H. Heinecke

1.8k total citations
71 papers, 1.4k citations indexed

About

H. Heinecke is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, H. Heinecke has authored 71 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 58 papers in Atomic and Molecular Physics, and Optics, 58 papers in Electrical and Electronic Engineering and 18 papers in Condensed Matter Physics. Recurrent topics in H. Heinecke's work include Semiconductor Quantum Structures and Devices (58 papers), Semiconductor materials and devices (26 papers) and Semiconductor Lasers and Optical Devices (24 papers). H. Heinecke is often cited by papers focused on Semiconductor Quantum Structures and Devices (58 papers), Semiconductor materials and devices (26 papers) and Semiconductor Lasers and Optical Devices (24 papers). H. Heinecke collaborates with scholars based in Germany, Russia and Canada. H. Heinecke's co-authors include P. Balk, H. Lüth, N. Pütz, M. Weyers, M. Heyen, E. Veuhoff, R. Höger, A. Brauers, K. Werner and Oliver Kayser and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

H. Heinecke

67 papers receiving 1.3k citations

Peers

Countries citing papers authored by H. Heinecke

Since Specialization

Citations

This map shows the geographic impact of H. Heinecke's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Heinecke with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Heinecke more than expected).

Fields of papers citing papers by H. Heinecke

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Heinecke. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Heinecke. The network helps show where H. Heinecke may publish in the future.

Co-authorship network of co-authors of H. Heinecke

This figure shows the co-authorship network connecting the top 25 collaborators of H. Heinecke. A scholar is included among the top collaborators of H. Heinecke based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Heinecke. H. Heinecke is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Near-field luminescence measurements on GaInAsP/InP double heterostructures at room temperature 1998 ·Applied Optics ·(unknown), (unknown), O. Hollricher, Othmar Marti, (unknown), (unknown), H. Heinecke	2
2	Spatially resolved characterization of material composition and free carrier concentration by micro-Raman spectroscopy at surface selectively grown layers 1998 ·Journal of Crystal Growth ·W. Limmer, (unknown), (unknown), (unknown), Jochen M. Schneider, (unknown), H. Heinecke, R. Sauer	3
3	Highly carbon-doped Ga0.47In0.53As contact layers grown by using carbontetrabromide in MBE on MOVPE 1.55μm GaInAsP/InP MQW laser structures 1998 ·Journal of Crystal Growth ·Jochen M. Schneider, (unknown), (unknown), H. Heinecke	3
4	Growth of 1.55 μm DH laserstructures using TBAs and TBP in MOMBE 1997 ·Journal of Crystal Growth ·(unknown), (unknown), D. Ritter, (unknown), H. Heinecke, (unknown), E. Veuhoff	6
5	Growth of GaInAs(P) using a multiwafer MOMBE 1996 ·Journal of Crystal Growth ·(unknown), (unknown), H. Heinecke	16
6	Effect of Asi on the optical properties of Ga1−xInxAs/InP grown by molecular beam epitaxy 1995 ·Journal of Crystal Growth ·(unknown), (unknown), (unknown), (unknown), Jochen M. Schneider, (unknown), H. Heinecke	5
7	Micro-focus double-crystal X-ray diffractometry on IIl-V heterostructures grown by selective-area epitaxy 1995 ·Journal of Physics D Applied Physics ·(unknown), M. Schuster, H. Göbel, Andreas Meyer, (unknown), R. Matz, A. Snigirev, I. Snigireva, Andreas K. Freund, B. Lengeler, H. Heinecke	13
8	Novel III/V heterostructures fabricated by metalorganic molecular beam epitaxy 1994 ·Physica Scripta ·H. Heinecke, (unknown), R. Matz, (unknown), R. Primig	10
9	Surface selective growth of GaInAsP heterostructures by metalorganic MBE 1993 ·Journal of Crystal Growth ·H. Heinecke	27
10	Selective-area growth of III/V semiconductors in chemical beam epitaxy 1993 ·Semiconductor Science and Technology ·H. Heinecke, (unknown), (unknown), R. Matz	15
11	III-V crystal growth of novel layered structures using metalorganic molecular beam epitaxy 1993 ·Physica Scripta ·H. Heinecke	4
12	Growth of GaInAs(P)/InP heterostructures on nonplanar substrates using MOMBE (CBE) 1993 ·Journal of Crystal Growth ·(unknown), H. Heinecke, (unknown), (unknown)	7
13	Evaluation of III–V growth technologies for optoelectronic applications 1993 ·Materials Science and Engineering B ·H. Heinecke, E. Veuhoff	15
14	Evidence for vertical superlattices grown by surface selective growth in MOMBE (CBE) 1992 ·Journal of Crystal Growth ·H. Heinecke, (unknown), (unknown), R. Matz, (unknown), R. Höger	18
15	Potentially and challenge of metal-organic molecular beam epitaxy 1991 ·Materials Science and Engineering B ·H. Heinecke	13
16	Growth of high quality InP with metal organic molecular beam epitaxy 1990 ·Electronics Letters ·H. Heinecke, R. Höger, (unknown), (unknown)	10
17	Arsenic passivation of MOMBE grown GaAs surfaces 1988 ·Surface Science ·(unknown), A. Förster, (unknown), (unknown), K. Werner, M. Kamp, H. Heinecke, M. Weyers, H. Lüth, P. Balk	14
18	Doping of GaAs in metalorganic MBE using gaseous sources 1987 ·Journal of Crystal Growth ·H. Heinecke, K. Werner, M. Weyers, H. Lüth, P. Balk	30
19	Ultraviolet induced metal-organic chemical vapor deposition growth of GaAs 1986 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·P. Balk, H. Heinecke, N. Pütz, (unknown), H. Lüth	25
20	A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAs 1986 ·Journal of Crystal Growth ·N. Pütz, H. Heinecke, M. Heyen, P. Balk, M. Weyers, H. Lüth	155

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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