H. Oppolzer

909 total citations
41 papers, 688 citations indexed

About

H. Oppolzer is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, H. Oppolzer has authored 41 papers receiving a total of 688 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 16 papers in Atomic and Molecular Physics, and Optics and 16 papers in Materials Chemistry. Recurrent topics in H. Oppolzer's work include Silicon and Solar Cell Technologies (14 papers), Semiconductor materials and devices (14 papers) and Semiconductor materials and interfaces (12 papers). H. Oppolzer is often cited by papers focused on Silicon and Solar Cell Technologies (14 papers), Semiconductor materials and devices (14 papers) and Semiconductor materials and interfaces (12 papers). H. Oppolzer collaborates with scholars based in Germany, Austria and Poland. H. Oppolzer's co-authors include H. Cerva, H. Schmelz, Steven E. Schild, D. Theis, I. Eisele, K. Eberl, H. Reisinger, W. Wegscheider, H.P. Zeindl and H. Schaber and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

H. Oppolzer

40 papers receiving 651 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. Oppolzer Germany 15 511 315 276 79 65 41 688
Seigô Kishino Japan 16 503 1.0× 266 0.8× 251 0.9× 50 0.6× 90 1.4× 42 691
Morio Inoue Japan 11 536 1.0× 252 0.8× 165 0.6× 45 0.6× 65 1.0× 55 620
E. Lugujjo United States 10 360 0.7× 217 0.7× 212 0.8× 117 1.5× 85 1.3× 15 539
Hideo Sunami Japan 12 452 0.9× 190 0.6× 137 0.5× 51 0.6× 86 1.3× 40 566
Seijiro Furukawa Japan 14 429 0.8× 227 0.7× 207 0.8× 56 0.7× 61 0.9× 37 560
P. D. Augustus United Kingdom 14 315 0.6× 135 0.4× 273 1.0× 56 0.7× 36 0.6× 27 450
John E. Davey United States 15 363 0.7× 182 0.6× 305 1.1× 52 0.7× 79 1.2× 39 510
Toshikazu Shimada Japan 18 720 1.4× 577 1.8× 169 0.6× 47 0.6× 110 1.7× 47 839
M. F. C. Willemsen Netherlands 13 429 0.8× 189 0.6× 124 0.4× 73 0.9× 50 0.8× 22 539
J. Fontenille France 14 464 0.9× 442 1.4× 161 0.6× 124 1.6× 28 0.4× 32 697

Countries citing papers authored by H. Oppolzer

Since Specialization
Citations

This map shows the geographic impact of H. Oppolzer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Oppolzer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Oppolzer more than expected).

Fields of papers citing papers by H. Oppolzer

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Oppolzer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Oppolzer. The network helps show where H. Oppolzer may publish in the future.

Co-authorship network of co-authors of H. Oppolzer

This figure shows the co-authorship network connecting the top 25 collaborators of H. Oppolzer. A scholar is included among the top collaborators of H. Oppolzer based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Oppolzer. H. Oppolzer is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Thomä, Sabrina L. J., H. Riechert, A. Mitwalsky, & H. Oppolzer. (1992). Determination of composition profile and atomic-scale roughness of GaAs/AlGaAs interfaces by high-resolution transmission electron microscopy. Journal of Crystal Growth. 123(1-2). 287–305. 6 indexed citations
2.
Reisinger, H., H. Oppolzer, & W. Hönlein. (1992). Thickness determination of thin SiO2 on silicon. Solid-State Electronics. 35(6). 797–803. 11 indexed citations
3.
Oppolzer, H., et al.. (1991). Particle Beam Microanalysis: Fundamentals, Methods and Applications. Medical Entomology and Zoology. 4 indexed citations
4.
Cerva, H. & H. Oppolzer. (1990). Characterisation of heteroepitaxial compound semiconductor layers and superlattices using transmission electron microscopy. Progress in Crystal Growth and Characterization of Materials. 20(3). 231–261. 16 indexed citations
5.
Wegscheider, W., K. Eberl, G. Abstreiter, H. Cerva, & H. Oppolzer. (1990). New Relaxation Mechanism in Short Period Si/Ge Strained-Layer Superlattices. MRS Proceedings. 183. 2 indexed citations
6.
Wegscheider, W., K. Eberl, G. Abstreiter, H. Cerva, & H. Oppolzer. (1990). Novel relaxation process in strained Si/Ge superlattices grown on Ge (001). Applied Physics Letters. 57(15). 1496–1498. 47 indexed citations
7.
Zeindl, H.P., I. Eisele, H. Oppolzer, et al.. (1987). Growth and characterization of a delta-function doping layer in Si. Applied Physics Letters. 50(17). 1164–1166. 112 indexed citations
8.
Wendt, H., et al.. (1987). Diffusion of B and As from polycrystalline silicon during rapid optical annealing. Journal of Applied Physics. 62(7). 2784–2788. 23 indexed citations
9.
Cerva, H., Evita Mohr, & H. Oppolzer. (1987). Transmission electron microscope study of lattice damage and polymer coating formed after reactive ion etching of SiO2. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 5(2). 590–593. 17 indexed citations
10.
Hoheisel, M., et al.. (1987). The interfaces a-Si:H/Pd and a-Si:H/ITO: Structure and electronic properties. Journal of Non-Crystalline Solids. 97-98. 959–962. 7 indexed citations
11.
Zeindl, H.P., et al.. (1987). Influence of substrate misorientation and temperature on MBE-grown Si. Journal of Crystal Growth. 81(1-4). 231–236. 12 indexed citations
12.
Pawlik, D. A., et al.. (1985). Characterization of thermal oxides grown on TaSi2/polysilicon films. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 3(2). 492–499. 8 indexed citations
13.
Oppolzer, H., et al.. (1984). Influence of slight deviations from TaSi2 stoichiometry on the high-temperature stability of tantalum silicide/silicon contacts. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 2(4). 630–635. 10 indexed citations
14.
Oppolzer, H., et al.. (1984). Tiefenprofilanalysen und TEM-Querschnitte von Tantalsilicid-Polysilicium-Doppelschichten. Analytical and Bioanalytical Chemistry. 319(6-7). 861–866. 10 indexed citations
15.
Oppolzer, H., et al.. (1983). Interface Reactions In Tasi 2/Si Contacts at High Temperature. MRS Proceedings. 25. 1 indexed citations
16.
17.
Oppolzer, H., et al.. (1980). Cross‐Sectional Transmission Electron Microscopy For Polycrystalline Silicon Films. Journal of Microscopy. 118(1). 97–103. 11 indexed citations
18.
Oppolzer, H., et al.. (1980). Electron Microscope Study Of Microtwins In Epitaxial Silicon Films On Sapphire. Journal of Microscopy. 118(1). 89–95. 14 indexed citations
19.
Heimendahl, Manfred von & H. Oppolzer. (1978). Direct measurement of decomposition on crystallisation of metglasR 2826A by X-ray microanalysis in stem. Scripta Metallurgica. 12(12). 1087–1090. 18 indexed citations
20.
Skalický, P. & H. Oppolzer. (1972). Elektronenmikroskopische Untersuchung der Ausscheidungsvorgänge in einer Aluminium-Magnesium-Silizium-Legierung. International Journal of Materials Research (formerly Zeitschrift fuer Metallkunde). 63(2). 73–81. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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