H. J. Lee

630 total citations
39 papers, 533 citations indexed

About

H. J. Lee is a scholar working on Condensed Matter Physics, Materials Chemistry and Electrical and Electronic Engineering. According to data from OpenAlex, H. J. Lee has authored 39 papers receiving a total of 533 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Condensed Matter Physics, 20 papers in Materials Chemistry and 18 papers in Electrical and Electronic Engineering. Recurrent topics in H. J. Lee's work include GaN-based semiconductor devices and materials (28 papers), ZnO doping and properties (14 papers) and Semiconductor Quantum Structures and Devices (13 papers). H. J. Lee is often cited by papers focused on GaN-based semiconductor devices and materials (28 papers), ZnO doping and properties (14 papers) and Semiconductor Quantum Structures and Devices (13 papers). H. J. Lee collaborates with scholars based in South Korea, United States and China. H. J. Lee's co-authors include Eun‐Kyung Suh, Chang‐Hee Hong, Yoon‐Bong Hahn, Mun Seok Jeong, E.‐K. Suh, Jeffrey O. White, Min Han, S. J. Chung, C. J. Youn and Omar H. Abd‐Elkader and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

H. J. Lee

37 papers receiving 515 citations

Peers

H. J. Lee
R. C. Tu Taiwan
U. Karrer Germany
Linda T. Romano United States
Ho Ki Kwon South Korea
Christos Thomidis United States
In-Hoon Choi South Korea
R. C. Tu Taiwan
H. J. Lee
Citations per year, relative to H. J. Lee H. J. Lee (= 1×) peers R. C. Tu

Countries citing papers authored by H. J. Lee

Since Specialization
Citations

This map shows the geographic impact of H. J. Lee's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. J. Lee with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. J. Lee more than expected).

Fields of papers citing papers by H. J. Lee

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. J. Lee. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. J. Lee. The network helps show where H. J. Lee may publish in the future.

Co-authorship network of co-authors of H. J. Lee

This figure shows the co-authorship network connecting the top 25 collaborators of H. J. Lee. A scholar is included among the top collaborators of H. J. Lee based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. J. Lee. H. J. Lee is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Zhou, Qiang, Wen‐Tse Huang, H. J. Lee, et al.. (2025). Plasmon‐Driven Reorientation of Interfacial Water for Wastewater Electrolysis with Light‐Emitting Diode Illumination. Advanced Science. 12(35). e07147–e07147.
2.
Lee, H. J. & Sooyoung Kim. (2023). Space-time block code based cooperative physical layer security schemes for LEO Satellite Systems. 554–557. 1 indexed citations
3.
Sun, Yuanping, Lihua Jin, Yong‐Hoon Cho, et al.. (2013). Optical excitation study on the efficiency droop behaviors of InGaN/GaN multiple-quantum-well structures. Applied Physics B. 114(4). 551–555. 7 indexed citations
4.
Kim, Hak Yong, et al.. (2006). Growth of low-defect AlGaN by lateral epitaxy over V-grooved sapphire substrates fabricated by wet chemical etching. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6355. 635511–635511. 1 indexed citations
5.
Kang, Dong Soo, et al.. (2004). Isoelectronic In Doping in p-GaN and its Effects on InGaN Light-Emitting Diodes. Journal of the Korean Physical Society. 45(5). 1391–1394. 1 indexed citations
6.
Ruterana, P., P. Singh, S. Kret, et al.. (2004). Quantitative evaluation of the atomic structure of defects and composition fluctuations at the nanometer scale inside InGaN/GaN heterostructures. physica status solidi (b). 241(12). 2735–2738. 4 indexed citations
7.
Kumar, Manohar, et al.. (2004). Anomalous current–voltage characteristics of InGaN/GaN light-emitting diodes depending on Mg flow rate during p-GaN growth. Semiconductor Science and Technology. 19(6). 725–727. 3 indexed citations
8.
Suh, Eun‐Kyung, et al.. (2003). Effect of well profile on optical and structural properties in InGaN/GaN quantum wells and light emitting diodes. physica status solidi (a). 200(1). 62–66. 3 indexed citations
9.
Hahn, Yoon‐Bong, et al.. (2003). Efficient blue light-emitting diodes with InGaN/GaN triangular shaped multiple quantum wells. Applied Physics Letters. 82(17). 2764–2766. 42 indexed citations
10.
Cho, Hyung Koun, et al.. (2003). Effects of Mg fluctuation on the electrical and optical properties in p‐GaN/undoped GaN layers dependent on the growth temperature. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2248–2252. 3 indexed citations
11.
Jeong, Seong-Hoon, Chang‐Hee Hong, Eun‐Kyung Suh, et al.. (2002). Influence of the quantum-well shape on the light emission characteristics of InGaN/GaN quantum-well structures and light-emitting diodes. Applied Physics Letters. 81(19). 3552–3554. 32 indexed citations
12.
Jeong, Mun Seok, Y.-W. Kim, Jeffrey O. White, et al.. (2001). Spatially resolved photoluminescence in InGaN/GaN quantum wells by near-field scanning optical microscopy. Applied Physics Letters. 79(7). 976–978. 52 indexed citations
13.
Chung, S. J., Omar H. Abd‐Elkader, Young Soon Kim, et al.. (2001). Yellow luminescence and persistent photoconductivity of undoped n-type GaN. Journal of Applied Physics. 89(10). 5454–5459. 37 indexed citations
14.
Chung, S. J., Mun Seok Jeong, Omar H. Abd‐Elkader, et al.. (2000). Optical absorption and anomalous photoconductivity in undoped n-type GaN. Applied Physics Letters. 76(8). 1021–1023. 26 indexed citations
15.
Han, Min, Guili Yang, C. J. Youn, et al.. (2000). Codoping characteristics of Zn with Mg in GaN. Applied Physics Letters. 77(8). 1123–1125. 22 indexed citations
16.
Chung, S. J., et al.. (1999). Photocurrent Spectroscopy Investigations of Mg-Related Defects Levels in p-Type GaN. MRS Proceedings. 595. 2 indexed citations
17.
Kim, Keunjoo, C. J. Youn, E.‐K. Suh, et al.. (1996). Room-temperature visible photoluminescence from silicon-rich oxide layers deposited by an electron cyclotron resonance plasma source. Applied Physics Letters. 69(25). 3908–3910. 41 indexed citations
18.
Shin, Yeong Gil, et al.. (1995). Magneto-photoluminescence of acceptors near the interfaces of AlxGa1−xAs/AlyGa1−yAs heterostructures. Journal of Applied Physics. 78(3). 1975–1979. 1 indexed citations
19.
Lee, Hyo‐Jeong, Young Hun Seo, Kee Suk Nahm, et al.. (1994). Light-emission phenomena from porous silicon: Siloxene compounds and quantum size effect. Journal of Applied Physics. 75(12). 8060–8065. 16 indexed citations
20.
Seo, Young Hun, et al.. (1993). Photoluminescence, Raman scattering, and infrared absorption studies of porous silicon. Applied Physics Letters. 62(15). 1812–1814. 32 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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