Thomas Holtij

445 total citations
28 papers, 367 citations indexed

About

Thomas Holtij is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Mechanical Engineering. According to data from OpenAlex, Thomas Holtij has authored 28 papers receiving a total of 367 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 2 papers in Atomic and Molecular Physics, and Optics and 1 paper in Mechanical Engineering. Recurrent topics in Thomas Holtij's work include Advancements in Semiconductor Devices and Circuit Design (27 papers), Semiconductor materials and devices (25 papers) and Silicon Carbide Semiconductor Technologies (23 papers). Thomas Holtij is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (27 papers), Semiconductor materials and devices (25 papers) and Silicon Carbide Semiconductor Technologies (23 papers). Thomas Holtij collaborates with scholars based in Germany and Spain. Thomas Holtij's co-authors include Alexander Kloes, Benjamı́n Iñı́guez, Mike Schwarz and Michael Graef and has published in prestigious journals such as IEEE Transactions on Electron Devices, Solid-State Electronics and IETE Journal of Research.

In The Last Decade

Thomas Holtij

28 papers receiving 365 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Thomas Holtij Germany 11 367 56 24 3 1 28 367
Sheng‐Lyang Jang Taiwan 16 531 1.4× 59 1.1× 25 1.0× 4 1.3× 56 538
P. Llinarès France 13 307 0.8× 60 1.1× 31 1.3× 4 1.3× 1 1.0× 27 308
Akram Salman United States 11 446 1.2× 49 0.9× 15 0.6× 5 1.7× 53 453
Chang-Tsung Fu Taiwan 9 298 0.8× 82 1.5× 13 0.5× 2 0.7× 12 301
Marco Sosio Italy 11 354 1.0× 113 2.0× 14 0.6× 3 1.0× 20 355
S. Asgaran Canada 9 344 0.9× 53 0.9× 14 0.6× 2 0.7× 14 346
Émilie Bernard France 9 180 0.5× 64 1.1× 17 0.7× 7 2.3× 16 193
Weize Xiong United States 8 347 0.9× 94 1.7× 24 1.0× 9 3.0× 13 351
Luca Vandi Denmark 4 284 0.8× 96 1.7× 28 1.2× 2 0.7× 6 291
Baohong Cheng United States 11 328 0.9× 66 1.2× 11 0.5× 2 0.7× 1 1.0× 11 331

Countries citing papers authored by Thomas Holtij

Since Specialization
Citations

This map shows the geographic impact of Thomas Holtij's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Thomas Holtij with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Thomas Holtij more than expected).

Fields of papers citing papers by Thomas Holtij

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Thomas Holtij. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Thomas Holtij. The network helps show where Thomas Holtij may publish in the future.

