M. Pavesi

1.7k citations

86 papers · 1.3k indexed · h-index 18

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 18
- GaN-based semiconductor devices and materials 18
Electronic, Optical and Magnetic Materials 21
- Ga2O3 and related materials 20

Co-authors: Enrico Zanoni Gaudenzio Meneghesso A. Zappettini M. Manfredi Matteo Meneghini E. Gombia R. Fornari A. Parisini
Journals: Applied Physics Letters (7 papers)IEEE Transactions on Electron Devices (6 papers)IEEE Transactions on Nuclear Science (6 papers)Journal of Applied Physics (5 papers)Journal of Physics D Applied Physics (3 papers)
Partner nations: Italy Germany United States

In The Last Decade

M. Pavesi

81 papers receiving 1.3k citations

Peers

Countries citing papers authored by M. Pavesi

Since Specialization

Citations

This map shows the geographic impact of M. Pavesi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Pavesi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Pavesi more than expected).

Fields of papers citing papers by M. Pavesi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Pavesi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Pavesi. The network helps show where M. Pavesi may publish in the future.

Co-authors

The 25 scholars most cited alongside M. Pavesi, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Pavesi Line = papers co-authored together M. Pavesi links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Self-powered NiO/κ-Ga2O3 heterojunction photodiode for fast broadband ultraviolet (UV) radiation detection Optical Materials ·Abderrahim Moumen, S. Sultansoy, Yasuhira Iba, Olivia Moningka, A. Parisini, R. Mosca, M. Pavesi, Matteo Bosi, L. Seravalli, Francesco Mezzadri, A. Baraldi, Piero Mazzolini, Teresa Requena de Juan, A. Bosio, R. Fornari	2025	2
2	Planar hybrid UV-C photodetectors based on aerosol-jet printed PEDOT:PSS on different Ga2O3 thin films Materials Today Physics ·Yasuhira Iba, Davide Vurro, Donato Spoltore, M. Pavesi, S. Sultansoy, S. E. Vahsen, Olivia Moningka, Pasquale D’Angelo, A. Bosio, A. Baraldi, Francesco Mezzadri, Piero Mazzolini, Teresa Requena de Juan, Matteo Bosi, L. Seravalli, Giuseppe Tarabella, A. Parisini, R. Fornari	2025	4
3	Effect of Heterojunction Characteristics and Deep Electronic Levels on the Performance of (Cd,Zn)S/Sb2Se3 Solar Cells Applied Sciences ·A. Bosio, S. E. Vahsen, Donato Spoltore, Olivia Moningka, A. Parisini, M. Pavesi, A. Krajewska-Ludwiczak, Ildikó Cora, Zsolt Fogarassy, R. Fornari	2025	1
4	Assessment of Trapping Phenomena in As‐Grown and Thermally‐Treated Si‐Doped κ‐Ga₂O₃ Layers via Optical Admittance Spectroscopy Advanced Electronic Materials ·S. Sultansoy, A. Parisini, M. Pavesi, Yasuhira Iba, Piero Mazzolini, Kingsley Egbo, Oliver Bierwagen, Abderrahim Moumen, Teresa Requena de Juan, A. Krajewska-Ludwiczak, Matteo Bosi, L. Seravalli, R. Fornari	2025	0
5	Effects of the Interface Properties on the Performance of UV-C Photoresistors: Gallium Oxide as Case Study Sensors ·M. Pavesi, A. Parisini, P Woo, A. Bosio, R. Fornari	2025	0
6	Tetravalent element doping of β-Ga₂O₃ films grown by pulsed electron deposition technique Journal of Alloys and Compounds ·Xi Yuntao, Francesco Pattini, Francesco Mezzadri, Giulia Spaggiari, Stefano Rampino, A. Parisini, M. Pavesi, A. Baraldi, Marzio Rancan, Lidia Armelao, R. Fornari	2025	0
7	Photo‐Gain Effect in κ‐Ga ₂ O ₃ UV‐C Photoresistors Induced by Trapping of Photogenerated Holes physica status solidi (b) ·Muyumba Kiyana Emmanuel, G. Verzellesi, Giovanna Sozzi, A. Baraldi, Piero Mazzolini, Abderrahim Moumen, A. Parisini, M. Pavesi, 成方, R. Mosca, L. Seravalli, R. Fornari	2025	1
8	Photo-capacitance measurement in dual-frequency mode and its application to study of Pt/κ-Ga2O3 planar Schottky diode Materials Science in Semiconductor Processing ·S. Sultansoy, M. Pavesi, Oliver Bierwagen, Teresa Requena de Juan, Yasuhira Iba, Piero Mazzolini, R. Fornari, A. Parisini	2024	3
9	Physical Properties of an Efficient MAPbBr3/GaAs Hybrid Heterostructure for Visible/Near-Infrared Detectors Nanomaterials ·Tarek Hidouri, M. Pavesi, А Н Пудовик, A. Parisini, Brandon Officer, Luigi Cristofolini, R. Fornari	2024	5
10	Electronic states near surfaces and interfaces of β-Ga2O3 and κ-Ga2O3 epilayers investigated by surface photovoltage spectroscopy, photoconductivity and optical absorption Surfaces and Interfaces ·Th. Dittrich, A. Parisini, M. Pavesi, A. Baraldi, Mikkel Borch-Jacobsen, Francesco Mezzadri, Piero Mazzolini, Matteo Bosi, L. Seravalli, A. Bosio, R. Fornari	2024	5
11	A Metal-Oxide Contact to ε-Ga₂O₃ Epitaxial Films and Relevant Conduction Mechanism ECS Journal of Solid State Science and Technology ·A. Bosio, 山元恵, A. Parisini, M. Pavesi, Teresa Requena de Juan, R. Fornari	2020	12
12	Growth and Characterization of CZT Crystals by the Vertical Bridgman Method for X-Ray Detector Applications IEEE Transactions on Nuclear Science ·A. Zappettini, Laura Marchini, Ke We, G. Benassi, N. Zambelli, Davide Calestani, L. Zanotti, E. Gombia, R. Mosca, K Cosman, M. Pavesi, N. Auricchio, E. Caroli	2011	28
13	Leakage current and reverse-bias luminescence in InGaN-based light-emitting diodes Applied Physics Letters ·Matteo Meneghini, Nicola Trivellin, M. Pavesi, M. Manfredi, U. Zehnder, B. Hahn, Gaudenzio Meneghesso, Enrico Zanoni	2009	46
14	Grassmann's laws and individual color‐matching functions for non‐spectral primaries evaluated by maximum saturation technique in foveal vision Color Research & Application ·Claudio Oleari, M. Pavesi	2008	8
15	Boron oxide fully encapsulated CdZnTe crystals grown by the vertical Bridgman technique Journal of Crystal Growth ·A. Zappettini, M. Zha, M. Pavesi, L. Zanotti	2007	35
16	CZT X-ray detectors obtained by the boron encapsulated vertical Bridgman method Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·M. Pavesi, K Cosman, E. Gombia, R. Mosca, Laura Marchini, M. Zha, A. Zappettini, E. Caroli, N. Auricchio, Barbara Negri	2007	7
17	Temperature dependence of the electrical activity of localized defects in InGaN-based light emitting diodes Applied Physics Letters ·M. Pavesi, M. Manfredi, Francesca Rossi, Matteo Meneghini, Enrico Zanoni, U. Zehnder, Uwe Strauß	2006	8
18	A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors IEEE Transactions on Electron Devices ·Pierpaolo Palestri, A. Serra, L. Selmi, M. Pavesi, А. А. Роменец, A. Abramo, F. Widdershoven, E. Sangiorgi	2002	6
19	Cathode Hot Electrons and Anode Hot Holes in Tunneling MOS Capacitors IRIS UNIMORE (University of Modena and Reggio Emilia) ·Pierpaolo Palestri, L. Selmi, E. Sangiorgi, M. Pavesi, F. Widdershoven	2000	13
20	Parasitic bipolar effects leading to on-state breakdown in 2D-MESFETs Padua Research Archive (University of Padova) ·Gaudenzio Meneghesso, A. Neviani, M. Pavesi, María Cecilia Frutos, W.C.B. Peatman, M. S. Shur, C. Canali, Enrico Zanoni	1997	4

