G. Dingemans

3.3k citations

49 papers · 2.9k indexed · 1 hit paper · h-index 23

Co-authors: W. M. M. Kessels M. C. M. van de Sanden N. M. Terlinden W. Beyer P. Engelhart R. Seguin Dieter Pierreux W. Keuning
Topics: Silicon and Solar Cell Technologies (35 papers)Semiconductor materials and devices (29 papers)Silicon Nanostructures and Photoluminescence (23 papers)
Cited by: Electrical and Electronic Engineering Materials Chemistry Atomic and Molecular Physics, and Optics
Journals: Applied Physics Letters Journal of Applied Physics Journal of The Electrochemical Society
Partner nations: Netherlands Germany Belgium

In The Last Decade

G. Dingemans

49 papers receiving 2.8k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells

2012 665 citations G. Dingemans, W. M. M. Kessels Journal of Vacuum Science & Technology A Vacuum Surfaces and Films profile →

Peers

Countries citing papers authored by G. Dingemans

Since Specialization

Citations

This map shows the geographic impact of G. Dingemans's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Dingemans with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Dingemans more than expected).

Fields of papers citing papers by G. Dingemans

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Dingemans. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Dingemans. The network helps show where G. Dingemans may publish in the future.

Co-authorship network of co-authors of G. Dingemans

This figure shows the co-authorship network connecting the top 25 collaborators of G. Dingemans. A scholar is included among the top collaborators of G. Dingemans based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Dingemans. G. Dingemans is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Dielectric Passivation Schemes for High Efficiency n-Type c-Si Solar Cells 2013 ·EU PVSEC ·(unknown),I.G. Romijn,I. Cesar,M.W.P.E. Lamers,A. Gutjahr,G. Dingemans,Harm C. M. Knoops,(unknown),W. M. M. Kessels,(unknown),(unknown),(unknown),D. M. Borsa,(unknown),A.H.G. Vlooswijk	2
2	Passivation of n$^{+}$-Type Si Surfaces by Low Temperature Processed SiO$_{2}$/Al$_{2}$O$_{3}$ Stacks 2013 ·IEEE Journal of Photovoltaics ·Stefan Bordihn,G. Dingemans,Verena Mertens,Jörg Müller,W. M. M. Kessels	13
3	Alternative technology concepts for low-cost and high-speed 2D and 3D interconnect manufacturing 2013 ·IMAPSource Proceedings ·F. Roozeboom,(unknown),(unknown),(unknown),G. Dingemans,W. Keuning,W. M. M. Kessels,Ralph Pohl,A.J. Huis in’t Veld	1
4	Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor 2012 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Stephen E. Potts,G. Dingemans,(unknown),W. M. M. Kessels	71
5	Thermal effusion measurements: Probing hydrogen in surface passivation schemes 2012 ·G. Dingemans,W. Beyer,W. M. M. Kessels	1
6	Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO₂ 2011 ·ECS Transactions ·G. Dingemans,(unknown),M. C. M. van de Sanden,W. M. M. Kessels	52
7	Nanolayer surface passivation schemes for silicon solar cells 2011 ·Data Archiving and Networked Services (DANS) ·G. Dingemans	6
8	Influence of the Deposition Temperature on the c-Si Surface Passivation by Al[sub 2]O[sub 3] Films Synthesized by ALD and PECVD 2010 ·Electrochemical and Solid-State Letters ·G. Dingemans,M. C. M. van de Sanden,W. M. M. Kessels	191
9	Comparison between aluminum oxide surface passivation films deposited with thermal ALD, plasma ALD and PECVD 2010 ·TU/e Research Portal ·G. Dingemans,P. Engelhart,R. Seguin,M. M. Mandoc,M. C. M. van de Sanden,W. M. M. Kessels	15
10	Excellent Si surface passivation by low temperature SiO₂ using an ultrathin Al₂O₃ capping film 2010 ·physica status solidi (RRL) - Rapid Research Letters ·G. Dingemans,M. C. M. van de Sanden,W. M. M. Kessels	82
11	Recent Progress in the Development and Understanding of Silicon Surface Passivation by Aluminum Oxide for Photovoltaics 2010 ·Data Archiving and Networked Services (DANS) ·G. Dingemans,(unknown)	15
12	Role of field-effect on c-Si surface passivation by ultrathin (2–20 nm) atomic layer deposited Al2O3 2010 ·Applied Physics Letters ·N. M. Terlinden,G. Dingemans,M. C. M. van de Sanden,W. M. M. Kessels	120
13	Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks 2010 ·Applied Physics Letters ·G. Dingemans,W. Beyer,M. C. M. van de Sanden,W. M. M. Kessels	159
14	Comparison between Al2O3 surface passivation films deposited with thermal ALD, plasma ALD and PECVD 2010 ·Data Archiving and Networked Services (DANS) ·G. Dingemans,P. Engelhart,R. Seguin,(unknown),M. C. M. van de Sanden,(unknown)	2
15	Firing stability of atomic layer deposited Al<inf>2</inf>O<inf>3</inf> for c-Si surface passivation 2009 ·TU/e Research Portal ·G. Dingemans,P. Engelhart,R. Seguin,Bram Hoex,M. C. M. van de Sanden,W. M. M. Kessels	13
16	High-Efficiency n-Type Silicon Solar Cells with Front Side Boron Emitter 2009 ·Fraunhofer-Publica (Fraunhofer-Gesellschaft) ·Jan Benick,Bram Hoex,G. Dingemans,(unknown),Α. Richter,Martin Hermle,(unknown)	44
17	Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films 2009 ·ECS Transactions ·Stephen E. Potts,(unknown),G. Dingemans,E. Langereis,W. Keuning,M. C. M. van de Sanden,W. M. M. Kessels	3
18	The atomic hydrogen flux to silicon growth flux ratio during microcrystalline silicon solar cell deposition 2008 ·Applied Physics Letters ·G. Dingemans,M.N. van den Donker,D. Hrunski,A. Gordijn,W. M. M. Kessels,M. C. M. van de Sanden	37
19	In situ film transmittance using the plasma as light source: a case study of thin silicon film deposition in the microcrystalline growth regime 2007 ·RWTH Publications (RWTH Aachen) ·G. Dingemans,(unknown),D. Hrunski,A. Gordijn,(unknown),M. C. M. van de Sanden	1
20	IN SITU IR OPTICAL MEASUREMENTS OF GAS PROPERTIES IN A CAPACITIVELY COUPLED RF Ar/SiH4 PLASMA 2005 ·High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes ·(unknown),G. Dingemans,W. W. Stoffels,G. M. W. Kroesen	1

About G. Dingemans

G. Dingemans is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Ceramics and Composites, having authored 49 papers that have together received 2.9k indexed citations. Recurring topics across this work include Silicon and Solar Cell Technologies (35 papers), Semiconductor materials and devices (29 papers) and Silicon Nanostructures and Photoluminescence (23 papers). The work is most often cited by research in Electrical and Electronic Engineering (2.7k citations), Materials Chemistry (1.3k citations) and Atomic and Molecular Physics, and Optics (749 citations). G. Dingemans has collaborated with scholars based in Netherlands, Germany and Belgium. Frequent co-authors include W. M. M. Kessels, M. C. M. van de Sanden, N. M. Terlinden, W. Beyer, P. Engelhart, R. Seguin, Dieter Pierreux, W. Keuning, F. Einsele and Stephen E. Potts. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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