D. A. Zakheim

674 total citations
32 papers, 584 citations indexed

About

D. A. Zakheim is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, D. A. Zakheim has authored 32 papers receiving a total of 584 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Condensed Matter Physics, 15 papers in Atomic and Molecular Physics, and Optics and 15 papers in Materials Chemistry. Recurrent topics in D. A. Zakheim's work include GaN-based semiconductor devices and materials (24 papers), Semiconductor Quantum Structures and Devices (12 papers) and ZnO doping and properties (9 papers). D. A. Zakheim is often cited by papers focused on GaN-based semiconductor devices and materials (24 papers), Semiconductor Quantum Structures and Devices (12 papers) and ZnO doping and properties (9 papers). D. A. Zakheim collaborates with scholars based in Russia, United States and Ukraine. D. A. Zakheim's co-authors include I. V. Rozhansky, A. S. Pavluchenko, С. А. Гуревич, V. Zabelin, S. Yu. Karpov, K. A. Bulashevich, A. F. Tsatsul’nikov, James A. Russell, E. E. Zavarin and W. V. Lundin and has published in prestigious journals such as The Journal of Chemical Physics, Nanotechnology and IEEE Journal of Quantum Electronics.

In The Last Decade

D. A. Zakheim

32 papers receiving 545 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D. A. Zakheim Russia 11 470 351 230 179 160 32 584
G. Franssen Poland 15 486 1.0× 312 0.9× 189 0.8× 173 1.0× 184 1.1× 43 557
Z. Vashaei United States 16 446 0.9× 234 0.7× 326 1.4× 260 1.5× 324 2.0× 34 818
Yawara Kaneko Japan 11 662 1.4× 456 1.3× 303 1.3× 234 1.3× 248 1.6× 15 827
E. V. Lutsenko Belarus 14 397 0.8× 259 0.7× 340 1.5× 251 1.4× 256 1.6× 77 656
S. Golka Austria 17 444 0.9× 394 1.1× 147 0.6× 449 2.5× 185 1.2× 45 778
Д. М. Берча Poland 15 164 0.3× 345 1.0× 315 1.4× 415 2.3× 116 0.7× 87 675
Beomdu Lim United States 13 520 1.1× 188 0.5× 213 0.9× 183 1.0× 402 2.5× 25 766
Alon Vardi United States 20 276 0.6× 372 1.1× 265 1.2× 719 4.0× 99 0.6× 52 1.0k
J. Primot France 13 335 0.7× 340 1.0× 207 0.9× 228 1.3× 201 1.3× 30 690
R. Mickevičius United States 15 441 0.9× 443 1.3× 149 0.6× 721 4.0× 193 1.2× 59 937

Countries citing papers authored by D. A. Zakheim

Since Specialization
Citations

This map shows the geographic impact of D. A. Zakheim's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. A. Zakheim with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. A. Zakheim more than expected).

Fields of papers citing papers by D. A. Zakheim

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. A. Zakheim. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. A. Zakheim. The network helps show where D. A. Zakheim may publish in the future.

