A. Laubsch

906 total citations
20 papers, 761 citations indexed

About

A. Laubsch is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, A. Laubsch has authored 20 papers receiving a total of 761 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Condensed Matter Physics, 12 papers in Atomic and Molecular Physics, and Optics and 8 papers in Electrical and Electronic Engineering. Recurrent topics in A. Laubsch's work include GaN-based semiconductor devices and materials (18 papers), Semiconductor Quantum Structures and Devices (11 papers) and Ga2O3 and related materials (7 papers). A. Laubsch is often cited by papers focused on GaN-based semiconductor devices and materials (18 papers), Semiconductor Quantum Structures and Devices (11 papers) and Ga2O3 and related materials (7 papers). A. Laubsch collaborates with scholars based in Germany and United States. A. Laubsch's co-authors include M. Sabathil, Matthias Peter, J. Baur, Berthold Hahn, Werner Bergbauer, Ph. Ebert, Stephan Lutgen, N. Linder, Tobias Meyer and M. Dähne and has published in prestigious journals such as Applied Physics Letters, Physical Review B and Proceedings of the IEEE.

In The Last Decade

A. Laubsch

19 papers receiving 716 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Laubsch Germany 13 627 421 333 272 188 20 761
Berthold Hahn Germany 13 692 1.1× 423 1.0× 377 1.1× 278 1.0× 187 1.0× 28 821
David S. Meyaard South Korea 13 805 1.3× 454 1.1× 392 1.2× 352 1.3× 280 1.5× 17 929
Jay Shah United States 10 490 0.8× 331 0.8× 532 1.6× 319 1.2× 143 0.8× 22 884
Mike Iza United States 12 585 0.9× 213 0.5× 299 0.9× 274 1.0× 226 1.2× 15 708
Changda Zheng China 12 516 0.8× 212 0.5× 246 0.7× 390 1.4× 237 1.3× 37 719
K. A. Bulashevich Russia 19 828 1.3× 488 1.2× 443 1.3× 437 1.6× 269 1.4× 47 1.0k
Mohsen Nami United States 15 460 0.7× 202 0.5× 330 1.0× 223 0.8× 207 1.1× 32 653
Ashwin K. Rishinaramangalam United States 16 679 1.1× 265 0.6× 407 1.2× 390 1.4× 343 1.8× 31 924
Qifeng Shan United States 13 801 1.3× 509 1.2× 412 1.2× 324 1.2× 244 1.3× 16 982
S. X. Jin United States 9 621 1.0× 280 0.7× 472 1.4× 292 1.1× 170 0.9× 10 851

Countries citing papers authored by A. Laubsch

Since Specialization
Citations

This map shows the geographic impact of A. Laubsch's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Laubsch with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Laubsch more than expected).

Fields of papers citing papers by A. Laubsch

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Laubsch. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Laubsch. The network helps show where A. Laubsch may publish in the future.

Co-authorship network of co-authors of A. Laubsch

This figure shows the co-authorship network connecting the top 25 collaborators of A. Laubsch. A scholar is included among the top collaborators of A. Laubsch based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Laubsch. A. Laubsch is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Galler, Bastian, M. Sabathil, A. Laubsch, et al.. (2011). Green high‐power light sources using InGaN multi‐quantum‐well structures for full conversion. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(7-8). 2369–2371. 17 indexed citations
2.
Stauß, P., Martin Mandl, A. Laubsch, et al.. (2011). Monolitically grown dual wavelength InGaN LEDs for improved CRI. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(7-8). 2396–2398. 3 indexed citations
3.
Galler, Bastian, A. Laubsch, Adam Wojcik, et al.. (2011). Investigation of the carrier distribution in InGaN‐based multi‐quantum‐well structures. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(7-8). 2372–2374. 17 indexed citations
4.
Bakin, A., Arne Behrends, A. Waag, et al.. (2010). ZnO-GaN Hybrid Heterostructures as Potential Cost-Efficient LED Technology. Proceedings of the IEEE. 98(7). 1281–1287. 22 indexed citations
5.
Peter, Matthias, Karl Engl, Frank Baumann, et al.. (2010). Recent Progress in High Efficiency InGaN LEDs. CMB1–CMB1. 4 indexed citations
6.
Laubsch, A., M. Sabathil, Werner Bergbauer, et al.. (2009). On the origin of IQE‐‘droop’ in InGaN LEDs. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 101 indexed citations
7.
Queren, Desirée, Marc Schillgalies, Adrian Avramescu, et al.. (2009). Quality and thermal stability of thin InGaN films. Journal of Crystal Growth. 311(10). 2933–2936. 56 indexed citations
8.
Schwarz, Ulrich T., et al.. (2009). Bias dependent spatially resolved photoluminescence spectroscopy and photocurrent measurements of InGaN/GaN LED structures. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 3 indexed citations
9.
Laubsch, A., Werner Bergbauer, M. Sabathil, et al.. (2009). Luminescence properties of thick InGaN quantum‐wells. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 23 indexed citations
10.
Peter, Matthias, A. Laubsch, Werner Bergbauer, et al.. (2009). New developments in green LEDs. physica status solidi (a). 206(6). 1125–1129. 72 indexed citations
11.
Laubsch, A., M. Sabathil, J. Baur, Matthias Peter, & Berthold Hahn. (2009). High-Power and High-Efficiency InGaN-Based Light Emitters. IEEE Transactions on Electron Devices. 57(1). 79–87. 286 indexed citations
12.
Ebert, Ph., et al.. (2009). Electronic properties of dislocations in GaN investigated by scanning tunneling microscopy. Applied Physics Letters. 94(6). 62104–62104. 28 indexed citations
13.
14.
Peter, Matthias, A. Laubsch, P. Stauß, et al.. (2008). Green ThinGaN power‐LED demonstrates 100 lm. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 2050–2052. 22 indexed citations
15.
Braun, Harald, Tobias Meyer, Ulrich T. Schwarz, et al.. (2008). Measurement and simulation of the lateral mode profile of broad ridge 405 nm (Al,In)GaN laser diodes. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6997. 69971U–69971U. 7 indexed citations
16.
Meyer, Tobias, Harald Braun, Ulrich T. Schwarz, et al.. (2008). Spectral measurements and simulations of 405 nm (Al, In)GaN test laser structures grown on SiC and GaN substrate. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6997. 699708–699708.
17.
Иванова, Л. Д., et al.. (2008). Surface states and origin of the Fermi level pinning on nonpolar GaN(11¯00) surfaces. Applied Physics Letters. 93(19). 54 indexed citations
18.
Schillgalies, Marc, A. Laubsch, S. Lutgen, et al.. (2008). Defect‐related recombination in InGaN‐lasers. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 2192–2194. 6 indexed citations
19.
Laubsch, A., M. Sabathil, J. Wagner, et al.. (2007). Measurement of the internal quantum efficiency of InGaN quantum wells. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6486. 64860J–64860J. 8 indexed citations
20.
Sabathil, M., A. Laubsch, & N. Linder. (2007). Self-consistent modeling of resonant PL in InGaN SQW LED-structure. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6486. 64860V–64860V. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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