Avinash S. Kashyap

673 total citations
20 papers, 545 citations indexed

About

Avinash S. Kashyap is a scholar working on Electrical and Electronic Engineering, Computer Networks and Communications and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Avinash S. Kashyap has authored 20 papers receiving a total of 545 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 2 papers in Computer Networks and Communications and 2 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Avinash S. Kashyap's work include Silicon Carbide Semiconductor Technologies (18 papers), Electromagnetic Compatibility and Noise Suppression (6 papers) and Advanced DC-DC Converters (5 papers). Avinash S. Kashyap is often cited by papers focused on Silicon Carbide Semiconductor Technologies (18 papers), Electromagnetic Compatibility and Noise Suppression (6 papers) and Advanced DC-DC Converters (5 papers). Avinash S. Kashyap collaborates with scholars based in United States, India and Japan. Avinash S. Kashyap's co-authors include H. Alan Mantooth, Juan Carlos Balda, Tsuyoshi Funaki, Jeremy Junghans, Takashi Hikihara, Fred Barlow, Tsunenobu Kimoto Tsunenobu Kimoto, Leon M. Tolbert, Madhu Chinthavali and Burak Ozpineci and has published in prestigious journals such as IEEE Transactions on Power Electronics, IEEE Transactions on Industry Applications and IEEE Transactions on Electron Devices.

In The Last Decade

Avinash S. Kashyap

20 papers receiving 512 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Avinash S. Kashyap United States 8 530 78 37 21 20 20 545
Enea Bianda Switzerland 13 469 0.9× 48 0.6× 27 0.7× 13 0.6× 16 0.8× 49 484
Ljubisa Stevanovic United States 15 622 1.2× 100 1.3× 19 0.5× 18 0.9× 21 1.1× 35 680
Peter A. Losee United States 13 562 1.1× 31 0.4× 39 1.1× 22 1.0× 12 0.6× 41 573
Juan Colmenares Sweden 15 627 1.2× 55 0.7× 19 0.5× 51 2.4× 18 0.9× 25 647
Georg Tolstoy Sweden 12 692 1.3× 51 0.7× 19 0.5× 39 1.9× 11 0.6× 23 699
Umamaheswara Vemulapati Switzerland 12 610 1.2× 37 0.5× 42 1.1× 38 1.8× 21 1.1× 41 628
Shi Pu United States 14 715 1.3× 35 0.4× 41 1.1× 71 3.4× 9 0.5× 27 736
David Grider United States 16 1.1k 2.0× 40 0.5× 25 0.7× 22 1.0× 20 1.0× 33 1.1k
Brice McPherson United States 12 355 0.7× 58 0.7× 13 0.4× 8 0.4× 15 0.8× 32 375
T. Laska Germany 12 813 1.5× 134 1.7× 33 0.9× 68 3.2× 23 1.1× 27 845

Countries citing papers authored by Avinash S. Kashyap

Since Specialization
Citations

This map shows the geographic impact of Avinash S. Kashyap's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Avinash S. Kashyap with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Avinash S. Kashyap more than expected).

Fields of papers citing papers by Avinash S. Kashyap

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Avinash S. Kashyap. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Avinash S. Kashyap. The network helps show where Avinash S. Kashyap may publish in the future.

