F.‐G. Kirscht

657 total citations
42 papers, 499 citations indexed

About

F.‐G. Kirscht is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, F.‐G. Kirscht has authored 42 papers receiving a total of 499 indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Electrical and Electronic Engineering, 19 papers in Atomic and Molecular Physics, and Optics and 18 papers in Materials Chemistry. Recurrent topics in F.‐G. Kirscht's work include Silicon and Solar Cell Technologies (30 papers), Semiconductor materials and interfaces (18 papers) and Thin-Film Transistor Technologies (12 papers). F.‐G. Kirscht is often cited by papers focused on Silicon and Solar Cell Technologies (30 papers), Semiconductor materials and interfaces (18 papers) and Thin-Film Transistor Technologies (12 papers). F.‐G. Kirscht collaborates with scholars based in Germany, Japan and United States. F.‐G. Kirscht's co-authors include Chang‐Wook Baek, Yury Gogotsi, K. Schmalz, K. Tittelbach‐Helmrich, Erzsébet Hild, Hans Richter, A. Buczkowski, Mohammad Bagher Shabani, H. Klose and Y. Shimanuki and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and Thin Solid Films.

In The Last Decade

F.‐G. Kirscht

37 papers receiving 444 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F.‐G. Kirscht Germany 11 353 210 186 166 59 42 499
U. Lambert Germany 12 349 1.0× 167 0.8× 82 0.4× 133 0.8× 22 0.4× 34 454
M. Hopstaken Netherlands 15 478 1.4× 145 0.7× 49 0.3× 154 0.9× 71 1.2× 38 541
D. Nobili Italy 19 824 2.3× 389 1.9× 89 0.5× 459 2.8× 120 2.0× 45 980
N.M. Kazuchits Belarus 11 244 0.7× 376 1.8× 192 1.0× 84 0.5× 27 0.5× 41 430
M. Italia Italy 12 430 1.2× 133 0.6× 135 0.7× 124 0.7× 118 2.0× 36 499
A.M. Papon France 11 468 1.3× 122 0.6× 119 0.6× 102 0.6× 61 1.0× 25 522
W. K. Tice United States 10 556 1.6× 223 1.1× 113 0.6× 191 1.2× 41 0.7× 21 640
Oleg Kononchuk France 13 401 1.1× 126 0.6× 68 0.4× 145 0.9× 111 1.9× 75 490
G. Regula France 12 344 1.0× 181 0.9× 80 0.4× 105 0.6× 24 0.4× 58 438
Tomonobu Hata Japan 13 237 0.7× 297 1.4× 137 0.7× 56 0.3× 27 0.5× 60 449

Countries citing papers authored by F.‐G. Kirscht

Since Specialization
Citations

This map shows the geographic impact of F.‐G. Kirscht's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F.‐G. Kirscht with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F.‐G. Kirscht more than expected).

Fields of papers citing papers by F.‐G. Kirscht

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F.‐G. Kirscht. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F.‐G. Kirscht. The network helps show where F.‐G. Kirscht may publish in the future.

Co-authorship network of co-authors of F.‐G. Kirscht

This figure shows the co-authorship network connecting the top 25 collaborators of F.‐G. Kirscht. A scholar is included among the top collaborators of F.‐G. Kirscht based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F.‐G. Kirscht. F.‐G. Kirscht is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Bartel, T., et al.. (2013). Silicon Ingot Quality and Resulting Solar Cell Performance. Energy Procedia. 38. 551–560. 5 indexed citations
2.
Bartel, T., Kevin Lauer, M. Heuer, et al.. (2012). The Effect of Al and Fe Doping on Solar Cells Made from Compensated Silicon. Energy Procedia. 27. 45–52. 9 indexed citations
3.
Riemann, H., et al.. (2011). Float zone (FZ) silicon: A potential material for advanced commercial solar cells?. Crystal Research and Technology. 47(3). 273–278. 3 indexed citations
4.
Rudolph, P., et al.. (2010). The use of heater-magnet module for Czochralski growth of PV silicon crystals with quadratic cross section. Journal of Crystal Growth. 318(1). 249–254. 18 indexed citations
5.
Naumann, M. & F.‐G. Kirscht. (2005). Investigation of defect structures in multi-crystalline silicon by laser scattering tomography. Thin Solid Films. 487(1-2). 188–192. 2 indexed citations
6.
Buczkowski, A., et al.. (2003). Photoluminescence Intensity Analysis in Application to Contactless Characterization of Silicon Wafers. Journal of The Electrochemical Society. 150(8). G436–G436. 14 indexed citations
7.
Shabani, Mohammad Bagher, et al.. (2001). Iron Solubility in Boron-Doped Silicon and Fe Gettering Mechanism in p/p<sup>+</sup> Epitaxial Wafers. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 82-84. 331–340. 4 indexed citations
8.
Schroder, D.K., et al.. (2001). Silicon Epitaxial Layer Lifetime Characterization. Journal of The Electrochemical Society. 148(8). G411–G411. 17 indexed citations
9.
Gogotsi, Yury, Chang‐Wook Baek, & F.‐G. Kirscht. (1999). Raman microspectroscopy study of processing-induced phase transformations and residual stress in silicon. Semiconductor Science and Technology. 14(10). 936–944. 190 indexed citations
10.
Kirscht, F.‐G., et al.. (1997). Strain and Gettering in Epitaxial Silicon Wafers. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 57-58. 355–364. 2 indexed citations
11.
Seifert, W., M. Kittler, Jan Vanhellemont, et al.. (1996). Recombination activity of oxygen precipitation related defects in Si. 2 indexed citations
12.
Kirscht, F.‐G., et al.. (1989). Volume Defect Formation in CZ SI Wafers and Related Electrical Effects. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 6-7. 103–110.
13.
Schmalz, K., F.‐G. Kirscht, & K. Tittelbach‐Helmrich. (1988). DLTS study of deep level defects in Cz n-Si due to heat treatment at 600 to 900 °C. physica status solidi (a). 109(1). 279–294. 15 indexed citations
14.
Schmalz, K., F.‐G. Kirscht, S. Niese, et al.. (1987). On the intrinsic gettering in Fe-contaminated CzSi. physica status solidi (a). 100(1). 69–85. 7 indexed citations
15.
Kirscht, F.‐G., В. И. Никитенко, Hans Richter, É. A. Steinman, & E. B. Yakimov. (1986). Photoluminescence of Preannealed Plastically Deformed Silicon Crystals. physica status solidi (a). 93(2). K143–K146. 2 indexed citations
16.
Schmalz, K., P. Gaworzewski, & F.‐G. Kirscht. (1984). Deep Levels in Czochralski p-Si Due to Heat Treatment at 600 to 900 °C. physica status solidi (a). 81(2). K165–K169. 7 indexed citations
17.
Kirscht, F.‐G., David J. Tanzer, & C. Hänsch. (1982). Thermomechanical Behaviour of Stress-Reduced Silicon Wafers. physica status solidi (a). 74(1). K1–K3. 3 indexed citations
18.
Kirscht, F.‐G., et al.. (1981). Differences in plastic deformation behaviour of CZ- and FZ-grown silicon crystals. physica status solidi (a). 64(1). K85–K88. 5 indexed citations
19.
Kirscht, F.‐G., et al.. (1980). The dislocation structure of plastically deformed silicon with different sample orientation. physica status solidi (a). 58(1). K5–K6. 1 indexed citations
20.
Richter, Hans, et al.. (1975). Ritzuntersuchungen an Siliziumeinkristallen. Kristall und Technik. 10(12). 1231–1237. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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