D. A. Woolf

1.3k total citations
75 papers, 1.1k citations indexed

About

D. A. Woolf is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, D. A. Woolf has authored 75 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 70 papers in Atomic and Molecular Physics, and Optics, 44 papers in Electrical and Electronic Engineering and 17 papers in Materials Chemistry. Recurrent topics in D. A. Woolf's work include Semiconductor Quantum Structures and Devices (44 papers), Semiconductor materials and devices (20 papers) and Semiconductor materials and interfaces (17 papers). D. A. Woolf is often cited by papers focused on Semiconductor Quantum Structures and Devices (44 papers), Semiconductor materials and devices (20 papers) and Semiconductor materials and interfaces (17 papers). D. A. Woolf collaborates with scholars based in United Kingdom, Germany and Italy. D. A. Woolf's co-authors include D.I. Westwood, R. H. Williams, P. Weightman, Z. Sobiesierski, J.M.C. Thornton, W. Richter, Philip Moriarty, Peter H. Beton, Dietrich R. T. Zahn and M. Henini and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

D. A. Woolf

73 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D. A. Woolf United Kingdom 21 916 626 290 161 141 75 1.1k
Masashi Ozeki Japan 20 792 0.9× 711 1.1× 299 1.0× 183 1.1× 68 0.5× 92 1.1k
M. Prietsch Germany 19 906 1.0× 600 1.0× 184 0.6× 137 0.9× 258 1.8× 40 1.1k
D.I. Westwood United Kingdom 22 1.2k 1.3× 1.0k 1.6× 373 1.3× 220 1.4× 134 1.0× 114 1.5k
A. Samsavar United States 16 777 0.8× 342 0.5× 219 0.8× 74 0.5× 208 1.5× 22 917
E. Veuhoff Germany 15 855 0.9× 925 1.5× 245 0.8× 276 1.7× 58 0.4× 43 1.1k
N. Tabatabaie United States 17 731 0.8× 606 1.0× 240 0.8× 170 1.1× 57 0.4× 37 992
H. Asonen Finland 18 666 0.7× 504 0.8× 148 0.5× 59 0.4× 150 1.1× 75 838
I. M. Vitomirov United States 18 680 0.7× 411 0.7× 216 0.7× 157 1.0× 384 2.7× 51 935
V. L. Berkovits Russia 16 648 0.7× 550 0.9× 275 0.9× 136 0.8× 121 0.9× 75 880
C. J. Karlsson Sweden 13 874 1.0× 543 0.9× 297 1.0× 89 0.6× 421 3.0× 16 1.2k

Countries citing papers authored by D. A. Woolf

Since Specialization
Citations

This map shows the geographic impact of D. A. Woolf's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. A. Woolf with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. A. Woolf more than expected).

Fields of papers citing papers by D. A. Woolf

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. A. Woolf. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. A. Woolf. The network helps show where D. A. Woolf may publish in the future.

