R. Höger

483 total citations
17 papers, 392 citations indexed

About

R. Höger is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, R. Höger has authored 17 papers receiving a total of 392 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Atomic and Molecular Physics, and Optics, 13 papers in Electrical and Electronic Engineering and 3 papers in Materials Chemistry. Recurrent topics in R. Höger's work include Semiconductor Quantum Structures and Devices (15 papers), Semiconductor Lasers and Optical Devices (7 papers) and Advanced Semiconductor Detectors and Materials (5 papers). R. Höger is often cited by papers focused on Semiconductor Quantum Structures and Devices (15 papers), Semiconductor Lasers and Optical Devices (7 papers) and Advanced Semiconductor Detectors and Materials (5 papers). R. Höger collaborates with scholars based in Germany and Russia. R. Höger's co-authors include H. Heinecke, H. Riechert, J.P. Reithmaier, E. O. Göbel, G. Abstreiter, J. Kühl, G. Weimann, A. P. Heberle, B. Jobst and K. Ploog and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

R. Höger

17 papers receiving 371 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. Höger Germany 13 354 285 90 35 26 17 392
D. Darby United Kingdom 8 360 1.0× 406 1.4× 41 0.5× 27 0.8× 18 0.7× 17 443
Kiichi Nakashima Japan 11 280 0.8× 264 0.9× 68 0.8× 29 0.8× 19 0.7× 27 328
T. Ohata Japan 11 398 1.1× 443 1.6× 212 2.4× 82 2.3× 22 0.8× 17 513
Y. Lansari United States 13 324 0.9× 326 1.1× 129 1.4× 32 0.9× 8 0.3× 34 395
K. Schüll Germany 11 318 0.9× 326 1.1× 177 2.0× 63 1.8× 21 0.8× 26 418
V. V. Ovsyankin Russia 10 217 0.6× 143 0.5× 147 1.6× 11 0.3× 31 1.2× 34 325
P.I. Kuindersma Netherlands 12 351 1.0× 504 1.8× 57 0.6× 31 0.9× 21 0.8× 38 568
W. Kühn Germany 14 372 1.1× 459 1.6× 284 3.2× 34 1.0× 21 0.8× 34 529
J.C. Bouley France 11 248 0.7× 345 1.2× 71 0.8× 33 0.9× 13 0.5× 29 368
K. Kanamoto Japan 11 329 0.9× 277 1.0× 95 1.1× 33 0.9× 45 1.7× 24 376

Countries citing papers authored by R. Höger

Since Specialization
Citations

This map shows the geographic impact of R. Höger's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Höger with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Höger more than expected).

Fields of papers citing papers by R. Höger

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Höger. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Höger. The network helps show where R. Höger may publish in the future.

Co-authorship network of co-authors of R. Höger

This figure shows the co-authorship network connecting the top 25 collaborators of R. Höger. A scholar is included among the top collaborators of R. Höger based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Höger. R. Höger is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

17 of 17 papers shown
1.
Heinecke, H., et al.. (1992). Evidence for vertical superlattices grown by surface selective growth in MOMBE (CBE). Journal of Crystal Growth. 124(1-4). 186–191. 18 indexed citations
2.
Heinecke, H., et al.. (1992). Selective area epitaxy of InP/GaInAsP heterostructures by MOMBE. Journal of Crystal Growth. 120(1-4). 376–381. 28 indexed citations
3.
Heinecke, H., et al.. (1992). Effect of surface orientation on GaInAsP material composition in MOMBE (CBE). Journal of Crystal Growth. 124(1-4). 170–175. 30 indexed citations
4.
Heinecke, H., et al.. (1991). On the growth of GaInAs by MOMBE (CBE). Journal of Crystal Growth. 107(1-4). 1062–1064. 8 indexed citations
5.
Reithmaier, J.P., R. Höger, & H. Riechert. (1991). Experimental evidence for the transition from two- to three-dimensional behavior of excitons in quantum-well structures. Physical review. B, Condensed matter. 43(6). 4933–4938. 38 indexed citations
6.
Heinecke, H., et al.. (1991). Growth of GaInAs and GaInAsP lattice matched to InP by metalorganic MBE. Journal of Crystal Growth. 111(1-4). 599–604. 18 indexed citations
7.
Reithmaier, J.P., R. Höger, H. Riechert, et al.. (1990). Band offset in elastically strained InGaAs/GaAs multiple quantum wells determined by optical absorption and electronic Raman scattering. Applied Physics Letters. 56(6). 536–538. 71 indexed citations
8.
Heinecke, H., et al.. (1990). Growth of high quality InP with metal organic molecular beam epitaxy. Electronics Letters. 26(3). 213–214. 10 indexed citations
9.
Reithmaier, Johann Peter, et al.. (1990). Confinement of light hole valence-band states in pseudomorphic InGaAs/Ga(Al)As quantum wells. Applied Physics Letters. 57(10). 957–959. 16 indexed citations
10.
Heinecke, H., et al.. (1990). Growth of high purity InP by metalorganic MBE (CBE). Journal of Crystal Growth. 105(1-4). 143–148. 53 indexed citations
11.
Satzke, K., G. Weiser, R. Höger, & W. Thulke. (1988). Absorption and electroabsorption spectra of an In1−xGaxP1−yAsy/InP double heterostructure. Journal of Applied Physics. 63(11). 5485–5490. 22 indexed citations
12.
Göbel, E. O., J. Kühl, & R. Höger. (1985). Short pulse physics of quantum well structures. Journal of Luminescence. 30(1-4). 541–550. 27 indexed citations
13.
Göbel, E. O., R. Höger, J. Kühl, H.-J. Polland, & K. Ploog. (1985). Homogeneous gain saturation in GaAs/AlGaAs quantum well lasers. Applied Physics Letters. 47(8). 781–783. 23 indexed citations
14.
Polland, H.-J., Yoshiji Horíkoshi, R. Höger, et al.. (1985). Influence of electric fields on the hot carrier kinetics in AlGaAs/GaAs quantum wells. Physica B+C. 134(1-3). 412–416. 5 indexed citations
15.
Höger, R., et al.. (1984). Kinetics of free and bound excitons in GaAs/AlGaAs double heterostructures. Journal of Physics C Solid State Physics. 17(34). L905–L910. 12 indexed citations
16.
Keßler, A. & R. Höger. (1982). A TSC investigation of K2ZnF4 and KZnF3. Materials Research Bulletin. 17(9). 1141–1145. 1 indexed citations
17.
Keßler, A., R. Höger, & I. V. Murin. (1981). Ion transport in LaF3 at low temperatures. Materials Research Bulletin. 16(9). 1185–1188. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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