H.-E. Wulf

402 total citations
12 papers, 110 citations indexed

About

H.-E. Wulf is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, H.-E. Wulf has authored 12 papers receiving a total of 110 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Electrical and Electronic Engineering, 2 papers in Atomic and Molecular Physics, and Optics and 1 paper in Condensed Matter Physics. Recurrent topics in H.-E. Wulf's work include Radio Frequency Integrated Circuit Design (7 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers) and Silicon Carbide Semiconductor Technologies (5 papers). H.-E. Wulf is often cited by papers focused on Radio Frequency Integrated Circuit Design (7 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers) and Silicon Carbide Semiconductor Technologies (5 papers). H.-E. Wulf collaborates with scholars based in Germany and Hungary. H.-E. Wulf's co-authors include R. Barth, D. Schmidt, P. Schley, D. Knoll, H. Rücker, B. Heinemann, D. Bolze, K.‐E. Ehwald, Wolfgang Winkler and Nihar R. Mohapatra and has published in prestigious journals such as Frequenz and physica status solidi (a).

In The Last Decade

H.-E. Wulf

12 papers receiving 104 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
H.-E. Wulf Germany	6	110	14	5	5	4	12	110
Peter Gray United States	6	98 0.9×	10 0.7×	6 1.2×	12 2.4×	2 0.5×	14	98
F. Pagette United States	5	105 1.0×	17 1.2×	5 1.0×	12 2.4×	3 0.8×	6	110
M. Schott Germany	5	58 0.5×	15 1.1×	3 0.6×	8 1.6×		13	63
Thomas Quémerais France	8	127 1.2×	9 0.6×	5 1.0×	12 2.4×	1 0.3×	12	129
D. Coolbaugh United States	6	117 1.1×	11 0.8×	3 0.6×	8 1.6×	5 1.3×	12	117
Suren Karabekyan Germany	5	44 0.4×	17 1.2×	3 0.6×	9 1.8×	4 1.0×	14	53
A. Vardanyan Armenia	4	30 0.3×	19 1.4×	2 0.4×	3 0.6×	4 1.0×	18	36
C.-H. Jan United States	4	84 0.8×	11 0.8×	4 0.8×	5 1.0×	7 1.8×	6	91
A. Margain France	4	73 0.7×	8 0.6×	3 0.6×	9 1.8×	4 1.0×	6	78
F. Meli Italy	7	115 1.0×	23 1.6×		4 0.8×	2 0.5×	16	117

Countries citing papers authored by H.-E. Wulf

Since Specialization

Citations

This map shows the geographic impact of H.-E. Wulf's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H.-E. Wulf with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H.-E. Wulf more than expected).

Fields of papers citing papers by H.-E. Wulf

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H.-E. Wulf. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H.-E. Wulf. The network helps show where H.-E. Wulf may publish in the future.

Co-authorship network of co-authors of H.-E. Wulf

This figure shows the co-authorship network connecting the top 25 collaborators of H.-E. Wulf. A scholar is included among the top collaborators of H.-E. Wulf based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H.-E. Wulf. H.-E. Wulf is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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12 of 12 papers shown

1.

Sorge, R., A. Fischer, K.‐E. Ehwald, et al.. (2008). High Voltage Complementary Epi Free LDMOS Module with 70 V PLDMOS for a 0.25 μm SiGe:C BiCMOS Platform. 58–61. 3 indexed citations

2.

Knoll, D., B. Heinemann, Y. Yamamoto, H.-E. Wulf, & D. Schmidt. (2007). PNP SiGe: C HBT Optimization in a Low-Cost CBiCMOS Process. 2004 7. 30–33. 5 indexed citations

3.

Mohapatra, Nihar R., K.‐E. Ehwald, R. Sorge, et al.. (2006). A Complementary RF-LDMOS Architecture Compatible with 0.13μm CMOS Technology. 1–4. 12 indexed citations

4.

Rücker, H., R. Barth, D. Bolze, et al.. (2005). Integration of high-performance SiGe:C HBTs with thin-film SOI CMOS. 239–242. 5 indexed citations

5.

Mohapatra, Nihar R., K.‐E. Ehwald, R. Barth, et al.. (2005). The impact of channel engineering on the performance and reliability of LDMOS transistors. 481–484. 10 indexed citations

6.

Rücker, H., B. Heinemann, R. Barth, et al.. (2004). SiGe:C BiCMOS technology with 3.6 ps gate delay. 5.3.1–5.3.4. 34 indexed citations

7.

Ehwald, K.‐E., A. Fischer, Wolfgang Winkler, et al.. (2004). A two mask complementary LDMOS module integrated in a 0.25 μm SiGe:C BiCMOS platform. 895. 121–124. 12 indexed citations

8.

Ehwald, K.‐E., B. Heinemann, Wolfgang Winkler, et al.. (2002). High performance RF LDMOS transistors with 5 nm gate oxide in a 0.25 μm SiGe:C BiCMOS technology. 40.4.1–40.4.4. 10 indexed citations

9.

Heinemann, B., D. Krüger, R. Kurps, et al.. (2001). Cost-effective high-performance high-voltage SiGe:C HBTs with 100 GHz f/sub T/ and BV/sub CEO/ /spl times/ f/sub T/ products exceeding 220 VGHz. 15.6.1–15.6.4. 11 indexed citations

10.

Wulf, H.-E. & E. Voges. (1991). Computer Aided Design of Integrated Optical Circuits. Frequenz. 45(9-10). 2 indexed citations

11.

Sieber, N., et al.. (1991). Application of Electrochemical Capacitance - Voltage Measurements for Profiling in Silicon. physica status solidi (a). 126(2). K123–K127. 4 indexed citations

12.

Sieber, N. & H.-E. Wulf. (1991). Some Limitations of the Measurement of Dopant Distribution in Silicon Layers using Electrochemical Capacitance-Voltage Measurements. physica status solidi (a). 126(1). 213–220. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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