U. Lambert

584 total citations
34 papers, 454 citations indexed

About

U. Lambert is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, U. Lambert has authored 34 papers receiving a total of 454 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 12 papers in Materials Chemistry and 8 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in U. Lambert's work include Silicon and Solar Cell Technologies (23 papers), Thin-Film Transistor Technologies (10 papers) and Semiconductor materials and devices (10 papers). U. Lambert is often cited by papers focused on Silicon and Solar Cell Technologies (23 papers), Thin-Film Transistor Technologies (10 papers) and Semiconductor materials and devices (10 papers). U. Lambert collaborates with scholars based in Germany, Belgium and Austria. U. Lambert's co-authors include D. Gräf, Wilfried von Ammon, Otwin Breitenstein, Peter Wagner, G. Kissinger, M. Suhren, W. Eysel, Andreas Huber, L. Jan Anton Koster and E. Dornberger and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

U. Lambert

32 papers receiving 403 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
U. Lambert Germany	12	349	167	133	82	59	34	454
J. M. Blum United States	11	248 0.7×	136 0.8×	164 1.2×	65 0.8×	35 0.6×	23	368
J.P. Lu United States	13	244 0.7×	240 1.4×	240 1.8×	73 0.9×	38 0.6×	31	518
N. Shaw United Kingdom	14	239 0.7×	130 0.8×	134 1.0×	74 0.9×	40 0.7×	39	405
N. Chiţică Sweden	14	369 1.1×	136 0.8×	174 1.3×	55 0.7×	113 1.9×	38	509
P. Geittner Germany	10	253 0.7×	151 0.9×	91 0.7×	53 0.6×	64 1.1×	27	412
M. Texier France	12	223 0.6×	165 1.0×	119 0.9×	90 1.1×	38 0.6×	39	359
T. Tanifuji Japan	14	273 0.8×	269 1.6×	68 0.5×	55 0.7×	63 1.1×	55	532
J. Zesch United States	11	378 1.1×	305 1.8×	87 0.7×	78 1.0×	32 0.5×	19	473
K. Eisele Germany	8	401 1.1×	273 1.6×	137 1.0×	93 1.1×	33 0.6×	23	489
Elisa García‐Tabarés Spain	11	266 0.8×	93 0.6×	135 1.0×	90 1.1×	50 0.8×	33	387

Countries citing papers authored by U. Lambert

Since Specialization

Citations

This map shows the geographic impact of U. Lambert's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by U. Lambert with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites U. Lambert more than expected).

Fields of papers citing papers by U. Lambert

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by U. Lambert. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by U. Lambert. The network helps show where U. Lambert may publish in the future.

Co-authorship network of co-authors of U. Lambert

This figure shows the co-authorship network connecting the top 25 collaborators of U. Lambert. A scholar is included among the top collaborators of U. Lambert based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with U. Lambert. U. Lambert is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Lambert, U., et al.. (2023). Ultra-wideband Metamaterial-based Rectangular Microstrip Antenna for Sub-6 GHz 5G and other Microwave Applications. Journal of Engineering Research and Reports. 25(7). 1–10.

Kissinger, G., et al.. (2006). A contribution to oxide precipitate nucleation in nitrogen doped silicon. physica status solidi (a). 203(4). 677–684. 4 indexed citations

Breitenstein, Otwin, et al.. (2001). Lock-In IR-Thermography – A Novel Tool for Material and Device Characterization. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 82-84. 741–746. 58 indexed citations

Breitenstein, Otwin, et al.. (2001). Imaging of the lateral GOI-defect distribution in silicon MOS wafers with lock-in IR-thermography. Materials Science in Semiconductor Processing. 4(1-3). 39–42. 1 indexed citations

Fischer, A., et al.. (2001). Upper yield point of large diameter silicon. Microelectronic Engineering. 56(1-2). 117–122. 16 indexed citations

Müssig, H.‐J., et al.. (2001). Can Si(113) wafers be an alternative to Si(001)?. Microelectronic Engineering. 56(1-2). 195–203. 17 indexed citations

Breitenstein, Otwin, et al.. (2000). Localization of gate oxide integrity defects in silicon metal-oxide-semiconductor structures with lock-in IR thermography. Journal of Applied Physics. 88(7). 4000–4003. 42 indexed citations

Kissinger, G., Jan Vanhellemont, U. Lambert, D. Gräf, & H. Richter. (1999). Uniform precipitation of oxygen in large diameter wafers. Microelectronic Engineering. 45(2-3). 155–160. 1 indexed citations

Gräf, D., et al.. (1998). Characterization of Crystal Quality by Crystal Originated Particle Delineation and the Impact on the Silicon Wafer Surface. Journal of The Electrochemical Society. 145(1). 275–284. 34 indexed citations

10.

Kissinger, G., Jan Vanhellemont, U. Lambert, et al.. (1998). Influence of Residual Point Defect Supersaturation on the Formation of Grown‐In Oxide Precipitate Nuclei in CZ‐Si. Journal of The Electrochemical Society. 145(5). L75–L78. 10 indexed citations

11.

Kissinger, G., G. Morgenstern, Jan Vanhellemont, et al.. (1998). Internal oxidation of vacancy agglomerates in Czochralski silicon wafers during high-temperature anneals. Applied Physics Letters. 72(2). 223–225. 7 indexed citations

12.

Schmidt, Thomas M., et al.. (1998). Effect of Thermal Diffuse Scattering in Triple-Crystal Diffractometry with High-Energy Synchrotron Radiation. Journal of Applied Crystallography. 31(4). 625–633. 5 indexed citations

13.

Kissinger, G., D. Gräf, U. Lambert, T. Grabolla, & Hans Richter. (1997). Key influence of the thermal history on process-induced defects in Czochralski silicon wafers. Semiconductor Science and Technology. 12(7). 933–937. 17 indexed citations

14.

Kissinger, G., D. Gräf, Jan Vanhellemont, U. Lambert, & Hans Richter. (1997). The Role of Grown-in Defects in Advanced Silicon Technology. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 57-58. 337–342. 1 indexed citations

15.

Dornberger, E., D. Gräf, M. Suhren, et al.. (1997). Influence of boron concentration on the oxidation-induced stacking fault ring in Czochralski silicon crystals. Journal of Crystal Growth. 180(3-4). 343–352. 56 indexed citations

16.

Gräf, D., et al.. (1996). Comparison of high temperature annealed Czochralski silicon wafers and epitaxial wafers. Materials Science and Engineering B. 36(1-3). 50–54. 10 indexed citations

17.

Lambert, U., et al.. (1994). Advanced arsenic purification and GaAs synthesis for improved reproducible growth of undoped semi-insulating GaAs. Journal of Crystal Growth. 142(1-2). 37–48. 9 indexed citations

18.

Lambert, U. & W. Eysel. (1986). New Copper (II) — Rare Earth (III) Compounds I. Ternary Systems CuO-M ₂ O ₃ -TO ₂. Powder Diffraction. 1(2). 45–50. 11 indexed citations

19.

Lambert, U. & W. Eysel. (1986). New Copper (II) — Rare Earth (III) Compounds II. Crystal Chemistry of CuLn ₂ Ge ₂ O ₈ , CuLn ₂ Si ₄ O ₁₂ and CuLn ₂ Ge ₄ O ₁₂. Powder Diffraction. 1(3). 256–260. 10 indexed citations

20.

Eysel, W., Klaus Breuer, & U. Lambert. (1984). Crystal chemistry of oxygen coordinated Cu²⁺. Acta Crystallographica Section A Foundations of Crystallography. 40(a1). C209–C209. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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