J. Hewett

554 total citations
15 papers, 436 citations indexed

About

J. Hewett is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J. Hewett has authored 15 papers receiving a total of 436 indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Electrical and Electronic Engineering, 10 papers in Atomic and Molecular Physics, and Optics and 5 papers in Materials Chemistry. Recurrent topics in J. Hewett's work include Semiconductor Quantum Structures and Devices (6 papers), Thin-Film Transistor Technologies (5 papers) and Advancements in Semiconductor Devices and Circuit Design (5 papers). J. Hewett is often cited by papers focused on Semiconductor Quantum Structures and Devices (6 papers), Thin-Film Transistor Technologies (5 papers) and Advancements in Semiconductor Devices and Circuit Design (5 papers). J. Hewett collaborates with scholars based in United Kingdom and Finland. J. Hewett's co-authors include J. J. Harris, C. T. Foxon, David Hilton, Christine Cardinal Roberts, M. J. Powell, I. D. French, S. C. Deane, I. G. Gale, Ralf B. Wehrspohn and John Robertson and has published in prestigious journals such as Journal of Applied Physics, Surface Science and Applied Physics A.

In The Last Decade

J. Hewett

15 papers receiving 416 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. Hewett United Kingdom	10	349	220	144	47	27	15	436
K. Seo South Korea	13	346 1.0×	190 0.9×	47 0.3×	73 1.6×	67 2.5×	36	410
Laurent Ottaviani France	12	400 1.1×	87 0.4×	125 0.9×	19 0.4×	18 0.7×	82	484
Masayasu Nishizawa Japan	10	381 1.1×	184 0.8×	199 1.4×	24 0.5×	51 1.9×	30	467
Nikolaj Zangenberg Denmark	10	463 1.3×	296 1.3×	164 1.1×	38 0.8×	89 3.3×	23	543
W.B. de Boer Netherlands	15	604 1.7×	250 1.1×	181 1.3×	14 0.3×	76 2.8×	37	677
V. E. Chelnokov Russia	13	531 1.5×	171 0.8×	164 1.1×	32 0.7×	33 1.2×	47	627
D. Venables United States	12	492 1.4×	171 0.8×	115 0.8×	17 0.4×	41 1.5×	44	549
R.M. Ware United Kingdom	11	252 0.7×	275 1.3×	138 1.0×	35 0.7×	21 0.8×	19	399
Li-Qun Xia United States	10	316 0.9×	145 0.7×	127 0.9×	34 0.7×	51 1.9×	24	397
R. Danielou France	12	265 0.8×	114 0.5×	290 2.0×	37 0.8×	14 0.5×	25	432

Countries citing papers authored by J. Hewett

Since Specialization

Citations

This map shows the geographic impact of J. Hewett's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Hewett with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Hewett more than expected).

Fields of papers citing papers by J. Hewett

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Hewett. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Hewett. The network helps show where J. Hewett may publish in the future.

Co-authorship network of co-authors of J. Hewett

This figure shows the co-authorship network connecting the top 25 collaborators of J. Hewett. A scholar is included among the top collaborators of J. Hewett based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Hewett. J. Hewett is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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15 of 15 papers shown

Jiang, Su, J. Hewett, I.P. Jones, Brian J. Connolly, & Yu‐Lung Chiu. (2020). Effect of misorientation angle and chromium concentration on grain boundary sensitisation in an austenitic stainless steel. Materials Characterization. 164. 110343–110343. 15 indexed citations

Wehrspohn, Ralf B., S. C. Deane, I. D. French, et al.. (2000). Relative importance of the Si–Si bond and Si–H bond for the stability of amorphous silicon thin film transistors. Journal of Applied Physics. 87(1). 144–154. 119 indexed citations

Wehrspohn, Ralf B., S. C. Deane, I. D. French, J. Hewett, & M. J. Powell. (1999). Stability of Amorphous Silicon Thin Film Transistors. MRS Proceedings. 557. 3 indexed citations

Gale, I. G., et al.. (1998). Control of performance and stability of thin film diodes using chromium nitride contacts. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 16(4). 2678–2682. 1 indexed citations

French, I. D., et al.. (1997). The Effect of the Amorphous Silicon Alpha-Gamma Transition on Thin Film Transistor Performance. MRS Proceedings. 467. 18 indexed citations

French, I. D., et al.. (1997). Control of stability and current-voltage characteristics in amorphous hydrogenated silicon nitride thin film diodes. Journal of Applied Physics. 82(4). 1711–1715. 2 indexed citations

Harris, J. J., et al.. (1990). Acoustic phonon scattering in ultra-high mobility, low carrier density GaAs/(Al,Ga)As heterojunctions. Surface Science. 229(1-3). 113–115. 26 indexed citations

Harris, J. J., Marco J. P. Brugmans, P. Dawson, et al.. (1990). The subband structure of modulation-doped pseudomorphic GaAs/(In,Ga)As/(Al,Ga)As layers. Semiconductor Science and Technology. 5(7). 669–674. 7 indexed citations

Foxon, C. T., J. J. Harris, David Hilton, J. Hewett, & Christine Cardinal Roberts. (1989). Optimisation of (Al,Ga)As/GaAs two-dimensional electron gas structures for low carrier densities and ultrahigh mobilities at low temperatures. Semiconductor Science and Technology. 4(7). 582–585. 86 indexed citations

10.

Lacklison, D. E., G. Duggan, Stephen Battersby, et al.. (1989). Effect of undoped GaAs spacers on the characteristics of GaAs-(Al,Ga)As-GaAs single barrier structures. Journal of Applied Physics. 65(3). 1183–1188. 3 indexed citations

11.

Lacklison, D. E., J. J. Harris, C. T. Foxon, et al.. (1988). A comparison of photoconduction effects in (Al, Ga)As and GaAs/(Al, Ga)As heterostructures. Semiconductor Science and Technology. 3(7). 633–640. 16 indexed citations

12.

Harris, J. J., C. T. Foxon, K.W.J. Barnham, et al.. (1987). Two-dimensional electron gas structures with mobilities in excess of 3×106 cm2 V−1 s−1. Journal of Applied Physics. 61(3). 1219–1221. 46 indexed citations

13.

Pratt, Ronald G., et al.. (1986). Minority-carrier lifetime in doped and undoped n-type CdxHg1−xTe. Journal of Applied Physics. 60(7). 2377–2385. 31 indexed citations

14.

Pratt, Ronald G., et al.. (1983). Minority carrier lifetime in n-type Bridgman grown Hg1−xCdxTe. Journal of Applied Physics. 54(9). 5152–5157. 41 indexed citations

15.

Scott, G. B., D. E. Lacklison, J. L. Page, & J. Hewett. (1976). Absorption spectra and magneto-optic figures of merit in the Bi x Sm3-x Fe5-y Ga y O12 system. Applied Physics A. 9(1). 71–77. 22 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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