Co-authorship network of co-authors of Thomas Holtij

This figure shows the co-authorship network connecting the top 25 collaborators of Thomas Holtij. A scholar is included among the top collaborators of Thomas Holtij based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Thomas Holtij. Thomas Holtij is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Holtij, Thomas, et al.. (2017). Effects of Influencing the Individual Leg Inductance in Case of Paralleling Modules on Basis of XHP 3 and EconoDUAL. 1–6. 3 indexed citations
2.
Holtij, Thomas, Alexander Kloes, & Benjamı́n Iñı́guez. (2015). 3-D compact model for nanoscale junctionless triple-gate nanowire MOSFETs, including simple treatment of quantization effects. Solid-State Electronics. 112. 85–98. 13 indexed citations
3.
Graef, Michael, et al.. (2014). A 2D closed form model for the electrostatics in hetero-junction double-gate tunnel-FETs for calculation of band-to-band tunneling current. Microelectronics Journal. 45(9). 1144–1153. 26 indexed citations
4.
Holtij, Thomas, et al.. (2013). Unified charge model for short-channel junctionless double gate MOSFETs. International Conference Mixed Design of Integrated Circuits and Systems. 75–80. 1 indexed citations
5.
Graef, Michael, et al.. (2013). Two-dimensional physics-based modeling of electrostatics and band-to-band tunneling in tunnel-FETs. International Conference Mixed Design of Integrated Circuits and Systems. 81–85. 3 indexed citations
6.
Graef, Michael, et al.. (2013). Two-dimensional bias dependent model for the screening length in double-gate Tunnel-FETs. 29–32. 1 indexed citations
7.
Schwarz, Mike, Thomas Holtij, Alexander Kloes, & Benjamı́n Iñı́guez. (2013). Performance Study of a Schottky Barrier Double-Gate MOSFET Using a Two-Dimensional Analytical Model. IEEE Transactions on Electron Devices. 60(2). 884–886. 3 indexed citations
8.
Holtij, Thomas, et al.. (2013). Compact Model for Short-Channel Junctionless Accumulation Mode Double Gate MOSFETs. IEEE Transactions on Electron Devices. 61(2). 288–299. 90 indexed citations
9.
Schwarz, Mike, Thomas Holtij, Alexander Kloes, & Benjamı́n Iñı́guez. (2013). Compact modeling solutions for short-channel SOI Schottky barrier MOSFETs. Solid-State Electronics. 82. 86–98. 10 indexed citations
10.
Holtij, Thomas, Mike Schwarz, Alexander Kloes, & Benjamı́n Iñı́guez. (2013). Threshold voltage, and 2D potential modeling within short-channel junctionless DG MOSFETs in subthreshold region. Solid-State Electronics. 90. 107–115. 47 indexed citations
11.
Schwarz, Mike, Thomas Holtij, Alexander Kloes, & Benjamı́n Iñı́guez. (2012). Two-dimensional physics-based modeling of dopant-segregated Schottky barrier UTB MOSFETs. International Conference Mixed Design of Integrated Circuits and Systems. 88–93. 2 indexed citations
12.
Schwarz, Mike, Alexander Kloes, Thomas Holtij, & Benjamı́n Iñı́guez. (2012). Complex 2D Electric Field Solution in Undoped Double-gate MOSFETs. IETE Journal of Research. 58(3). 197–197. 1 indexed citations
13.
Holtij, Thomas, Mike Schwarz, Alexander Kloes, & Benjamı́n Iñı́guez. (2012). 2D analytical potential modeling of junctionless DG MOSFETs in subthreshold region including proposal for calculating the threshold voltage. 81–84. 25 indexed citations
14.
Schwarz, Mike, Thomas Holtij, Alexander Kloes, & Benjamı́n Iñı́guez. (2012). Explicit model for tunneling and thermionic current in Schottky barrier Double-Gate MOSFETs. 133–136. 1 indexed citations
15.
Kloes, Alexander, Mike Schwarz, & Thomas Holtij. (2012). $\hbox{MOS}^{3}$: A New Physics-Based Explicit Compact Model for Lightly Doped Short-Channel Triple-Gate SOI MOSFETs. IEEE Transactions on Electron Devices. 59(2). 349–358. 30 indexed citations
16.
Schwarz, Mike, Thomas Holtij, Alexander Kloes, & Benjamı́n Iñı́guez. (2012). Analytical compact modeling framework for the 2D electrostatics in lightly doped double-gate MOSFETs. Solid-State Electronics. 69. 72–84. 29 indexed citations
17.
Schwarz, Mike, Thomas Holtij, Alexander Kloes, & Benjamı́n Iñı́guez. (2011). 2D analytical framework for compact modeling of the electrostatics in undoped DG MOSFETs. International Conference Mixed Design of Integrated Circuits and Systems. 405–410. 3 indexed citations
18.
Holtij, Thomas, Mike Schwarz, Alexander Kloes, & Benjamı́n Iñı́guez. (2011). 2D Analytical calculation of the source/drain access resistance in DG-MOSFET structures. 1–4. 1 indexed citations
19.
Schwarz, Mike, Thomas Holtij, Alexander Kloes, & Benjamı́n Iñı́guez. (2011). 2D analytical DC model for nanoscale Schottky barrier DG-MOSFETs. 1–2. 2 indexed citations
20.
Schwarz, Mike, Thomas Holtij, Alexander Kloes, & Benjamı́n Iñı́guez. (2011). 2D Analysis of source/drain carrier tunneling in lightly doped Schottky barrier DG-MOSFETs using a fully analytical model. 1–4. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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