D.R. Pehlke

587 citations

24 papers · 409 indexed · h-index 9

Impact in

Electrical and Electronic Engineering top 10%
- Radio Frequency Integrated Circuit Design
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Electrostatic Discharge in Electronics
- Electromagnetic Compatibility and Noise Suppression
- Advanced Power Amplifier Design
- Microwave Engineering and Waveguides
Condensed Matter Physics

Papers in

Electrical and Electronic Engineering 24
- Radio Frequency Integrated Circuit Design 20
- Advancements in Semiconductor Devices and Circuit Design 8
- Semiconductor materials and devices 6
- Electrostatic Discharge in Electronics 3
- Microwave Engineering and Waveguides 3
Condensed Matter Physics 4
- GaN-based semiconductor devices and materials 4

Co-authors: D. Pavlidis M. Schröter S.H. Jen B.J. Sheu C.C. Enz Kevin Walsh M. Matloubian Mau-Chung Frank Chang
Journals: Electronics Letters (3 papers)IEEE Transactions on Electron Devices (2 papers)IEEE Electron Device Letters (1 paper)IEEE Communications Magazine (1 paper)Analog Integrated Circuits and Signal Processing (1 paper)
Partner nations: United States Switzerland

In The Last Decade

D.R. Pehlke

23 papers receiving 381 citations

Peers

Countries citing papers authored by D.R. Pehlke

Since Specialization

Citations

This map shows the geographic impact of D.R. Pehlke's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D.R. Pehlke with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D.R. Pehlke more than expected).

Fields of papers citing papers by D.R. Pehlke

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D.R. Pehlke. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D.R. Pehlke. The network helps show where D.R. Pehlke may publish in the future.

