F. Salvan

2.7k total citations · 1 hit paper
64 papers, 2.1k citations indexed

About

F. Salvan is a scholar working on Atomic and Molecular Physics, and Optics, Biomedical Engineering and Electrical and Electronic Engineering. According to data from OpenAlex, F. Salvan has authored 64 papers receiving a total of 2.1k indexed citations (citations by other indexed papers that have themselves been cited), including 53 papers in Atomic and Molecular Physics, and Optics, 20 papers in Biomedical Engineering and 19 papers in Electrical and Electronic Engineering. Recurrent topics in F. Salvan's work include Surface and Thin Film Phenomena (39 papers), Semiconductor materials and interfaces (18 papers) and Electron and X-Ray Spectroscopy Techniques (17 papers). F. Salvan is often cited by papers focused on Surface and Thin Film Phenomena (39 papers), Semiconductor materials and interfaces (18 papers) and Electron and X-Ray Spectroscopy Techniques (17 papers). F. Salvan collaborates with scholars based in France, Switzerland and United States. F. Salvan's co-authors include J. Derrien, G. Binnig, B. Reihl, Harald Fuchs, A. Cros, H. Rohrer, Nicolás García, A. R. Williams, K. H. Frank and P. Mathiez and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

F. Salvan

63 papers receiving 2.0k citations

Hit Papers

Tunneling Spectroscopy and Inverse Photoemission: Image a... 1985 2026 1998 2012 1985 100 200 300
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Tunneling Spectroscopy and Inverse Photoemission: Image and Field States
    1985 322 citations G. Binnig, Harald Fuchs et al. Physical Review Letters profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. Salvan France 24 1.7k 864 621 484 371 64 2.1k
V.G. Lifshits Russia 23 1.5k 0.8× 696 0.8× 577 0.9× 380 0.8× 347 0.9× 99 2.0k
Kenjiro Oura Japan 26 1.6k 0.9× 780 0.9× 606 1.0× 317 0.7× 631 1.7× 138 2.2k
J. M. Woodall United States 30 2.0k 1.2× 1.8k 2.1× 586 0.9× 338 0.7× 377 1.0× 98 2.8k
E. Landemark Sweden 21 1.4k 0.8× 774 0.9× 475 0.8× 163 0.3× 500 1.3× 32 1.7k
M. Katayama Japan 21 1.1k 0.6× 534 0.6× 495 0.8× 264 0.5× 306 0.8× 80 1.6k
Katsumichi Yagi Japan 22 1.0k 0.6× 401 0.5× 483 0.8× 260 0.5× 256 0.7× 79 1.5k
K. Besocke Germany 19 1.1k 0.6× 618 0.7× 585 0.9× 456 0.9× 134 0.4× 32 1.7k
K. W. Haberern United States 14 1.2k 0.7× 768 0.9× 425 0.7× 214 0.4× 207 0.6× 25 1.5k
P. W. Chye United States 26 2.2k 1.3× 2.1k 2.4× 702 1.1× 421 0.9× 796 2.1× 55 3.1k
J. P. Pelz United States 27 1.3k 0.8× 1.3k 1.5× 484 0.8× 301 0.6× 118 0.3× 80 2.0k

Countries citing papers authored by F. Salvan

Since Specialization
Citations

This map shows the geographic impact of F. Salvan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Salvan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Salvan more than expected).

Fields of papers citing papers by F. Salvan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Salvan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Salvan. The network helps show where F. Salvan may publish in the future.

