M. Finetti

732 citations

44 papers · 597 indexed · h-index 15

Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces 32
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices 20
- Silicon and Solar Cell Technologies 17
- Integrated Circuits and Semiconductor Failure Analysis 14
- Thin-Film Transistor Technologies 6
- Advancements in Semiconductor Devices and Circuit Design 5
Electronic, Optical and Magnetic Materials
- Copper Interconnects and Reliability 6
Materials Chemistry
Computational Mechanics
Mechanics of Materials
- Metal and Thin Film Mechanics 6

Co-authors: A. Scorzoni I. Suni G. Soncini S. Solmi P. Negrini M.−A. Nicolet P. Ostoja M‐A. Nicolet
Cited by: Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering Electronic, Optical and Magnetic Materials
Journals: Thin Solid Films (4 papers)IEEE Transactions on Electron Devices (4 papers)Solid-State Electronics (4 papers)
Partner nations: Finland United States Italy

In The Last Decade

M. Finetti

43 papers receiving 516 citations

Peers

Countries citing papers authored by M. Finetti

Since Specialization

Citations

This map shows the geographic impact of M. Finetti's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Finetti with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Finetti more than expected).

Fields of papers citing papers by M. Finetti

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Finetti. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Finetti. The network helps show where M. Finetti may publish in the future.

Co-authorship network

The 25 scholars most cited alongside M. Finetti, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Finetti Line = papers co-authored together M. Finetti links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	A preparation technique for TEM cross-sections of test structures with reduced feature size Ultramicroscopy ·Severin Sindelar,A. Armigliato,M. Finetti	1988	4
2	Ohmic contact resistance evaluation in silicon planar structures: application to the CoSi2/n+Si interface A. Scorzoni,M. Finetti,G. Soncini,I. Suni	1987	1
3	Electrical and Structural Characterization of Electromigration in Al-Si/Ti Multilayer Interconnects European Solid-State Device Research Conference ·M. Finetti,A. Scorzoni,A. Armigliato,Severin Sindelar,I. Suni	1987	1
4	Current crowding and misalignment effects as sources of error in contact resistivity measurements—Part II: Experimental results and computer simulation of self-aligned test structures IEEE Transactions on Electron Devices ·P. Cappelletti,M. Finetti,A. Scorzoni,I. Suni,Preska Kemuel Feliks Ratuanik,백제역사문화연구원 문화유산조사부장	1987	11
5	Electron microscopy observations of N2+ -implanted TiN films as diffusion barriers for very-large-scale integration applications Thin Solid Films ·A. Armigliato,M. Finetti,S. Guerri,P. Ostoja,A. Scorzoni,Javier Garrido	1986	3
6	Comparison of Electromigration Induced Resistance Changes in Multilayer Al-Si/Ti and Al-Si/Ta Interconnects MRS Proceedings ·M. Finetti,I. Suni,K. Laskowski,L. Bacci,Janis Salmins	1986	1
7	Ion-implanted, electron-beam annealed TiN films as diffusion barriers for Al on Si shallow junctions Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·A. Armigliato,M. Finetti,Javier Garrido,S. Guerri,P. Ostoja,A. Scorzoni	1985	27
8	Monte carlo simulation of mixing of a multilayered target Radiation Effects ·A. Mazzone,M. Finetti	1985	2
9	Electromigration Resistance of Multilayer Aluminum/Titanium Interconnects MRS Proceedings ·M. Finetti,Helena Ronkainen,A.C. Zeven,I. Suni	1985	2
10	A Self-Annealing Technique for Simultaneous Titanium Silicide and N⁺/P Junction Formation MRS Proceedings ·M. Finetti,Hendrik Kos,Rocío del Pilar Mariño,G. Lulli,P. G. Merli,Roberta Nipoti,M. Vittori Antisari	1985	0
11	Ion-implanted TiN films as diffusion barriers in silicon device technology Thin Solid Films ·A. Armigliato,M. Finetti,Severin Sindelar,S. Guerri,Rocío del Pilar Mariño,P. Ostoja	1985	9
12	Contact resistivity of silicon/silicide structures formed by thin film reactions Thin Solid Films ·M. Finetti,S. Guerri,P. Negrini,A. Scorzoni,I. Suni	1985	20
13	Lateral current crowding effects on contact resistance measurements in four terminal resistor test patterns IEEE Electron Device Letters ·M. Finetti,A. Scorzoni,G. Soncini	1984	47
14	Titanium nitride as a diffusion barrier between nickel silicide and aluminum Journal of Electronic Materials ·M. Finetti,I. Suni,M‐A. Nicolet	1984	17
15	Schottky barrier height of sputtered TiN contacts on silicon Solid-State Electronics ·M. Finetti,I. Suni,M. Bartur,T.C. Banwell,M.−A. Nicolet	1984	30
16	Electrical characteristics of thin Ni2Si, NiSi, and NiSi2 layers grown on silicon Journal of Electronic Materials ·E. G. Colgan,M. Mäenpää,M. Finetti,M-A. Nicolet	1983	53
17	Influence of impurities and crystalline defects on electron mobility in heavily doped silicon Journal of Applied Physics ·M. Finetti,R. Galloni,A. M. Mazzone	1979	22
18	Minority carriers lifetime degradation during ion implanted silicon solar cell processing Revue de Physique Appliquée ·M. Finetti,P. Ostoja,S. Solmi,G. Soncini	1978	2
19	Impurity effects on conduction in heavily doped n-type silicon Journal of Applied Physics ·M. Finetti,A. M. Mazzone	1977	8
20	Temperature dependent conductivity of closely compensated phosphorus-doped silicon Philosophical magazine ·M. Finetti,A. M. Mazzone,Zijian Zhao,B. Riccò,Mauricio Rey Buitrago	1977	5

About M. Finetti

M. Finetti is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials, having authored 44 papers that have together received 597 indexed citations. Recurring topics across this work include Semiconductor materials and interfaces (32 papers), Semiconductor materials and devices (20 papers), Silicon and Solar Cell Technologies (17 papers), Integrated Circuits and Semiconductor Failure Analysis (14 papers), Copper Interconnects and Reliability (6 papers), Metal and Thin Film Mechanics (6 papers), Thin-Film Transistor Technologies (6 papers) and Advancements in Semiconductor Devices and Circuit Design (5 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (368 citations), Electrical and Electronic Engineering (509 citations) and Electronic, Optical and Magnetic Materials (50 citations). M. Finetti has collaborated with scholars based in Finland, United States and Italy. Frequent co-authors include A. Scorzoni, I. Suni, G. Soncini, S. Solmi, P. Negrini, M.−A. Nicolet, P. Ostoja, M‐A. Nicolet, M. Mäenpää and D. Nobili. Their work appears in journals such as Thin Solid Films, IEEE Transactions on Electron Devices, Solid-State Electronics, Journal of Applied Physics and Journal of Electronic Materials.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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