Co-authorship network of co-authors of D. A. Zakheim

This figure shows the co-authorship network connecting the top 25 collaborators of D. A. Zakheim. A scholar is included among the top collaborators of D. A. Zakheim based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. A. Zakheim. D. A. Zakheim is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sakharov, A. V., W. V. Lundin, E. E. Zavarin, et al.. (2021). InAlN/GaN and AlGaN/GaN HEMT technologies comparison for microwave applications. IOP Conference Series Materials Science and Engineering. 1019(1). 12071–12071. 5 indexed citations
2.
Sakharov, A. V., W. V. Lundin, E. E. Zavarin, et al.. (2020). Influence of doping profile of GaN:Fe buffer layer on the properties of AlGaN/AlN/GaN heterostructures for high-electron mobility transistors. Journal of Physics Conference Series. 1697(1). 12206–12206. 11 indexed citations
3.
Lebedev, A. A., V. Yu. Davydov, A. N. Smirnov, et al.. (2020). Proton irradiation effects on GaN-based epitaxial structures. Journal of Physics Conference Series. 1697(1). 12073–12073. 5 indexed citations
4.
Sakharov, A. V., et al.. (2019). Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells. Semiconductors. 53(14). 1900–1903. 3 indexed citations
5.
Sakharov, A. V., et al.. (2019). Carrier mobility in the channel of AlGaN/(AlN)/GaN and InAlN/(AlN)/GaN heterostructures, limited by different scattering mechanisms: experiment and calculation. Journal of Physics Conference Series. 1400(7). 77009–77009. 6 indexed citations
6.
Sakharov, A. V., W. V. Lundin, E. E. Zavarin, et al.. (2018). Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs. Semiconductors. 52(14). 1843–1845. 3 indexed citations
7.
Karpov, S. Yu., D. A. Zakheim, W. V. Lundin, et al.. (2018). Barrier height modification and mechanism of carrier transport in Ni/in situgrown Si3N4/n-GaN Schottky contacts. Semiconductor Science and Technology. 33(2). 25009–25009. 6 indexed citations
8.
Zakheim, D. A., W. V. Lundin, A. V. Sakharov, et al.. (2018). Dependence of leakage current in Ni/Si3N4/n-GaN Schottky diodes on deposition conditions of silicon nitride. Semiconductor Science and Technology. 33(11). 115008–115008. 6 indexed citations
9.
Lundin, W. V., E. E. Zavarin, A. V. Sakharov, et al.. (2018). Growth of III-N/graphene heterostructures in single vapor phase epitaxial process. Journal of Crystal Growth. 504. 1–6. 14 indexed citations
10.
Markov, L. K., et al.. (2016). Technique for forming ITO films with a controlled refractive index. Semiconductors. 50(7). 984–988. 8 indexed citations
11.
Zakheim, D. A., et al.. (2015). High power blue AlGaInN LED chips with two‐level metallization. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 12(4-5). 381–384. 4 indexed citations
12.
Markov, L. K., et al.. (2014). Use of double-layer ITO films in reflective contacts for blue and near-UV LEDs. Semiconductors. 48(12). 1674–1679. 4 indexed citations
13.
Zakheim, D. A., et al.. (2012). Efficiency droop suppression in InGaN‐based blue LEDs: Experiment and numerical modelling. physica status solidi (a). 209(3). 456–460. 46 indexed citations
14.
Markov, L. K., et al.. (2006). Blue flip-chip AlGaInN LEDs with removed sapphire substrate. Semiconductors. 40(11). 1363–1367. 6 indexed citations
15.
Zakheim, D. A., et al.. (2005). High-power flip-chip blue light-emitting diodes based on AlGaInN. Semiconductors. 39(7). 851–855. 9 indexed citations
16.
Zakheim, D. A., et al.. (2005). Simulation of the electrical properties of polycrystalline ceramic semiconductors with submicrometer grain sizes. Semiconductors. 39(5). 577–584. 7 indexed citations
17.
Zabelin, V., D. A. Zakheim, & С. А. Гуревич. (2004). Efficiency improvement of AlGaInN LEDs advanced by ray-tracing analysis. IEEE Journal of Quantum Electronics. 40(12). 1675–1686. 31 indexed citations
18.
Zakheim, D. A., I. V. Rozhansky, & С. А. Гуревич. (2003). Monte-Carlo simulation of electron transport and field effect in granular metal nanostructures. Microelectronic Engineering. 69(2-4). 646–652. 2 indexed citations
19.
Zakheim, D. A., I. V. Rozhansky, & С. А. Гуревич. (2003). Field effect in granular metal films. Nanotechnology. 14(3). 366–370. 3 indexed citations
20.
McCrary, V. R., et al.. (1985). Coaxial measurement of the translational energy distribution of CS produced in the laser photolysis of CS2 at 193 nm. The Journal of Chemical Physics. 83(7). 3481–3490. 43 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by G. Franssen Breakdown of academic impact, for papers by Z. Vashaei Breakdown of academic impact, for papers by Yawara Kaneko Breakdown of academic impact, for papers by E. V. Lutsenko Breakdown of academic impact, for papers by S. Golka Breakdown of academic impact, for papers by Д. М. Берча Breakdown of academic impact, for papers by Beomdu Lim Breakdown of academic impact, for papers by Alon Vardi Breakdown of academic impact, for papers by J. Primot Breakdown of academic impact, for papers by R. Mickevičius
Rankless by CCL
2026