E. E. King

516 total citations
33 papers, 408 citations indexed

About

E. E. King is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Hardware and Architecture. According to data from OpenAlex, E. E. King has authored 33 papers receiving a total of 408 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 4 papers in Atomic and Molecular Physics, and Optics and 3 papers in Hardware and Architecture. Recurrent topics in E. E. King's work include Semiconductor materials and devices (17 papers), Integrated Circuits and Semiconductor Failure Analysis (14 papers) and Advancements in Semiconductor Devices and Circuit Design (12 papers). E. E. King is often cited by papers focused on Semiconductor materials and devices (17 papers), Integrated Circuits and Semiconductor Failure Analysis (14 papers) and Advancements in Semiconductor Devices and Circuit Design (12 papers). E. E. King collaborates with scholars based in United States, Japan and Canada. E. E. King's co-authors include M. Simons, J.V. Osborn, W.T. Anderson, H.L. Hughes, S.C. Witczak, R.C. Lacoe, K.R. Davey, D.C. Mayer, Mary Anne Dooley and Philip J. Kuekes and has published in prestigious journals such as Journal of Applied Physics, IEEE Electron Device Letters and Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

In The Last Decade

E. E. King

31 papers receiving 377 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
E. E. King United States 13 379 45 24 20 20 33 408
K. Schuegraf United States 8 280 0.7× 88 2.0× 33 1.4× 11 0.6× 9 0.5× 20 335
C. Jahan France 14 687 1.8× 151 3.4× 49 2.0× 10 0.5× 39 1.9× 41 728
F.S. Shoucair United States 12 398 1.1× 22 0.5× 42 1.8× 7 0.3× 4 0.2× 22 421
Shaoan Yan China 12 266 0.7× 173 3.8× 20 0.8× 19 0.9× 28 1.4× 49 342
Rui Gao China 13 370 1.0× 54 1.2× 24 1.0× 12 0.6× 10 0.5× 43 409
D. Gogl Germany 9 268 0.7× 48 1.1× 152 6.3× 27 1.4× 24 1.2× 13 328
A. Scarpa Italy 12 554 1.5× 120 2.7× 16 0.7× 4 0.2× 3 0.1× 45 628
C.-Y. Lu Taiwan 15 679 1.8× 109 2.4× 127 5.3× 19 0.9× 18 0.9× 60 707
R.‐P. Vollertsen Germany 15 804 2.1× 117 2.6× 32 1.3× 12 0.6× 10 0.5× 52 839
G. Servalli Italy 7 261 0.7× 204 4.5× 28 1.2× 7 0.3× 48 2.4× 14 299

Countries citing papers authored by E. E. King

Since Specialization
Citations

This map shows the geographic impact of E. E. King's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. E. King with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. E. King more than expected).

Fields of papers citing papers by E. E. King

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. E. King. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. E. King. The network helps show where E. E. King may publish in the future.

Co-authorship network of co-authors of E. E. King

This figure shows the co-authorship network connecting the top 25 collaborators of E. E. King. A scholar is included among the top collaborators of E. E. King based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. E. King. E. E. King is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Mayer, D.C., R.C. Lacoe, E. E. King, & J.V. Osborn. (2004). Reliability enhancement in high-performance MOSFETs by annular transistor design. IEEE Transactions on Nuclear Science. 51(6). 3615–3620. 28 indexed citations
2.
3.
King, E. E., et al.. (2001). Influence of the lightly doped drain resistance on the worst-case hot-carrier stress condition for NMOS devices. Microelectronics Reliability. 41(5). 649–660.
4.
Wang, K. L., M. S. Leung, G. W. Stupian, et al.. (2000). Fabrication of bismuth nanowires with a silver nanocrystal shadowmask. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 18(4). 1326–1328. 17 indexed citations
5.
King, E. E., et al.. (1993). Improved method for evaluating hot-carrier aging in p-channel MOSFET's. 38–42. 6 indexed citations
6.
King, E. E., et al.. (1991). Correlation between channel hot-electron degradation and radiation-induced interface trapping in N-channel LDD devices. IEEE Transactions on Nuclear Science. 38(6). 1336–1341. 8 indexed citations
7.
King, E. E., et al.. (1983). The Hardness Assurance Wafer Probe - HAWP. IEEE Transactions on Nuclear Science. 30(6). 4345–4350. 5 indexed citations
8.
King, E. E., et al.. (1982). Transient Radiation Screening of Silicon Devices Using Backside Laser Irradiation. IEEE Transactions on Nuclear Science. 29(6). 1809–1815. 20 indexed citations
9.
Anderson, W.T., et al.. (1982). Reduction of Long-Term Transient Radiation Response in Ion Implanted GaAs FETs. IEEE Transactions on Nuclear Science. 29(6). 1533–1538. 23 indexed citations
10.
Anderson, W.T., et al.. (1982). Long-term transient radiation-resistant GaAs FET's. IEEE Electron Device Letters. 3(9). 248–250. 4 indexed citations
11.
Simons, M., et al.. (1981). Transient radiation study of GaAs metal semiconductor field effect transistors implanted in Cr-doped and undoped substrates. Journal of Applied Physics. 52(11). 6630–6636. 26 indexed citations
12.
King, E. E., et al.. (1981). Use of a Pinch Resistor for Neutron Hardness Assurance Screening of Bipolar Integrated Circuits. IEEE Transactions on Nuclear Science. 28(6). 4318–4321. 1 indexed citations
13.
Davey, K.R. & E. E. King. (1981). A Three Dimensional Scalar Potential Field Solution and its Application to the Turbine Generator End Region. IEEE Transactions on Power Apparatus and Systems. PAS-100(5). 2302–2310. 15 indexed citations
14.
Simons, M. & E. E. King. (1979). Long-Term Radiation Transients in GaAs FETs. IEEE Transactions on Nuclear Science. 26(6). 5080–5086. 26 indexed citations
15.
King, E. E.. (1978). Total Dose Tfsting of Several Types of MOS Microprocessors. IEEE Transactions on Nuclear Science. 25(6). 1649–1651. 1 indexed citations
16.
Hughes, H.L. & E. E. King. (1976). The Influence of Silicon Surface Defects on MOS Radiation-Sensitivity. IEEE Transactions on Nuclear Science. 23(6). 1573–1579. 6 indexed citations
17.
King, E. E., et al.. (1972). The Effects of Ionizing Radiation on Various CMOS Integrated Circuit Structures. IEEE Transactions on Nuclear Science. 19(6). 264–270. 13 indexed citations
18.
King, E. E., et al.. (1967). Torque on a Superconducting Torus in a Uniform Field. Journal of Applied Physics. 38(2). 745–752. 1 indexed citations
19.
King, E. E.. (1966). Equivalent Circuits for Two-Dimensional Magnetic Fields: I - The Static Field. IEEE Transactions on Power Apparatus and Systems. PAS-85(9). 927–935. 11 indexed citations
20.
King, E. E., et al.. (1959). An Approach to Airborne Digital Computer Equipment Construction. 4(1). 18–21. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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