A. Heft

695 total citations
25 papers, 595 citations indexed

About

A. Heft is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Computational Mechanics. According to data from OpenAlex, A. Heft has authored 25 papers receiving a total of 595 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 11 papers in Materials Chemistry and 3 papers in Computational Mechanics. Recurrent topics in A. Heft's work include Semiconductor materials and devices (9 papers), ZnO doping and properties (7 papers) and Silicon Carbide Semiconductor Technologies (7 papers). A. Heft is often cited by papers focused on Semiconductor materials and devices (9 papers), ZnO doping and properties (7 papers) and Silicon Carbide Semiconductor Technologies (7 papers). A. Heft collaborates with scholars based in Germany, Slovakia and Italy. A. Heft's co-authors include W. Wesch, E. Wendler, E. Glaser, T. Bachmann, Andreas Pfuch, J. Heindl, H. P. Strunk, K.-D. Lang, A. Schimanski and Heinrich Lang and has published in prestigious journals such as RSC Advances, Solar Energy Materials and Solar Cells and Thin Solid Films.

In The Last Decade

A. Heft

24 papers receiving 585 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Heft Germany 15 423 224 127 124 49 25 595
Paul R. Ehrmann United States 10 203 0.5× 285 1.3× 201 1.6× 82 0.7× 74 1.5× 17 445
Michel Cathelinaud France 15 562 1.3× 454 2.0× 25 0.2× 50 0.4× 64 1.3× 45 665
M. A. Fardad Canada 12 260 0.6× 184 0.8× 62 0.5× 32 0.3× 75 1.5× 24 475
G.G. Tepehan Türkiye 14 318 0.8× 350 1.6× 23 0.2× 22 0.2× 36 0.7× 39 602
Ann Rose Abraham India 11 195 0.5× 303 1.4× 46 0.4× 21 0.2× 66 1.3× 46 443
Din-Guo Chen United States 4 211 0.5× 183 0.8× 23 0.2× 31 0.3× 64 1.3× 6 462
G. Beshkov Bulgaria 11 240 0.6× 254 1.1× 14 0.1× 31 0.3× 59 1.2× 49 406
G. Zatryb Poland 17 388 0.9× 580 2.6× 26 0.2× 26 0.2× 177 3.6× 37 629
Haruo Yokomichi Japan 14 386 0.9× 534 2.4× 37 0.3× 18 0.1× 62 1.3× 49 620
Xinguang Xu China 15 269 0.6× 272 1.2× 43 0.3× 16 0.1× 108 2.2× 42 604

Countries citing papers authored by A. Heft

Since Specialization
Citations

This map shows the geographic impact of A. Heft's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Heft with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Heft more than expected).

Fields of papers citing papers by A. Heft

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Heft. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Heft. The network helps show where A. Heft may publish in the future.

Co-authorship network of co-authors of A. Heft

This figure shows the co-authorship network connecting the top 25 collaborators of A. Heft. A scholar is included among the top collaborators of A. Heft based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Heft. A. Heft is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wendler, E., et al.. (2019). Comprehensive porosity determination of combustion-deposited SiOx thin films and correlation with FTIR signal. Surface and Coatings Technology. 375. 256–265. 1 indexed citations
3.
Wolf, Stefaan De, et al.. (2014). Structural properties of zinc oxide deposited using atmospheric pressure combustion chemical vapour deposition. Thin Solid Films. 565. 45–53. 8 indexed citations
4.
Heft, A., et al.. (2013). Characterisation of thin SiOx-layers on float glass deposited by Combustion Chemical Vapour Deposition (C-CVD). Surface and Coatings Technology. 232. 582–586. 4 indexed citations
5.
Heft, A., et al.. (2013). Characterization of corrosion effects on float glass coated by CCVD. Surface and Coatings Technology. 232. 742–746. 3 indexed citations
6.
Heft, A., et al.. (2012). Conductive zinc oxide thin film coatings by combustion chemical vapour deposition at atmospheric pressure. Thin Solid Films. 532. 50–55. 21 indexed citations
8.
Liebert, Tim, et al.. (2011). Pure, Transparent‐Melting Starch Esters: Synthesis and Characterization. Macromolecular Rapid Communications. 32(17). 1312–1318. 22 indexed citations
9.
Heft, A., et al.. (2011). Thin functional films by combustion chemical vapour deposition (C-CVD). Thin Solid Films. 520(12). 4106–4109. 16 indexed citations
11.
Heft, A., et al.. (2009). Normal Pressure CVD - an Easy and Sustainable Method for Technical Surface Functionalisation. ECS Transactions. 25(8). 679–684.
12.
Heft, A., et al.. (2007). Photocatalytically active multi-layer systems with enhanced transmission. Thin Solid Films. 516(14). 4578–4580. 14 indexed citations
13.
Heft, A., et al.. (2006). Photocatalytically active thin films on float glass with enhanced hydrophilicity and transmission for photovoltaic applications. Solar Energy Materials and Solar Cells. 90(17). 2846–2854. 11 indexed citations
14.
Wendler, E., A. Heft, & W. Wesch. (1998). Ion-beam induced damage and annealing behaviour in SiC. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 141(1-4). 105–117. 181 indexed citations
15.
Wesch, W., et al.. (1998). High dose MeV oxygen ion implantation into SiC. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 141(1-4). 160–163. 14 indexed citations
16.
Wendler, E., et al.. (1997). Annealing studies of B+ implanted 6HSiC by RBS and optical sub-gap spectroscopy. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 127-128. 341–346. 19 indexed citations
17.
Wendler, E., A. Heft, U. Zammit, et al.. (1996). Sub-gap optical properties of ion implanted SiC. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 116(1-4). 398–403. 26 indexed citations
18.
Heft, A., E. Wendler, J. Heindl, et al.. (1996). Damage production and annealing of ion implanted silicon carbide. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 113(1-4). 239–243. 36 indexed citations
19.
Heft, A., E. Wendler, T. Bachmann, E. Glaser, & W. Wesch. (1995). Defect production and annealing in ion implanted silicon carbide. Materials Science and Engineering B. 29(1-3). 142–146. 38 indexed citations
20.
Wesch, W., A. Heft, E. Wendler, T. Bachmann, & E. Glaser. (1995). High temperature ion implantation of silicon carbide. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 96(1-2). 335–338. 39 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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