L. J. Chen

576 total citations
30 papers, 479 citations indexed

About

L. J. Chen is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, L. J. Chen has authored 30 papers receiving a total of 479 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 20 papers in Atomic and Molecular Physics, and Optics and 12 papers in Materials Chemistry. Recurrent topics in L. J. Chen's work include Semiconductor materials and interfaces (14 papers), Semiconductor materials and devices (8 papers) and Silicon Nanostructures and Photoluminescence (7 papers). L. J. Chen is often cited by papers focused on Semiconductor materials and interfaces (14 papers), Semiconductor materials and devices (8 papers) and Silicon Nanostructures and Photoluminescence (7 papers). L. J. Chen collaborates with scholars based in Taiwan, United States and South Korea. L. J. Chen's co-authors include H.C. Cheng, Wen‐Wei Wu, Jay Cheng, Ping‐Hung Yeh, Cheng‐Lun Hsin, Hao‐Tsai Cheng, Jr‐Hau He, Zhong Lin Wang, Yu‐Lun Chueh and Chieh-Hsiung Kuan and has published in prestigious journals such as Journal of the American Chemical Society, The Journal of Chemical Physics and Nano Letters.

In The Last Decade

L. J. Chen

29 papers receiving 468 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
L. J. Chen Taiwan	13	309	262	211	128	69	30	479
T. Sudersena Rao Canada	10	284 0.9×	187 0.7×	168 0.8×	94 0.7×	56 0.8×	39	410
L. Passari Italy	10	300 1.0×	219 0.8×	151 0.7×	91 0.7×	53 0.8×	23	479
Takashi Kouzaki Japan	11	223 0.7×	136 0.5×	177 0.8×	42 0.3×	81 1.2×	28	379
C. Doland United States	13	414 1.3×	173 0.7×	272 1.3×	53 0.4×	38 0.6×	25	554
Michael A. Capano United States	14	499 1.6×	273 1.0×	483 2.3×	94 0.7×	52 0.8×	30	853
G. Kissinger Germany	13	591 1.9×	204 0.8×	240 1.1×	108 0.8×	24 0.3×	105	677
G. J. Pietsch Germany	12	394 1.3×	340 1.3×	294 1.4×	277 2.2×	60 0.9×	17	663
J. Strane United States	9	401 1.3×	168 0.6×	209 1.0×	67 0.5×	32 0.5×	23	531
M. Hoshino Japan	13	672 2.2×	236 0.9×	131 0.6×	122 1.0×	41 0.6×	36	762
F. Fenske Germany	13	461 1.5×	139 0.5×	439 2.1×	58 0.5×	19 0.3×	38	590

Countries citing papers authored by L. J. Chen

Since Specialization

Citations

This map shows the geographic impact of L. J. Chen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. J. Chen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. J. Chen more than expected).

Fields of papers citing papers by L. J. Chen

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. J. Chen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. J. Chen. The network helps show where L. J. Chen may publish in the future.

Co-authorship network of co-authors of L. J. Chen

This figure shows the co-authorship network connecting the top 25 collaborators of L. J. Chen. A scholar is included among the top collaborators of L. J. Chen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. J. Chen. L. J. Chen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Li, Shunran, Hanfei Yan, Benjamin J. Lawrie, et al.. (2025). Spontaneous Formation of Single-Crystalline Spherulites in a Chiral 2D Hybrid Perovskite. Journal of the American Chemical Society. 147(4). 3631–3640. 2 indexed citations

Hao, Mingwei, Jonghee Yang, Wenjian Yu, et al.. (2025). Nanoscopic cross-grain cation homogenization in perovskite solar cells. Nature Nanotechnology. 20(5). 630–638. 13 indexed citations

Dung, Nguyen Duc, Nyan‐Hwa Tai, Yu‐Lun Chueh, et al.. (2011). Synthesis of ethanol-soluble few-layer graphene nanosheets for flexible and transparent conducting composite films. Nanotechnology. 22(29). 295606–295606. 48 indexed citations

Hsin, Cheng‐Lun, et al.. (2007). Er-doped silicon nanowires with 1.54μm light-emitting and enhanced electrical and field emission properties. Applied Physics Letters. 91(9). 32 indexed citations

Hsin, Cheng‐Lun, Jr‐Hau He, Wen‐Wei Wu, et al.. (2007). Lateral Self-Aligned p-Type In₂O₃ Nanowire Arrays Epitaxially Grown on Si Substrates. Nano Letters. 7(6). 1799–1803. 58 indexed citations

Liu, Cheng‐Hsien, Wen‐Wei Wu, & L. J. Chen. (2006). Collective movement of three million plus Au atoms on a silicon bicrystal. Applied Physics Letters. 88(2). 12 indexed citations

Wu, Wen‐Wei, et al.. (2006). Directed movement of Au–Si droplets towards buried dislocation networks on silicon bicrystals. Applied Physics Letters. 88(13). 14 indexed citations

Liu, Cheng‐Hsien, Wen‐Wei Wu, & L. J. Chen. (2006). Formation of Au nanoparticles on Si bicrystals. Journal of Electronic Materials. 35(1). 2–6. 3 indexed citations

Chueh, Yu‐Lun, et al.. (2005). Growth of strained Si on high-quality relaxed Si1−xGex with an intermediate Si1−yCy layer. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 23(4). 1141–1145. 3 indexed citations

10.

Tsai, M.‐J., et al.. (2003). The growth of high-quality SiGe films with an intermediate Si layer. Thin Solid Films. 447-448. 302–305. 8 indexed citations

11.

Lin, Hsin‐Hon, et al.. (2003). Ultrafast directional nickel-silicide-induced crystallization of amorphous silicon under high-density current stressing. Applied Physics Letters. 82(12). 1857–1859. 11 indexed citations

12.

Chen, L. J., et al.. (2002). Effects of low-temperature Si buffer layer thickness on the growth of SiGe by molecular beam epitaxy. Journal of Applied Physics. 92(11). 6880–6885. 33 indexed citations

13.

Chen, L. J., et al.. (2000). HIGH-TEMPERATURE LOW-CYCLE FATIGUE BEHAVIOR OF HAYNESe 230@ SUPERALLOY. 1 indexed citations

14.

Chen, L. J., et al.. (1999). Transmission electron microscope study of the dry oxidation kinetics of WSi2 on (001)Si and polycrystalline silicon. Journal of Applied Physics. 86(7). 4018–4022. 2 indexed citations

15.

Chen, L. J., et al.. (1995). Formation of amorphous interlayers by solid-state diffusion in Ti thin films on epitaxial Si–Ge layers on silicon and germanium. Journal of Applied Physics. 78(11). 6539–6542. 8 indexed citations

16.

Lei, Tan Fu, et al.. (1995). Investigation on the Distribution of Fluorine and Boron in Polycrystalline Silicon/Silicon Systems. Journal of The Electrochemical Society. 142(6). 2000–2006. 16 indexed citations

17.

Lee, C. P., et al.. (1992). Direct observation of Si delta-doped GaAs by transmission electron microscopy. Applied Physics Letters. 60(21). 2628–2630. 12 indexed citations

18.

Chen, L. J., et al.. (1986). Localized epitaxial growth of WSi2 on silicon. Journal of Applied Physics. 59(10). 3481–3488. 15 indexed citations

19.

Cheng, H.C., et al.. (1985). Localized epitaxial growth of C54 and C49 TiSi2 on (111)Si. Applied Physics Letters. 47(12). 1312–1314. 52 indexed citations

20.

Chen, L. J., et al.. (1984). Epitaxial Growth of Refractory Silicides on Silicon. MRS Proceedings. 37. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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