Co-authorship network of co-authors of Avinash S. Kashyap

This figure shows the co-authorship network connecting the top 25 collaborators of Avinash S. Kashyap. A scholar is included among the top collaborators of Avinash S. Kashyap based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Avinash S. Kashyap. Avinash S. Kashyap is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Oggier, Germán G., et al.. (2022). Static and Dynamic Characterization of 3.3-kV SiC MOSFET Modules With and Without External Anti- Parallel SiC JBS Diode. 2022 IEEE Energy Conversion Congress and Exposition (ECCE). 1–5. 7 indexed citations
2.
Kashyap, Avinash S., et al.. (2021). Enhancing Fault Tolerance using Load Allocation Technique during Virtualization in Cloud Computing. 1798–1801. 1 indexed citations
3.
Kashyap, Avinash S., et al.. (2020). Streamlined SiC Development With a Total System Solution: Marching Toward a New Paradigm. IEEE Power Electronics Magazine. 7(3). 28–35. 2 indexed citations
4.
Meyer, Dennis J., et al.. (2019). High-Performance 700 V SiC MOSFETs for the Industrial Market. 2 indexed citations
5.
Kashyap, Avinash S., et al.. (2018). Beyond the Datasheet: Commercialization of 700 V - 1.7 kV SiC Devices with Exceptional Ruggedness for Automotive & Industrial Applications. 1–7. 3 indexed citations
6.
Kashyap, Avinash S., et al.. (2018). 4H-SiC 1200 V Junction Barrier Schottky Diodes with High Avalanche Ruggedness. Materials science forum. 924. 585–588. 7 indexed citations
7.
Kashyap, Avinash S., et al.. (2018). 4H-SiC Junction Barrier Schottky Diodes and Power MOSFETs with High Repetitive UIS Ruggedness. 850–856. 2 indexed citations
8.
Lee, Mingyu, et al.. (2017). Highly rugged 1200 V 80 mQ 4-H SiC power MOSFET. 371–374. 6 indexed citations
9.
Blalock, Benjamin J., et al.. (2016). A silicon carbide integrated circuit implementing nonlinear-carrier control for boost converter applications. 10. 3255–3258. 1 indexed citations
10.
Ghandi, Reza, et al.. (2015). SiC Lateral Diodes for ESD Protection of High Temperature Integrated Circuits. Additional Conferences (Device Packaging HiTEC HiTEN & CICMT). 2015(HiTEN). 1–4. 1 indexed citations
11.
Kashyap, Avinash S., et al.. (2014). Silicon carbide transient voltage suppressor for next generation lightning protection. 147–150. 2 indexed citations
12.
Kashyap, Avinash S., Reza Ghandi, Liang Yin, et al.. (2013). Silicon carbide integrated circuits for extreme environments. 60–63. 30 indexed citations
13.
Vert, Alexey, et al.. (2012). Silicon Carbide High Temperature Operational Amplifier. Additional Conferences (Device Packaging HiTEC HiTEN & CICMT). 2012(HITEC). 378–383. 9 indexed citations
14.
Glaser, John, Jeffrey Nasadoski, Peter A. Losee, et al.. (2011). Direct comparison of silicon and silicon carbide power transistors in high-frequency hard-switched applications. 1049–1056. 79 indexed citations
15.
Kashyap, Avinash S., et al.. (2011). Compact modeling of silicon carbide lateral MOSFETs for extreme environment integrated circuits. 1–2. 7 indexed citations
16.
Kashyap, Avinash S., et al.. (2010). Compact Modeling of LDMOS Transistors for Extreme Environment Analog Circuit Design. IEEE Transactions on Electron Devices. 57(6). 1431–1439. 17 indexed citations
17.
Ozpineci, Burak, Madhu Chinthavali, Leon M. Tolbert, Avinash S. Kashyap, & H. Alan Mantooth. (2009). A 55-kW Three-Phase Inverter With Si IGBTs and SiC Schottky Diodes. IEEE Transactions on Industry Applications. 45(1). 278–285. 78 indexed citations
18.
Funaki, Tsuyoshi, Juan Carlos Balda, Jeremy Junghans, et al.. (2007). Power Conversion With SiC Devices at Extremely High Ambient Temperatures. IEEE Transactions on Power Electronics. 22(4). 1321–1329. 264 indexed citations
19.
Ozpineci, Burak, Madhu Chinthavali, Leon M. Tolbert, Avinash S. Kashyap, & H. Alan Mantooth. (2006). A 55 kW Three-Phase Inverter with Si IGBTs and. 2 indexed citations
20.
Funaki, Tsuyoshi, Juan Carlos Balda, Jeremy Junghans, et al.. (2004). SiC JFET dc characteristics under extremely high ambient temperatures. IEICE Electronics Express. 1(17). 523–527. 25 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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