T. Stockmeier

468 total citations
24 papers, 312 citations indexed

About

T. Stockmeier is a scholar working on Electrical and Electronic Engineering, Control and Systems Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, T. Stockmeier has authored 24 papers receiving a total of 312 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 3 papers in Control and Systems Engineering and 2 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in T. Stockmeier's work include Silicon Carbide Semiconductor Technologies (17 papers), Semiconductor materials and devices (11 papers) and Advancements in Semiconductor Devices and Circuit Design (9 papers). T. Stockmeier is often cited by papers focused on Silicon Carbide Semiconductor Technologies (17 papers), Semiconductor materials and devices (11 papers) and Advancements in Semiconductor Devices and Circuit Design (9 papers). T. Stockmeier collaborates with scholars based in Switzerland, Germany and United States. T. Stockmeier's co-authors include F. Stucki, P. Brüesch, P. A. Buffat, F. Bauer, Wolf Fïchtner, H. William Dettmer, H. Lendenmann, K. Lilja, J.K.N. Lindner and S. Müller and has published in prestigious journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

T. Stockmeier

21 papers receiving 285 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
T. Stockmeier Switzerland	9	300	56	32	24	23	24	312
T. Sakai Japan	11	287 1.0×	27 0.5×	27 0.8×	4 0.2×	40 1.7×	39	320
Cuong Huynh United States	10	278 0.9×	35 0.6×	63 2.0×	8 0.3×	19 0.8×	45	317
H. Nakata Japan	12	292 1.0×	77 1.4×	23 0.7×	41 1.7×	21 0.9×	38	314
Y. Le Tiec France	10	431 1.4×	70 1.3×	14 0.4×	23 1.0×	62 2.7×	23	468
Minseok Kang South Korea	11	262 0.9×	25 0.4×	17 0.5×	4 0.2×	39 1.7×	42	300
M. Berth Switzerland	6	296 1.0×	173 3.1×	22 0.7×	5 0.2×	25 1.1×	8	328
M. Ishiko Japan	11	352 1.2×	39 0.7×	29 0.9×	6 0.3×	31 1.3×	31	384
Charles W. Koburger United States	9	212 0.7×	46 0.8×	46 1.4×	25 1.0×	77 3.3×	24	274
Mason L. Terry Australia	9	299 1.0×	138 2.5×	30 0.9×	9 0.4×	41 1.8×	19	349
Jean-Marc Dedulle France	11	279 0.9×	69 1.2×	104 3.3×	30 1.3×	15 0.7×	23	341

Countries citing papers authored by T. Stockmeier

Since Specialization

Citations

This map shows the geographic impact of T. Stockmeier's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Stockmeier with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Stockmeier more than expected).

Fields of papers citing papers by T. Stockmeier

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Stockmeier. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Stockmeier. The network helps show where T. Stockmeier may publish in the future.

Co-authorship network of co-authors of T. Stockmeier

This figure shows the co-authorship network connecting the top 25 collaborators of T. Stockmeier. A scholar is included among the top collaborators of T. Stockmeier based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Stockmeier. T. Stockmeier is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Stockmeier, T., et al.. (2012). Integrated power electronic solutions for renewable energy utilization. 1–5. 2 indexed citations

Stockmeier, T., et al.. (2011). SKiN: Double side sintering technology for new packages. 324–327. 74 indexed citations

Stockmeier, T.. (2008). From Packaging to "Un"-Packaging - Trends in Power Semiconductor Modules. 12–19. 44 indexed citations

Bauer, F., T. Stockmeier, H. Lendenmann, H. William Dettmer, & Wolf Fïchtner. (2005). Static and dynamic characteristics of high voltage ( 3.5 kV ) IGBT and MCT devices. 22–27. 2 indexed citations

Stockmeier, T., et al.. (2005). Novel planar junction termination technique for high voltage power devices. 23. 236–239. 1 indexed citations

Stockmeier, T. & K. Lilja. (2002). SIPOS-passivation for high voltage power devices with planar junction termination. 145–148. 7 indexed citations

Bauer, F., et al.. (2002). A comparison of emitter concepts for high voltage IGBTs. 230–235. 5 indexed citations

Lendenmann, H., H. William Dettmer, Ulrich Krumbein, et al.. (2002). Approaching homogeneous switching of MCT devices: experiment and simulation. 66–70. 7 indexed citations

Bauer, F., et al.. (2002). Design considerations and characteristics of rugged punchthrough (PT) IGBTs with 4.5 kV blocking capability. 327–330. 16 indexed citations

10.

Dettmer, H. William, Wolf Fïchtner, F. Bauer, & T. Stockmeier. (2002). Punch-through IGBTs with homogeneous n-base operating at 4 kV line voltage. 492–496. 15 indexed citations

11.

Baltes, H., et al.. (2002). Improving the gate oxide integrity of very high voltage MCT and IGBT devices by external gettering of metal impurities. 30. 213–218.

12.

Dettmer, H. William, Ulrich Krumbein, H. Lendenmann, et al.. (2002). A comparison of the switching behavior of IGBT and MCT power devices. vi. 54–59. 7 indexed citations

13.

Zehringer, R., et al.. (1999). The Standard Module of the 21 st Century. 1 indexed citations

14.

Stockmeier, T.. (1995). Reliable 1200 amp 2500 V IGBT modules for traction applications. 1995. 3–3. 5 indexed citations

15.

Brüesch, P., T. Stockmeier, F. Stucki, P. A. Buffat, & J. Lindner. (1993). Physical properties of semi-insulating polycrystalline silicon. III. Infrared diagnosis of the polycrystalline-Si/c-Si interface. Journal of Applied Physics. 73(11). 7701–7707. 4 indexed citations

16.

Brüesch, P., T. Stockmeier, F. Stucki, & P. A. Buffat. (1993). Physical properties of semi-insulating polycrystalline silicon. I. Structure, electronic properties, and electrical conductivity. Journal of Applied Physics. 73(11). 7677–7689. 49 indexed citations

17.

Bauer, F., K.R. Hofmann, T. Stockmeier, et al.. (1991). Design aspects of MOS-controlled thyristor elements: technology, simulation, and experimental results. IEEE Transactions on Electron Devices. 38(7). 1605–1611. 26 indexed citations

18.

Bauer, F., et al.. (1991). Current-handling and switching performance of MOS-controlled thyristor (MCT) structures. IEEE Electron Device Letters. 12(6). 297–299. 11 indexed citations

19.

Brüesch, P., et al.. (1990). Optical properties of aluminum-implanted and annealed silicon. Journal of Applied Physics. 67(4). 2074–2080. 1 indexed citations

20.

Brüesch, P., et al.. (1990). Electrical activity of aluminum implanted in silicon: An interface problem in high-power devices. Journal of Applied Physics. 68(5). 2226–2234. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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