 79 0.4× 77 0.7× 40 351
Marco Vallone Italy 13 213 0.4× 427 0.8× 249 0.7× 57 0.3× 94 0.9× 59 545
P. J. Willadsen United States 18 870 1.5× 899 1.6× 240 0.6× 315 1.4× 83 0.8× 30 1.0k

Countries citing papers authored by J. Kolník

Since Specialization
Citations

This map shows the geographic impact of J. Kolník's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Kolník with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Kolník more than expected).

Fields of papers citing papers by J. Kolník

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Kolník. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Kolník. The network helps show where J. Kolník may publish in the future.

Co-authorship network of co-authors of J. Kolník

This figure shows the co-authorship network connecting the top 25 collaborators of J. Kolník. A scholar is included among the top collaborators of J. Kolník based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Kolník. J. Kolník is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Mukund, P.R., et al.. (2006). A Universal Common-Source and Common-Drain Model for 1-20GHz Frequency Range. 3313–3316. 2 indexed citations
2.
Mukund, P.R., et al.. (2006). Universal MOSFET gate impedance model for 200MHz–20GHz frequency range. Solid-State Electronics. 50(7-8). 1450–1460. 3 indexed citations
3.
Mukund, P.R., et al.. (2005). Effects of technology and dimensional scaling on input loss prediction of RF MOSFETs. 295–300. 6 indexed citations
4.
Bellotti, E., et al.. (1997). Comparison of Electron and Hole Initiated Impact Ionization in Zincblende and Wurtzite Phase Gallium Nitride. MRS Proceedings. 468. 8 indexed citations
5.
Yun, Ilgu, Yang Wang, İsmail H. Oğuzman, et al.. (1997). Effect of doping on the reliability of GaAs multiple quantum well avalanche photodiodes. IEEE Transactions on Electron Devices. 44(4). 535–544. 6 indexed citations
6.
Kolník, J., İsmail H. Oğuzman, Kevin F. Brennan, Rongping Wang, & P. P. Ruden. (1997). Monte Carlo calculation of electron initiated impact ionization in bulk zinc-blende and wurtzite GaN. Journal of Applied Physics. 81(2). 726–733. 95 indexed citations
7.
Oğuzman, İsmail H., E. Bellotti, Kevin F. Brennan, et al.. (1997). Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN. Journal of Applied Physics. 81(12). 7827–7834. 156 indexed citations
8.
Kolník, J., İsmail H. Oğuzman, Kevin F. Brennan, R. Wang, & P. P. Ruden. (1996). Theoretical Prediction of Zinc Blende Phase GaN Avalanche Photodiode Performance Based on Numerically Calculated Electron and Hole Impact Ionization Rate Ratio. MRS Proceedings. 423. 5 indexed citations
9.
Kolník, J., et al.. (1996). Calculation of the wave-vector-dependent interband impact-ionization transition rate in wurtzite and zinc-blende phases of bulk GaN. Journal of Applied Physics. 79(11). 8838–8840. 34 indexed citations
10.
Oğuzman, İsmail H., et al.. (1996). Hole transport properties of bulk zinc-blende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure. Journal of Applied Physics. 80(8). 4429–4436. 55 indexed citations
11.
Yun, Ilgu, Yang Wang, İsmail H. Oğuzman, et al.. (1995). Reliability Assessment of Multiple Quantum Well Avalanche Photodiodes. NASA STI Repository (National Aeronautics and Space Administration). 200–204. 2 indexed citations
12.
Oğuzman, İsmail H., Yang Wang, J. Kolník, & Kevin F. Brennan. (1995). Theoretical study of hole initiated impact ionization in bulk silicon and GaAs using a wave-vector-dependent numerical transition rate formulation within an ensemble Monte Carlo calculation. Journal of Applied Physics. 77(1). 225–232. 23 indexed citations
13.
Oğuzman, İsmail H., Yang Wang, J. Kolník, & Kevin F. Brennan. (1995). Ensemble Monte Carlo calculation of the hole initiated impact ionization rate in bulk GaAs and silicon using a k-dependent, numerical transition rate formulation. NASA Technical Reports Server (NASA). 1 indexed citations
14.
Oğuzman, İsmail H., J. Kolník, Kevin F. Brennan, R. Wang, & P. P. Ruden. (1995). Monte Carlo Calculation of Hole Transport in Bulk Zincblende Phase of GaN including a Pseudopotential Calculated Band Structure. MRS Proceedings. 395. 2 indexed citations
15.
Wang, R., P. P. Ruden, J. Kolník, İsmail H. Oğuzman, & Kevin F. Brennan. (1995). Dielectric Functions of Wurtzite and Zincblende Structure GaN. MRS Proceedings. 395. 6 indexed citations
16.
Kolník, J., İsmail H. Oğuzman, Kevin F. Brennan, et al.. (1995). Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure. Journal of Applied Physics. 78(2). 1033–1038. 264 indexed citations
17.
Kolník, J., Yang Wang, İsmail H. Oğuzman, & Kevin F. Brennan. (1994). Theoretical investigation of wave-vector-dependent analytical and numerical formulations of the interband impact-ionization transition rate for electrons in bulk silicon and GaAs. Journal of Applied Physics. 76(6). 3542–3551. 17 indexed citations
19.
Kolník, J., et al.. (1992). Metal/thin insulator/silicon schottky diodes with plasma deposited silicon nitride interfacial layer. physica status solidi (a). 130(1). 245–251. 6 indexed citations
20.
Kolník, J., et al.. (1990). The Influence of Inversion Surface Layers on the Evaluation of the Interface State Energy Distribution from Schottky-DiodeI–U Characteristics. physica status solidi (a). 122(2). 583–588. 17 indexed citations

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