S. Murad

460 total citations
34 papers, 352 citations indexed

About

S. Murad is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, S. Murad has authored 34 papers receiving a total of 352 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 16 papers in Condensed Matter Physics and 8 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in S. Murad's work include Semiconductor materials and devices (19 papers), GaN-based semiconductor devices and materials (16 papers) and Plasma Diagnostics and Applications (7 papers). S. Murad is often cited by papers focused on Semiconductor materials and devices (19 papers), GaN-based semiconductor devices and materials (16 papers) and Plasma Diagnostics and Applications (7 papers). S. Murad collaborates with scholars based in United Kingdom, Germany and Netherlands. S. Murad's co-authors include S. P. Beaumont, C.D.W. Wilkinson, S. Thoms, C. D. W. Wilkinson, C.D.W. Wilkinson, M. Rahman, R. Quay, S. Vitanov, V. Palankovski and S. Selberherr and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Electronics Letters.

In The Last Decade

S. Murad

31 papers receiving 329 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
S. Murad United Kingdom	11	276	179	123	50	50	34	352
K. Haberland Germany	12	236 0.9×	195 1.1×	143 1.2×	102 2.0×	43 0.9×	24	340
C. Anayama Japan	11	303 1.1×	295 1.6×	73 0.6×	71 1.4×	40 0.8×	25	378
R. W. Streater Canada	12	250 0.9×	250 1.4×	37 0.3×	105 2.1×	78 1.6×	31	359
Koichi Kamon Japan	11	306 1.1×	285 1.6×	116 0.9×	91 1.8×	37 0.7×	15	380
Kazuhiko Hosomi Japan	9	396 1.4×	403 2.3×	210 1.7×	59 1.2×	54 1.1×	28	489
P. Roentgen Switzerland	12	431 1.6×	467 2.6×	95 0.8×	100 2.0×	65 1.3×	37	570
O. Imafuji Japan	12	306 1.1×	277 1.5×	262 2.1×	116 2.3×	33 0.7×	35	455
P.J. van der Wel Netherlands	12	254 0.9×	246 1.4×	178 1.4×	64 1.3×	43 0.9×	34	438
G. Strauch Germany	11	218 0.8×	112 0.6×	75 0.6×	92 1.8×	41 0.8×	36	316
J. P. Salerno United States	13	394 1.4×	420 2.3×	85 0.7×	92 1.8×	56 1.1×	31	528

Countries citing papers authored by S. Murad

Since Specialization

Citations

This map shows the geographic impact of S. Murad's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Murad with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Murad more than expected).

Fields of papers citing papers by S. Murad

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Murad. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Murad. The network helps show where S. Murad may publish in the future.

Co-authorship network of co-authors of S. Murad

This figure shows the co-authorship network connecting the top 25 collaborators of S. Murad. A scholar is included among the top collaborators of S. Murad based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Murad. S. Murad is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Ayop, Osman, et al.. (2025). Ultra-Wideband Antenna Design Based on Modified-Slotted Patch. 1–4.

Murad, S., et al.. (2025). Performance Analysis of Silicon Carbide MOSFETs Using Silicon Dioxide and Silicon Nitride Gate Dielectrics. 377–381.

Pinos, Andrea, W. S. Tan, A. Chitnis, et al.. (2014). Excellent uniformity on large diameter GaN on silicon LED wafer. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 11(3-4). 624–627. 5 indexed citations

Murad, S., et al.. (2014). Magnetoresistance of AlGaN/GaN High Electron Mobility Transistors on Silicon. Materials science forum. 778-780. 1180–1184. 1 indexed citations

Murad, S., Atsushi Nishikawa, Andrea Pinos, et al.. (2014). GaN‐on‐Si wafers for HEMTs with high power‐driving capability. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 11(3-4). 945–948. 5 indexed citations

Pinos, Andrea, W. S. Tan, A. Chitnis, et al.. (2013). Highly Uniform Electroluminescence from 150 and 200 mm GaN-on-Si-Based Blue Light-Emitting Diode Wafers. Applied Physics Express. 6(9). 95502–95502. 6 indexed citations

Murad, S., et al.. (2011). Small signal and pulse characteristics of AlN/GaN MOS-HEMTs. European Microwave Integrated Circuit Conference. 340–343. 1 indexed citations

Allerstam, Fredrik, et al.. (2010). A surface-potential based model for GaN HEMTs in RF power amplifier applications. Zenodo (CERN European Organization for Nuclear Research). 57. 8.3.1–8.3.4. 8 indexed citations

Dammann, M., W. Pletschen, Patrick Waltereit, et al.. (2009). Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems. Microelectronics Reliability. 49(5). 474–477. 24 indexed citations

10.

Vitanov, S., V. Palankovski, S. Murad, et al.. (2007). Predictive Simulation of AlGaN/GaN HEMTs. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 1–4. 10 indexed citations

11.

Helmy, Amr S., S. Murad, A.C. Bryce, et al.. (1999). Control of silica cap properties by oxygen plasma treatment for single-cap selective impurity free vacancy disordering. Applied Physics Letters. 74(5). 732–734. 22 indexed citations

12.

Zhou, Haiping, et al.. (1998). Generic scanned-probe microscope sensors by combined micromachining and electron-beam lithography. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(1). 54–58. 35 indexed citations

13.

Giaconia, Giuseppe Costantino, et al.. (1998). Artificial dielectric optical structures: A challenge for nanofabrication. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(6). 3903–3905. 5 indexed citations

14.

Krauss, Thomas F., C.J.M. Smith, B. Vögele, et al.. (1997). Two-dimensional waveguide based photonic microstructures in GaAs and InP. Microelectronic Engineering. 35(1-4). 29–32. 17 indexed citations

15.

Murad, S., et al.. (1997). Anisotropic pattern transfer of fine resist features to silicon nitride via an intermediate titanium layer. Microelectronic Engineering. 35(1-4). 99–102. 6 indexed citations

16.

Murad, S., S. P. Beaumont, & C. D. W. Wilkinson. (1995). New chemistry for selective reactive ion etching of InGaAs and InP over InAlAs in SiCl4/SiF4/HBr plasmas. Applied Physics Letters. 67(18). 2660–2662. 10 indexed citations

17.

Murad, S., et al.. (1995). Damage free and selective RIE of GaAs/AlGaAs in SiCl4/SiF4 plasma for MESFET and pseudomorphic HEMT's gate recess etching. Microelectronic Engineering. 27(1-4). 439–444. 3 indexed citations

18.

Murad, S., C.D.W. Wilkinson, & S. P. Beaumont. (1994). Selective and nonselective RIE of GaAs and AlxGa1−xAs in SiCl4 plasma. Microelectronic Engineering. 23(1-4). 357–360. 9 indexed citations

19.

Murad, S., et al.. (1993). Very low damage etching of GaAs. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 11(6). 2237–2243. 11 indexed citations

20.

Johnson, Nigel P., M.A. Foad, S. Murad, M. Holland, & C.D.W. Wilkinson. (1993). Deep Levels Induced by SiCI₄ Reactive Ion Etching in GaAs. MRS Proceedings. 325. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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