H.C. Cheng

605 total citations
34 papers, 497 citations indexed

About

H.C. Cheng is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, H.C. Cheng has authored 34 papers receiving a total of 497 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Electrical and Electronic Engineering, 18 papers in Atomic and Molecular Physics, and Optics and 8 papers in Materials Chemistry. Recurrent topics in H.C. Cheng's work include Semiconductor materials and interfaces (17 papers), Silicon and Solar Cell Technologies (15 papers) and Semiconductor materials and devices (12 papers). H.C. Cheng is often cited by papers focused on Semiconductor materials and interfaces (17 papers), Silicon and Solar Cell Technologies (15 papers) and Semiconductor materials and devices (12 papers). H.C. Cheng collaborates with scholars based in Taiwan, China and United States. H.C. Cheng's co-authors include Tri‐Rung Yew, L. J. Chen, M.H. Juang, Li–Chyong Chen, Kuei‐Hsien Chen, Hong Wan, Wei Yan, Ya‐Hsiang Tai, Bo‐Ting Chen and Shih‐Chun Wei and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

H.C. Cheng

33 papers receiving 478 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H.C. Cheng Taiwan 12 316 279 150 65 58 34 497
A. Lahav Israel 12 335 1.1× 321 1.2× 95 0.6× 36 0.6× 42 0.7× 16 436
Simon Gaudet Canada 10 438 1.4× 372 1.3× 180 1.2× 110 1.7× 44 0.8× 15 573
Kazuhiko Tsutsumi Japan 11 192 0.6× 147 0.5× 121 0.8× 123 1.9× 61 1.1× 51 338
H. K. Liou United States 8 479 1.5× 169 0.6× 143 1.0× 40 0.6× 170 2.9× 11 515
E. Ganin United States 12 547 1.7× 173 0.6× 121 0.8× 75 1.2× 57 1.0× 31 634
D. Chidambarrao United States 12 398 1.3× 132 0.5× 114 0.8× 94 1.4× 57 1.0× 43 514
M. Bartur United States 10 292 0.9× 300 1.1× 104 0.7× 29 0.4× 111 1.9× 22 414
B. Ebersberger Germany 11 436 1.4× 256 0.9× 118 0.8× 122 1.9× 48 0.8× 26 540
M. Finetti Finland 15 509 1.6× 368 1.3× 112 0.7× 38 0.6× 46 0.8× 44 597
S. Kahl Sweden 13 346 1.1× 286 1.0× 90 0.6× 62 1.0× 97 1.7× 28 532

Countries citing papers authored by H.C. Cheng

Since Specialization
Citations

This map shows the geographic impact of H.C. Cheng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H.C. Cheng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H.C. Cheng more than expected).

Fields of papers citing papers by H.C. Cheng

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H.C. Cheng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H.C. Cheng. The network helps show where H.C. Cheng may publish in the future.

Co-authorship network of co-authors of H.C. Cheng

This figure shows the co-authorship network connecting the top 25 collaborators of H.C. Cheng. A scholar is included among the top collaborators of H.C. Cheng based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H.C. Cheng. H.C. Cheng is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Juang, Miin‐Horng, et al.. (2008). Formation of thin-film transistors with a polycrystalline hetero-structure channel layer. Semiconductor Science and Technology. 23(8). 85017–85017. 2 indexed citations
2.
Lai, Yi‐Sheng, et al.. (2007). Crystallinity and electrical properties of (Pb,Sr)TiO3 films enhanced by laser-assisted low-thermal-budget annealing. Applied Physics A. 89(1). 213–219. 1 indexed citations
3.
4.
Cheng, H.C.. (2005). Factors influencing the wearing of protective gloves in orthodontic practice. European Journal of Orthodontics. 27(1). 64–71. 6 indexed citations
5.
Tai, Ya‐Hsiang, et al.. (2005). A New Pixel Circuit for Driving Organic Light-Emitting Diode With Low Temperature Polycrystalline Silicon Thin-Film Transistors. Journal of Display Technology. 1(1). 100–104. 63 indexed citations
6.
Tai, Ya‐Hsiang, et al.. (1996). Electrical properties of amorphous silicon films with different thicknesses in metal/insulator/semiconductor structures. Materials Chemistry and Physics. 44(2). 182–185. 1 indexed citations
7.
Liu, Han‐Wen, et al.. (1995). Novel tunneling dielectric prepared by oxidation of ultrathin rugged polysilicon for 5-V-only nonvolatile memories. IEEE Electron Device Letters. 16(6). 250–252. 2 indexed citations
8.
Cheng, H.C., et al.. (1995). Superior low-pressure-oxidized Si3N4 films on rapid-thermal-nitrided poly-Si for high-density DRAM's. IEEE Electron Device Letters. 16(11). 509–511. 7 indexed citations
9.
Juang, M.H., et al.. (1994). Shallow junctions formed by BF+2 implantation into thin CoSi films and rapid thermal annealing. Journal of Applied Physics. 76(2). 1323–1325. 4 indexed citations
10.
Su, Huan, et al.. (1994). Superthin O/N/O stacked dielectrics formed by oxidizing thin nitrides in low pressure oxygen for high-density memory devices. IEEE Electron Device Letters. 15(11). 440–442. 8 indexed citations
11.
12.
13.
Juang, M.H. & H.C. Cheng. (1992). The reverse anneal of junction characteristics in forming shallow p/sup +/-n junction by BF/sub 2//sup +/ implantation into thin Co films on Si substrate. IEEE Electron Device Letters. 13(4). 220–222. 3 indexed citations
14.
Juang, M.H. & H.C. Cheng. (1992). Formation of shallow p+n junctions by implanting BF2− ions into thin cobalt films on silicon substrates. Solid-State Electronics. 35(4). 453–457. 7 indexed citations
15.
Juang, M.H. & H.C. Cheng. (1992). Formation of self-aligned TiSi2p+−n junctions by implanting BF2+ ions through thin Ti or SiO2 film on Si substrate rapid thermal annealing. Solid-State Electronics. 35(10). 1529–1534. 1 indexed citations
16.
Juang, M.H., et al.. (1992). Influence of implant condition on the transient-enhanced diffusion of ion-implanted boron in silicon. Journal of Applied Physics. 71(6). 2611–2614. 1 indexed citations
17.
Cheng, H.C., et al.. (1992). The process window of a-Si/Ti bilayer metallization for an oxidation-resistant and self-aligned TiSi/sub 2/ process. IEEE Transactions on Electron Devices. 39(8). 1835–1843. 4 indexed citations
18.
Cheng, H.C., et al.. (1985). Localized epitaxial growth of C54 and C49 TiSi2 on (111)Si. Applied Physics Letters. 47(12). 1312–1314. 52 indexed citations
19.
Cheng, H.C., et al.. (1985). Interfacial reactions of iron thin films on silicon. Journal of Applied Physics. 57(12). 5246–5250. 80 indexed citations
20.
Cheng, H.C., et al.. (1985). Epitaxial growth of ZrSi2 on silicon with an ion beam mixing assisted scheme. Applied Physics Letters. 46(6). 562–564. 26 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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