K.‐E. Ehwald

643 total citations
37 papers, 312 citations indexed

About

K.‐E. Ehwald is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, K.‐E. Ehwald has authored 37 papers receiving a total of 312 indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Electrical and Electronic Engineering, 9 papers in Biomedical Engineering and 7 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in K.‐E. Ehwald's work include Advancements in Semiconductor Devices and Circuit Design (16 papers), Radio Frequency Integrated Circuit Design (13 papers) and Semiconductor materials and devices (8 papers). K.‐E. Ehwald is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (16 papers), Radio Frequency Integrated Circuit Design (13 papers) and Semiconductor materials and devices (8 papers). K.‐E. Ehwald collaborates with scholars based in Germany, Ukraine and Türkiye. K.‐E. Ehwald's co-authors include M. Birkholz, D. Wolansky, P. Schley, B. Heinemann, D. Knoll, Maik Fröhlich, R. Barth, Katrin Schulz, Mehmet Kaynak and J. Drews and has published in prestigious journals such as Journal of Applied Physics, Advanced Functional Materials and Applied Surface Science.

In The Last Decade

K.‐E. Ehwald

35 papers receiving 296 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
K.‐E. Ehwald Germany	11	224	102	55	38	31	37	312
Kai Kolari Finland	9	188 0.8×	180 1.8×	39 0.7×	48 1.3×	27 0.9×	20	311
Franz Laermer Germany	8	188 0.8×	153 1.5×	43 0.8×	35 0.9×	15 0.5×	9	285
I. Kasko Germany	10	283 1.3×	52 0.5×	65 1.2×	158 4.2×	20 0.6×	31	356
A. Malavé Germany	12	168 0.8×	203 2.0×	156 2.8×	100 2.6×	38 1.2×	21	371
Matthieu Guirardel France	12	129 0.6×	232 2.3×	132 2.4×	25 0.7×	10 0.3×	17	326
Nathan Marchack United States	11	315 1.4×	32 0.3×	80 1.5×	95 2.5×	54 1.7×	33	363
T.S.Y. Moh Netherlands	8	287 1.3×	183 1.8×	139 2.5×	40 1.1×	13 0.4×	18	369
T. Ivanov Bulgaria	11	301 1.3×	73 0.7×	132 2.4×	99 2.6×	15 0.5×	38	380
Ming-Leung Vincent Tse Hong Kong	11	413 1.8×	88 0.9×	176 3.2×	35 0.9×	9 0.3×	16	476
Christine H. Tsau United States	4	221 1.0×	98 1.0×	115 2.1×	12 0.3×	17 0.5×	8	276

Countries citing papers authored by K.‐E. Ehwald

Since Specialization

Citations

This map shows the geographic impact of K.‐E. Ehwald's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K.‐E. Ehwald with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K.‐E. Ehwald more than expected).

Fields of papers citing papers by K.‐E. Ehwald

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K.‐E. Ehwald. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K.‐E. Ehwald. The network helps show where K.‐E. Ehwald may publish in the future.

Co-authorship network of co-authors of K.‐E. Ehwald

This figure shows the co-authorship network connecting the top 25 collaborators of K.‐E. Ehwald. A scholar is included among the top collaborators of K.‐E. Ehwald based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K.‐E. Ehwald. K.‐E. Ehwald is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Birkholz, M., et al.. (2012). 2.2.1 Minimal-invasiver Blutzuckersensor (MIBS). Tagungsband. 177–187. 2 indexed citations

Birkholz, M., K.‐E. Ehwald, J. Drews, et al.. (2011). Ultrathin TiN Membranes as a Technology Platform for CMOS‐Integrated MEMS and BioMEMS Devices. Advanced Functional Materials. 21(9). 1652–1656. 39 indexed citations

Bauer, J., U. Haak, Mehmet Kaynak, et al.. (2011). Alignment technology for backside integration. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7985. 798508–798508. 7 indexed citations

Kaynak, Mehmet, K.‐E. Ehwald, J. Drews, et al.. (2010). Embedded MEMS modules for BiCMOS process. German Microwave Conference. 78–81.

Birkholz, M., et al.. (2010). Separation of extremely miniaturized medical sensors by IR laser dicing. Journal of Optoelectronics and Advanced Materials. 12(3). 479–483. 12 indexed citations

Birkholz, M., K.‐E. Ehwald, D. Wolansky, et al.. (2009). Corrosion-resistant metal layers from a CMOS process for bioelectronic applications. Surface and Coatings Technology. 204(12-13). 2055–2059. 34 indexed citations

Mohapatra, Nihar R., K.‐E. Ehwald, R. Sorge, et al.. (2006). A Complementary RF-LDMOS Architecture Compatible with 0.13μm CMOS Technology. 1–4. 12 indexed citations

Knoll, D., A. Fox, K.‐E. Ehwald, et al.. (2005). A low-cost SiGe:C BiCMOS technology with embedded flash memory and complementary LDMOS module. 132–135. 5 indexed citations

Arguirov, T., M. Kittler, W. Seifert, et al.. (2003). Luminescence of Silicon Implanted with Phosphorus. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 95-96. 289–296. 2 indexed citations

10.

Ehwald, K.‐E., B. Heinemann, Wolfgang Winkler, et al.. (2002). High performance RF LDMOS transistors with 5 nm gate oxide in a 0.25 μm SiGe:C BiCMOS technology. 40.4.1–40.4.4. 10 indexed citations

11.

Knoll, D., H. Rücker, B. Heinemann, et al.. (2002). HBT before CMOS, a new modular SiGe BiCMOS integration scheme. 22.2.1–22.2.4. 3 indexed citations

12.

Müssig, H.‐J., et al.. (2001). Can Si(113) wafers be an alternative to Si(001)?. Microelectronic Engineering. 56(1-2). 195–203. 17 indexed citations

13.

Knoll, D., B. Heinemann, K.‐E. Ehwald, & Gerhard G. Fischer. (2000). Emitter Scaling of Single-Polysilicon SiGe:C HBTs with Highly Doped Base Layers. 560–563. 2 indexed citations

14.

Knoll, D., Gunter Fischer, K.‐E. Ehwald, et al.. (1996). Base currents of Si/SiGe/Si HBT in dependence on the processing conditions. Applied Surface Science. 102. 247–251.

15.

Knoll, D., B. Heinemann, K.‐E. Ehwald, et al.. (1995). Comparison of P In Situ Spike Doped with as Implanted Poly Silicon Emitters Concerning Si/SiGe/Si HBT Application. European Solid-State Device Research Conference. 627–630. 1 indexed citations

16.

Herzel, Frank, et al.. (1995). Deconvolution of narrow boron SIMS depth profiles in Si and SiGe. Surface and Interface Analysis. 23(11). 764–770. 10 indexed citations

17.

Ehwald, K.‐E., et al.. (1993). A BCCD-based dosimeter for mixed radiation fields. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 326(1-2). 304–309. 2 indexed citations

18.

Ritter, G., K.‐E. Ehwald, & D. Knoll. (1993). Gettering and defect engineering for a low noise CCD compatible 1.5 μm BICMOS technology. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 326(1-2). 3–9. 1 indexed citations

19.

Richter, Ralf P., et al.. (1990). A new 0·5μm 2 DRAM cell with internal charge gain investigated by 2D transient device simulation. 173–176. 1 indexed citations

20.

Ehwald, K.‐E. & B. Glück. (1982). Generation lifetime determination from current voltage or current-time measurements for unknown doping profile. Solid-State Electronics. 25(1). 77–78. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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