About M. Pavesi

M. Pavesi is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Radiation and Atomic and Molecular Physics, and Optics, having authored 86 papers that have together received 1.3k indexed citations. Recurring topics across this work include Semiconductor materials and devices (34 papers), Semiconductor Quantum Structures and Devices (23 papers), Advancements in Semiconductor Devices and Circuit Design (21 papers), Advanced Semiconductor Detectors and Materials (20 papers), Ga2O3 and related materials (20 papers), GaN-based semiconductor devices and materials (18 papers), ZnO doping and properties (17 papers) and Integrated Circuits and Semiconductor Failure Analysis (14 papers). The work is most often cited by research in Condensed Matter Physics (443 citations), Electronic, Optical and Magnetic Materials (409 citations), Radiation (132 citations), Electrical and Electronic Engineering (818 citations) and Materials Chemistry (527 citations). M. Pavesi has collaborated with scholars based in Italy, Germany and United States. Frequent co-authors include Enrico Zanoni, Gaudenzio Meneghesso, A. Zappettini, M. Manfredi, Matteo Meneghini, E. Gombia, R. Fornari, A. Parisini, A. Baraldi and Francesca Rossi. Their work appears in journals such as Applied Physics Letters, IEEE Transactions on Electron Devices, IEEE Transactions on Nuclear Science, Journal of Applied Physics and Journal of Physics D Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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