W.J. Ho

614 total citations
48 papers, 417 citations indexed

About

W.J. Ho is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, W.J. Ho has authored 48 papers receiving a total of 417 indexed citations (citations by other indexed papers that have themselves been cited), including 48 papers in Electrical and Electronic Engineering, 21 papers in Atomic and Molecular Physics, and Optics and 14 papers in Condensed Matter Physics. Recurrent topics in W.J. Ho's work include Radio Frequency Integrated Circuit Design (39 papers), Semiconductor Quantum Structures and Devices (18 papers) and Semiconductor Lasers and Optical Devices (18 papers). W.J. Ho is often cited by papers focused on Radio Frequency Integrated Circuit Design (39 papers), Semiconductor Quantum Structures and Devices (18 papers) and Semiconductor Lasers and Optical Devices (18 papers). W.J. Ho collaborates with scholars based in United States, Sweden and South Korea. W.J. Ho's co-authors include J.A. Higgins, Mau-Chung Frank Chang, P.M. Asbeck, E.A. Sovero, N.H. Sheng, R.L. Pierson, Gerard Sullivan, James C. M. Hwang, C.J. Wei and P.J. Zampardi and has published in prestigious journals such as Applied Physics Letters, IEEE Journal of Solid-State Circuits and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

W.J. Ho

44 papers receiving 386 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
W.J. Ho United States	11	414	175	106	33	17	48	417
C.S. Wu United States	11	312 0.8×	134 0.8×	83 0.8×	16 0.5×	14 0.8×	36	320
J. Gering United States	11	287 0.7×	163 0.9×	47 0.4×	35 1.1×	12 0.7×	26	311
Y. Mitsui Japan	12	390 0.9×	134 0.8×	56 0.5×	23 0.7×	12 0.7×	50	401
M. Tutt United States	11	380 0.9×	179 1.0×	49 0.5×	43 1.3×	18 1.1×	42	402
M. Miyashita Japan	11	346 0.8×	151 0.9×	54 0.5×	29 0.9×	23 1.4×	52	364
A. Higashisaka Japan	9	299 0.7×	94 0.5×	48 0.5×	60 1.8×	11 0.6×	39	321
M. Hafizi United States	17	694 1.7×	409 2.3×	80 0.8×	69 2.1×	20 1.2×	53	711
D.K. Umemoto United States	14	601 1.5×	281 1.6×	99 0.9×	127 3.8×	14 0.8×	51	618
Y.A. Tkachenko United States	10	298 0.7×	69 0.4×	87 0.8×	10 0.3×	12 0.7×	51	301
Mattias Südow Sweden	10	390 0.9×	65 0.4×	228 2.2×	23 0.7×	18 1.1×	19	405

Countries citing papers authored by W.J. Ho

Since Specialization

Citations

This map shows the geographic impact of W.J. Ho's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W.J. Ho with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W.J. Ho more than expected).

Fields of papers citing papers by W.J. Ho

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W.J. Ho. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W.J. Ho. The network helps show where W.J. Ho may publish in the future.

Co-authorship network of co-authors of W.J. Ho

This figure shows the co-authorship network connecting the top 25 collaborators of W.J. Ho. A scholar is included among the top collaborators of W.J. Ho based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W.J. Ho. W.J. Ho is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Nam, Ho‐Seok, et al.. (2011). Fabrication of Source/Drain Electrodes for a-Si:H Thin-Film Transistors Using a Single Cu Alloy Target. Journal of Electronic Materials. 40(11). 2209–2213. 1 indexed citations

Ho, W.J., et al.. (2005). A GaAs BiFET LSI technology. 47–50. 9 indexed citations

Ho, W.J., et al.. (2003). Monolithic integration of HEMTs and Schottky diodes for millimeter wave circuits. 301–304.

Ho, W.J., et al.. (2003). 4 W, 7-12 GHz, compact CB HBT MMIC power amplifier. 301–304. 3 indexed citations

Sheng, N.H., Mau-Chung Frank Chang, W.J. Ho, et al.. (2003). High power efficiency X-band GaAlAs/GaAs HBT. 8. 160–166. 1 indexed citations

Ho, W.J., et al.. (2003). Producibility and performance of the microwave power HBT. 8. 263–266. 2 indexed citations

Sovero, E.A., et al.. (2002). Monolithic 40-GHz 670-mW HBT grid amplifier. 2. 1123–1126. 10 indexed citations

Sheng, N.H., W.J. Ho, Mau-Chung Frank Chang, et al.. (2002). 18 GHz high gain, high efficiency power operation of AlGaAs/GaAs HBT. 7. 997–1000. 7 indexed citations

Johnson, Rob, W.J. Ho, D.R. Pehlke, et al.. (2002). Base-collector capacitance reduction of AlGaAs/GaAs heterojunction bipolar transistors by deep ion implantation. 8. 86–87. 1 indexed citations

10.

Ho, W.J., Mau-Chung Frank Chang, N.H. Sheng, et al.. (2002). A multifunctional HBT technology. 8. 67–70. 4 indexed citations

11.

Wei, C.J., James C. M. Hwang, W.J. Ho, & J.A. Higgins. (1996). Large-signal modeling of self-heating, collector transit-time, and RF-breakdown effects in power HBTs. IEEE Transactions on Microwave Theory and Techniques. 44(12). 2641–2647. 29 indexed citations

12.

Johnson, Rob, et al.. (1995). High-performance low-base-collector capacitance AlGaAs/GaAs heterojunction bipolar transistors fabricated by deep ion implantation. IEEE Electron Device Letters. 16(11). 512–514. 19 indexed citations

13.

Higgins, J.A., E.A. Sovero, & W.J. Ho. (1995). 44-GHz monolithic plane-wave amplifiers. IEEE Microwave and Guided Wave Letters. 5(10). 347–348. 13 indexed citations

14.

Zampardi, P.J., Jin Yu, Kenneth D. Pedrotti, et al.. (1995). Circuit demonstrations in a GaAs BiFET technology. Solid-State Electronics. 38(9). 1723–1726. 1 indexed citations

15.

Ho, W.J., et al.. (1992). Self-aligned, emitter-edge-passivated AlGaAs/GaAs heterojunction bipolar transistors with extrapolated maximum oscillation frequency of 350-GHz. IEEE Transactions on Electron Devices. 39(11). 2655–2655. 6 indexed citations

16.

Farley, C. W., et al.. (1992). Performance tradeoffs in AlInAs/GaInAs single- and double-heterojunction NpN heterojunction bipolar transistors. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 10(2). 1023–1025. 2 indexed citations

17.

Kim, Michelle, E.A. Sovero, W.J. Ho, et al.. (1992). A 10-GHz quasi-optical grid amplifier using integrated HBT differential pairs. IEEE Transactions on Electron Devices. 39(11). 2667–2668. 1 indexed citations

18.

Ho, W.J., et al.. (1991). New de-embedding method for millimetre-wave bipolar transistor S -parameter measurement. Electronics Letters. 27(18). 1611–1612. 5 indexed citations

19.

Sheng, N.H., et al.. (1991). A 30 GHz bandwidth AlGaAs-GaAs HBT direct-coupled feedback amplifier. IEEE Microwave and Guided Wave Letters. 1(8). 208–210. 24 indexed citations

20.

Chao, S., et al.. (1983). <title>Low Cost Media Having a Reverse Trilayer Structure</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 420. 282–287. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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