Co-authorship network of co-authors of F. Salvan

This figure shows the co-authorship network connecting the top 25 collaborators of F. Salvan. A scholar is included among the top collaborators of F. Salvan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Salvan. F. Salvan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Dumas, Ph., et al.. (1997). STM-induced light emission of supported silver nanocrystallites. Europhysics Letters (EPL). 40(4). 447–452. 25 indexed citations
2.
Albertini, David F., F. Thibaudau, L. Masson, & F. Salvan. (1996). STM study of low pressure adsorption of silane on Si(111)7 × 7. Surface Science. 350(1-3). L216–L220. 10 indexed citations
3.
Thibaudau, F., et al.. (1993). A STM study on compared chemical reactivities of different Si(111) surfaces: copper growth and ferrocene adsorption. Microscopy Microanalysis Microstructures. 4(5). 419–427. 5 indexed citations
4.
Thibaudau, F., et al.. (1989). Structure of boron enriched Si(111) surfaces investigated by Auger, LEED and scanning tunneling microscopy. Surface Science. 211-212. 148–155. 20 indexed citations
5.
Nicholls, J. M., F. Salvan, & B. Reihl. (1986). Surface states of ordered Au, Ag, and Cu overlayers on Si(111) studied by inverse photoemission. Physical review. B, Condensed matter. 34(4). 2945–2948. 63 indexed citations
6.
Baratoff, A., G. Binnig, Harald Fuchs, F. Salvan, & E. Stoll. (1986). Tunneling microscopy and spectroscopy of semiconductor surfaces and interfaces. Surface Science. 168(1-3). 734–743. 40 indexed citations
7.
Nicholls, J. M., F. Salvan, & B. Reihl. (1986). Inverse-photoemission study of ordered Cu, Ag, and Au overlayers on Si(111). Surface Science. 178(1-3). 10–16. 11 indexed citations
8.
Derrien, J., et al.. (1983). Formation and properties of the copper silicon(111) interface. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 1(3). 546–552. 60 indexed citations
9.
Houzay, F., A. Cros, F. Salvan, et al.. (1983). Electronic properties of gold-silicon (111) 7 × 7 interfaces. Physica B+C. 117-118. 840–842. 3 indexed citations
10.
Marine, W., et al.. (1983). Transient gratings on a-GaAs under laser annealing conditions. Journal de Physique Lettres. 44(7). 271–278. 2 indexed citations
11.
Derrien, J., et al.. (1982). Al reaction with SiO2 an auger electron spectroscopy and energy loss spectroscopy study. Applied Physics A. 28(4). 247–250. 11 indexed citations
12.
Cros, A., F. Salvan, & J. Derrien. (1982). Laser-induced oxidation of the Si(111) surface. Applied Physics A. 28(4). 241–245. 13 indexed citations
13.
Derrien, J., C. M. S. Cohen, A. Cros, et al.. (1981). Au on Si (111): A study of the interface under UHV conditions and its modifications in air by surface techniques and MeV ion scattering. Applied Physics Letters. 39(11). 915–917. 15 indexed citations
14.
Cros, A., F. Salvan, Mireille Commandré, & J. Derrien. (1981). Enhancement of the room temperature oxidation of silicon by very thin predeposited gold layers. Surface Science Letters. 103(1). L109–L114. 5 indexed citations
15.
Cros, A., et al.. (1980). ELECTRONIC SPECTRA OF THE AMORPHOUS AuSi INTERFACE. Le Journal de Physique Colloques. 41(C8). C8–795. 7 indexed citations
16.
Derrien, J., Bernard Goldstein, Alain Cros, & F. Salvan. (1978). Light-sensitive electron-loss measurements on clean and oxygen-adsorbed amorphous silicon. Applied Physics Letters. 33(10). 881–883. 6 indexed citations
17.
Guillaume, C. Benoît à la, M. Voos, & F. Salvan. (1972). Condensation of Free Excitons into Electron-Hole Drops in Pure Germanium. Physical review. B, Solid state. 5(8). 3079–3087. 103 indexed citations
18.
Guillaume, C. Benoît à la, M. Voos, & F. Salvan. (1971). Motion of Electron-Hole Drops in Pure Ge. Physical Review Letters. 27(18). 1214–1217. 27 indexed citations
19.
Guillaume, C. Benoît à la, F. Salvan, & M. Voos. (1970). Investigation of the radiative recombination of the excitonic molecule in Ge and Si. Journal of Luminescence. 1-2. 315–323. 39 indexed citations
20.
Guillaume, C. Benoît à la, J.M. Debever, & F. Salvan. (1968). RECOMBINATION PROCESSES IN CdS UNDER HIGH EXCITATION.. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information). 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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