M. Finetti

732 total citations
44 papers, 597 citations indexed

About

M. Finetti is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, M. Finetti has authored 44 papers receiving a total of 597 indexed citations (citations by other indexed papers that have themselves been cited), including 40 papers in Electrical and Electronic Engineering, 33 papers in Atomic and Molecular Physics, and Optics and 7 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in M. Finetti's work include Semiconductor materials and interfaces (32 papers), Semiconductor materials and devices (20 papers) and Silicon and Solar Cell Technologies (17 papers). M. Finetti is often cited by papers focused on Semiconductor materials and interfaces (32 papers), Semiconductor materials and devices (20 papers) and Silicon and Solar Cell Technologies (17 papers). M. Finetti collaborates with scholars based in Finland, United States and Italy. M. Finetti's co-authors include A. Scorzoni, I. Suni, G. Soncini, S. Solmi, P. Negrini, M.−A. Nicolet, P. Ostoja, M‐A. Nicolet, M. Mäenpää and D. Nobili and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

M. Finetti

43 papers receiving 516 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Finetti Finland 15 509 368 112 57 50 44 597
M. Bartur United States 10 292 0.6× 300 0.8× 104 0.9× 55 1.0× 52 1.0× 22 414
A. Lahav Israel 12 335 0.7× 321 0.9× 95 0.8× 43 0.8× 35 0.7× 16 436
Steven C. Shatas United States 10 400 0.8× 145 0.4× 144 1.3× 26 0.5× 43 0.9× 26 445
C. Doland United States 13 414 0.8× 173 0.5× 272 2.4× 28 0.5× 29 0.6× 25 554
Y. Ohmura Japan 12 414 0.8× 171 0.5× 194 1.7× 40 0.7× 27 0.5× 58 522
J. W. Honeycutt United States 8 300 0.6× 330 0.9× 101 0.9× 24 0.4× 29 0.6× 20 406
Ronald S. Nowicki United States 10 255 0.5× 150 0.4× 97 0.9× 125 2.2× 98 2.0× 19 366
H. A. Vander Plas United States 9 216 0.4× 115 0.3× 124 1.1× 41 0.7× 37 0.7× 15 295
E. Ganin United States 12 547 1.1× 173 0.5× 121 1.1× 28 0.5× 19 0.4× 31 634
H. K. Liou United States 8 479 0.9× 169 0.5× 143 1.3× 30 0.5× 41 0.8× 11 515

Countries citing papers authored by M. Finetti

Since Specialization
Citations

This map shows the geographic impact of M. Finetti's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Finetti with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Finetti more than expected).

Fields of papers citing papers by M. Finetti

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Finetti. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Finetti. The network helps show where M. Finetti may publish in the future.

Co-authorship network of co-authors of M. Finetti

This figure shows the co-authorship network connecting the top 25 collaborators of M. Finetti. A scholar is included among the top collaborators of M. Finetti based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Finetti. M. Finetti is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Armigliato, A., et al.. (1988). A preparation technique for TEM cross-sections of test structures with reduced feature size. Ultramicroscopy. 26(3). 295–300. 4 indexed citations
2.
Finetti, M., et al.. (1987). Electrical and Structural Characterization of Electromigration in Al-Si/Ti Multilayer Interconnects. European Solid-State Device Research Conference. 225–228. 1 indexed citations
3.
Scorzoni, A., M. Finetti, G. Soncini, & I. Suni. (1987). Ohmic contact resistance evaluation in silicon planar structures: application to the CoSi2/n+Si interface. 56(8). 341–345. 1 indexed citations
4.
5.
Armigliato, A., M. Finetti, S. Guerri, et al.. (1986). Electron microscopy observations of N2+ -implanted TiN films as diffusion barriers for very-large-scale integration applications. Thin Solid Films. 140(1). 173–176. 3 indexed citations
6.
Mazzone, A. & M. Finetti. (1985). Monte carlo simulation of mixing of a multilayered target. Radiation Effects. 87(4). 155–161. 2 indexed citations
7.
Armigliato, A., M. Finetti, Javier Garrido, et al.. (1985). Ion-implanted, electron-beam annealed TiN films as diffusion barriers for Al on Si shallow junctions. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 3(6). 2237–2241. 27 indexed citations
8.
9.
Finetti, M., et al.. (1985). Electromigration Resistance of Multilayer Aluminum/Titanium Interconnects. MRS Proceedings. 54. 2 indexed citations
10.
Finetti, M., A. Scorzoni, & G. Soncini. (1985). A further comment on "Determining specific contact resistivity from contact end resistance measurements". IEEE Electron Device Letters. 6(4). 184–185. 5 indexed citations
11.
Suni, I., et al.. (1985). Effect of Preamorphization Depth on Channeling Tails in B+ and As+ Implanted Silicon. MRS Proceedings. 45. 5 indexed citations
12.
Finetti, M., A. Scorzoni, & G. Soncini. (1984). Lateral current crowding effects on contact resistance measurements in four terminal resistor test patterns. IEEE Electron Device Letters. 5(12). 524–526. 47 indexed citations
13.
Finetti, M., I. Suni, & M‐A. Nicolet. (1984). Titanium nitride as a diffusion barrier between nickel silicide and aluminum. Journal of Electronic Materials. 13(2). 327–340. 17 indexed citations
14.
Finetti, M., I. Suni, M. Bartur, T.C. Banwell, & M.−A. Nicolet. (1984). Schottky barrier height of sputtered TiN contacts on silicon. Solid-State Electronics. 27(7). 617–623. 30 indexed citations
15.
Colgan, E. G., M. Mäenpää, M. Finetti, & M-A. Nicolet. (1983). Electrical characteristics of thin Ni2Si, NiSi, and NiSi2 layers grown on silicon. Journal of Electronic Materials. 12(2). 413–422. 53 indexed citations
16.
Finetti, M., et al.. (1982). Self-annealed ion implanted n+-p diodes. Applied Physics Letters. 40(1). 62–64. 22 indexed citations
17.
Finetti, M., R. Galloni, & A. M. Mazzone. (1979). Influence of impurities and crystalline defects on electron mobility in heavily doped silicon. Journal of Applied Physics. 50(3). 1381–1385. 22 indexed citations
18.
Finetti, M., P. Ostoja, S. Solmi, & G. Soncini. (1978). Minority carriers lifetime degradation during ion implanted silicon solar cell processing. Revue de Physique Appliquée. 13(12). 809–813. 2 indexed citations
19.
Finetti, M. & A. M. Mazzone. (1977). Impurity effects on conduction in heavily doped n-type silicon. Journal of Applied Physics. 48(11). 4597–4600. 8 indexed citations
20.
Finetti, M., et al.. (1977). Temperature dependent conductivity of closely compensated phosphorus-doped silicon. Philosophical magazine. 35(5). 1141–1151. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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