Co-authorship network of co-authors of D. A. Woolf

This figure shows the co-authorship network connecting the top 25 collaborators of D. A. Woolf. A scholar is included among the top collaborators of D. A. Woolf based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. A. Woolf. D. A. Woolf is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
McGinley, C., A.A. Cafolla, Eilish McLoughlin, et al.. (2000). Core-level photoemission study of the BiGaAs(111)A interface. Applied Surface Science. 158(3-4). 292–300. 8 indexed citations
2.
Cafolla, A.A., C. McGinley, Eilish McLoughlin, et al.. (1997). Adsorption of Sb on GaAs(111)B studied by photoemission and low energy electron diffraction. Surface Science. 377-379. 130–134. 5 indexed citations
3.
Molloy, C.H., Kate Cooper, D. A. Woolf, et al.. (1996). Screening, band filling and band-gap renormalization in piezoelectric quantum well systems. Conference on Lasers and Electro-Optics. 473–474.
4.
Thornton, J.M.C., et al.. (1996). Development of the interface at room and low temperature. Applied Surface Science. 104-105. 234–239. 1 indexed citations
5.
Moriarty, Philip, Peter H. Beton, Yuan‐Ron Ma, et al.. (1996). (2×4)/c(2×8) to (4×2)/c(8×2) transition on GaAs(001) surfaces. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(2). 943–947. 25 indexed citations
6.
Moriarty, Philip, Peter H. Beton, M. Henini, & D. A. Woolf. (1996). Sb-induced GaAs(111)B surface reconstructions: success and failure of the electron-counting rule. Surface Science. 365(3). L663–L668. 12 indexed citations
7.
Wilks, S.P., et al.. (1994). Investigation of silicon delta-doped gallium arsenide using the Shubnikov–de Haas effect and theoretical modeling. Journal of Applied Physics. 76(6). 3583–3588. 14 indexed citations
8.
Woolf, D. A., D.I. Westwood, & R. H. Williams. (1993). The homoepitaxial growth of GaAs(111)A and (111)B by molecular beam epitaxy: an investigation of the temperature-dependent surface reconstructions and bulk electrical conductivity transitions. Semiconductor Science and Technology. 8(6). 1075–1081. 34 indexed citations
9.
Rossów, U., N. Esser, Th. Müller, et al.. (1993). Growth mode of ultrathin Sb layers on Si studied by spectroscopic ellipsometry and Raman scattering. Applied Surface Science. 63(1-4). 35–39. 24 indexed citations
10.
Hooper, S. E., D.I. Westwood, D. A. Woolf, & R. H. Williams. (1993). The molecular beam epitaxial growth of InAs on GaAs(111)B and (100) oriented substrates; a comparative growth study. Journal of Crystal Growth. 127(1-4). 918–921. 6 indexed citations
11.
Woolf, D. A., et al.. (1993). The homoepitaxial growth of on-axis GaAs(111)A, (111)B and (201) compared with GaAs(100): doping and growth temperature studies. Journal of Crystal Growth. 127(1-4). 913–917. 14 indexed citations
12.
Westwood, D.I. & D. A. Woolf. (1993). Residual strain measurements in thick InxGa1−xAs layers grown on GaAs (100) by molecular beam epitaxy. Journal of Applied Physics. 73(3). 1187–1192. 20 indexed citations
13.
Sobiesierski, Z., D. A. Woolf, D.I. Westwood, A. Frova, & C. Coluzza. (1992). Creation of radiative hydrogen-related states within strained InxGa1-xAs/GaAs quantum wells by hydrogenation. Solid State Communications. 81(1). 125–128. 11 indexed citations
14.
Wang, Jiannong, J. W. Steeds, & D. A. Woolf. (1992). The study of misfit dislocations in InxGa1-xAs/GaAs strained quantum well structures. Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 65(4). 829–839. 17 indexed citations
15.
Sobiesierski, Z., D. A. Woolf, & D.I. Westwood. (1992). Incorporation of H into Inx Ga1−x As / GaAs quantum wells: Optical spectroscopy of H-related radiative states. Superlattices and Microstructures. 12(2). 261–265. 2 indexed citations
16.
Kelly, P.V., Zhexiong Tang, D. A. Woolf, R. H. Williams, & J. F. McGilp. (1991). Optical second harmonic generation from Si(111)1 × 1-As and Si(100)2 × 1-As. Surface Science. 251-252. 87–91. 32 indexed citations
17.
Richter, W., U. Rossów, Dietrich R. T. Zahn, et al.. (1991). Vibrational properties of arsenic on Si(111). Surface Science. 251-252. 556–560. 14 indexed citations
18.
Woolf, D. A., D.I. Westwood, & R. H. Williams. (1991). The molecular beam epitaxial growth of GaAs on Si(100): a variable growth temperature study. Journal of Crystal Growth. 108(1-2). 25–32. 8 indexed citations
19.
Westwood, D.I., D. A. Woolf, & R. H. Williams. (1989). Growth of In Ga1− As on GaAs (001) by molecular beam epitaxy. Journal of Crystal Growth. 98(4). 782–792. 54 indexed citations
20.
Eickhoff, T., Dietrich R. T. Zahn, W. Richter, et al.. (1989). MBE Grown GaAs on Si(100) Studied by Infrared Spectroscopy. MRS Proceedings. 160. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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