Hochul Hwang

568 total citations · 1 hit paper
11 papers, 429 citations indexed

About

Hochul Hwang is a scholar working on Biomedical Engineering, Electrical and Electronic Engineering and Social Psychology. According to data from OpenAlex, Hochul Hwang has authored 11 papers receiving a total of 429 indexed citations (citations by other indexed papers that have themselves been cited), including 6 papers in Biomedical Engineering, 5 papers in Electrical and Electronic Engineering and 2 papers in Social Psychology. Recurrent topics in Hochul Hwang's work include Semiconductor materials and devices (4 papers), Robotic Locomotion and Control (3 papers) and Prosthetics and Rehabilitation Robotics (2 papers). Hochul Hwang is often cited by papers focused on Semiconductor materials and devices (4 papers), Robotic Locomotion and Control (3 papers) and Prosthetics and Rehabilitation Robotics (2 papers). Hochul Hwang collaborates with scholars based in United States and South Korea. Hochul Hwang's co-authors include Philip Tan, Seung-Min Kang, Nanshu Lu, Liu Wang, Kyoungho Ha, Hongwoo Jang, Weiyi Zhang, Junghyun Cho, Donghyun Kim and Ig-Jae Kim and has published in prestigious journals such as Advanced Materials, Applied Physics Letters and IEEE Access.

In The Last Decade

Hochul Hwang

11 papers receiving 417 citations

Hit Papers

Highly Sensitive Capacitive Pressure Sensors over a Wide ... 2021 2026 2022 2024 2021 50 100 150 200 250

Peers

Hochul Hwang
Yongsang Yoo South Korea
Adam Dai United States
Min Kim South Korea
Chi Cuong Vu South Korea
Milan Raj United States
Yaohua Xu China
Yongsang Yoo South Korea
Hochul Hwang
Citations per year, relative to Hochul Hwang Hochul Hwang (= 1×) peers Yongsang Yoo

Countries citing papers authored by Hochul Hwang

Since Specialization
Citations

This map shows the geographic impact of Hochul Hwang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hochul Hwang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hochul Hwang more than expected).

Fields of papers citing papers by Hochul Hwang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hochul Hwang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hochul Hwang. The network helps show where Hochul Hwang may publish in the future.

Co-authorship network of co-authors of Hochul Hwang

This figure shows the co-authorship network connecting the top 25 collaborators of Hochul Hwang. A scholar is included among the top collaborators of Hochul Hwang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hochul Hwang. Hochul Hwang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

11 of 11 papers shown
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Hwang, Hochul, et al.. (2021). ElderSim: A Synthetic Data Generation Platform for Human Action Recognition in Eldercare Applications. IEEE Access. 11. 9279–9294. 43 indexed citations
4.
Ha, Kyoungho, Weiyi Zhang, Hongwoo Jang, et al.. (2021). Highly Sensitive Capacitive Pressure Sensors over a Wide Pressure Range Enabled by the Hybrid Responses of a Highly Porous Nanocomposite (Adv. Mater. 48/2021). Advanced Materials. 33(48). 10 indexed citations
5.
Ha, Kyoungho, Weiyi Zhang, Hongwoo Jang, et al.. (2021). Highly Sensitive Capacitive Pressure Sensors over a Wide Pressure Range Enabled by the Hybrid Responses of a Highly Porous Nanocomposite. Advanced Materials. 33(48). e2103320–e2103320. 289 indexed citations breakdown →
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Fazan, P., et al.. (1992). Degradation of junction leakage in devices subjected to gate oxidation in nitrous oxide (MOS transistors). IEEE Electron Device Letters. 13(12). 648–650. 9 indexed citations
9.
Hwang, Hochul, et al.. (1992). Anomalous breakdown behavior in ultrathin oxides and oxynitrides under dynamic electrical stress. IEEE Electron Device Letters. 13(9). 485–487. 22 indexed citations
10.
Hwang, Hochul, et al.. (1989). Electrical characteristics of reoxidized-nitrided chemical vapor deposited oxides. Applied Physics Letters. 55(8). 755–756. 3 indexed citations
11.
Hwang, Hochul, et al.. (1989). Effects of dynamic stressing on nitrided and reoxidized-nitrided chemical-vapor-deposited gate oxides. IEEE Electron Device Letters. 10(12). 568–570. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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