Co-authors

The 20 scholars most cited alongside D.R. Pehlke, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D.R. Pehlke Line = papers co-authored together D.R. Pehlke links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	High performance open-loop AM modulator designed for power control of E-GPRS polar modulated power amplifier D.R. Pehlke, 梨꾧꼍 Kyung-Suk Chae, Ivy Hernandez Delgado	2004	2
2	A low-power and low-noise CMOS prescaler for 900 MHz to 1.9 GHz wireless applications R. Hammerle, D.R. Pehlke, Cogley Clodagh	2003	1
3	Direct calculation of the HBT equivalent circuit from measured S-parameters D.R. Pehlke, D. Pavlidis	2003	6
4	Base-collector capacitance reduction of AlGaAs/GaAs heterojunction bipolar transistors by deep ion implantation Rodrigo Da Cruz Souza, Rob Johnson, O. V. Kaletnyk, W.J. Ho, D.R. Pehlke, P.J. Zampardi, Mau-Chung Frank Chang, P.M. Asbeck	2002	1
5	Extremely high-Q tunable inductor for Si-based RF integrated circuit applications D.R. Pehlke, Oldřich Stibůrek, Ming‐Fong Chang	2002	24
6	Comparison of the load-pull power characteristics of common-emitter and common-base heterojunction bipolar transistors Ю. А. Воронов, D. Pavlidis, D.R. Pehlke, W.J. Ho, J.A. Higgins, Suzanna Persson	2002	1
7	RF modeling issues of deep-submicron MOSFETs for circuit design Infoscience (Ecole Polytechnique Fédérale de Lausanne) ·Yuhua Cheng, M. Schröter, Christian Enz, M. Matloubian, D.R. Pehlke	2002	12
8	New analytic determination of f/sub T/, f/sub MAX/ and the frequency dependence of current gain and power gain in HBTs D.R. Pehlke, D. Pavlidis	2002	1
9	Demonstration of GaInP/GaAs heterojunction bipolar transistors grown with reduced toxicity all-metalorganic precursors Geok Ing Ng, D. Pavlidis, Ю. А. Воронов, D.R. Pehlke, (unknown), J.P. Hirtz	2002	0
10	Direct parametric extraction of 1/f noise source magnitude and physical location from baseband spectra in HBTs D.R. Pehlke, Suzanna Persson, W.J. Ho, J.A. Higgins, Mau-Chung Frank Chang	2002	3
11	High-frequency application of MOS compact models and their development for scalable RF model libraries D.R. Pehlke, Ning Lan, Oldřich Stibůrek, M. Matloubian, Mau-Chung Frank Chang	2002	39
12	A High-Frequency MOS Transistor Model and its Effects on Radio-Frequency Circuits Analog Integrated Circuits and Signal Processing ·S.H. Jen, Christian Enz, D.R. Pehlke, Zhu Zhou, B.J. Sheu	2000	3
13	Compact modeling of high-frequency distortion in bipolar transistors European Solid-State Device Research Conference ·Ning Lan, D.R. Pehlke, Govin Chunder Dutt	1999	4
14	On-chip matched 5.2 GHz differential integratedmixerwith RF and LO preamplification, fabricated in 0.35 µmCMOS technology Electronics Letters ·K. Runge, D.R. Pehlke, 歩川上	1999	3
15	On-chip matched 5.2 and 5.8 GHz differential LNAsfabricated using 0.35 µm CMOS technology Electronics Letters ·K. Runge, D.R. Pehlke, 歩川上	1999	15
16	Accurate MOS Transistor Modeling and Parameter Extraction Valid up to 10 GHz Infoscience (Ecole Polytechnique Fédérale de Lausanne) ·S.H. Jen, Christian Enz, D.R. Pehlke, M. Schröter, B.J. Sheu	1998	9
17	Manufacture of embedded integrated passive components into Low Temperature Co-fired ceramic systems S.S. Scrantom, Steve Garwood, G. Ke�el, D.R. Pehlke, 歩川上	1998	7
18	A comparative study of GaInP/GaAs heterojunction bipolar transistors grown by CBE using TBA/TBP and AsH/sub 3//PH/sub 3/ sources IEEE Electron Device Letters ·Geok Ing Ng, D. Pavlidis, Ю. А. Воронов, D.R. Pehlke, (unknown), J.P. Hirtz	1994	5
19	Volterra series based nonlinear simulation of HBTsusing analytically extracted models Electronics Letters ·Ю. А. Воронов, D.R. Pehlke, D. Pavlidis	1994	8
20	Evaluation of the factors determining HBT high-frequency performance by direct analysis of S-parameter data IEEE Transactions on Microwave Theory and Techniques ·D.R. Pehlke, D. Pavlidis	1992	101

About D.R. Pehlke

D.R. Pehlke is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Hardware and Architecture, Biomedical Engineering and Atomic and Molecular Physics, and Optics, having authored 24 papers that have together received 409 indexed citations. Recurring topics across this work include Radio Frequency Integrated Circuit Design (20 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers), Analog and Mixed-Signal Circuit Design (6 papers), Semiconductor materials and devices (6 papers), Semiconductor Quantum Structures and Devices (4 papers), GaN-based semiconductor devices and materials (4 papers), Electrostatic Discharge in Electronics (3 papers) and Microwave Engineering and Waveguides (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (407 citations), Condensed Matter Physics (34 citations), Atomic and Molecular Physics, and Optics (56 citations), Hardware and Architecture (10 citations) and Biomedical Engineering (49 citations). D.R. Pehlke has collaborated with scholars based in United States and Switzerland. Frequent co-authors include D. Pavlidis, M. Schröter, S.H. Jen, B.J. Sheu, C.C. Enz, Kevin Walsh, M. Matloubian, Mau-Chung Frank Chang, Ming‐Fong Chang and K. Runge. Their work appears in journals such as Electronics Letters, IEEE Transactions on Electron Devices, IEEE Electron Device Letters, IEEE Communications Magazine and Analog Integrated Circuits and Signal Processing.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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