B. E. Deal

6.9k total citations · 2 hit papers
37 papers, 5.2k citations indexed

About

B. E. Deal is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, B. E. Deal has authored 37 papers receiving a total of 5.2k indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Electrical and Electronic Engineering, 10 papers in Materials Chemistry and 8 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in B. E. Deal's work include Semiconductor materials and devices (28 papers), Silicon and Solar Cell Technologies (15 papers) and Semiconductor materials and interfaces (8 papers). B. E. Deal is often cited by papers focused on Semiconductor materials and devices (28 papers), Silicon and Solar Cell Technologies (15 papers) and Semiconductor materials and interfaces (8 papers). B. E. Deal collaborates with scholars based in United States, Germany and Israel. B. E. Deal's co-authors include Andrew S. Grove, E. H. Snow, C. T. Sah, Michael C. Sklar, Carver Mead, C. R. Helms, Dennis W. Hess, J.D. Plummer, Chu Po Ho and Dah-Bin Kao and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

B. E. Deal

37 papers receiving 4.8k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

General Relationship for the Thermal Oxidation of Silicon

1965 2.6k citations B. E. Deal, Andrew S. Grove Journal of Applied Physics profile →
Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized Silicon

1967 542 citations B. E. Deal, Michael C. Sklar et al. Journal of The Electrochemical Society profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
B. E. Deal United States	20	4.2k	2.0k	1.3k	666	598	37	5.2k
E. A. Irene United States	41	4.6k 1.1×	2.7k 1.3×	1.3k 1.0×	335 0.5×	930 1.6×	215	5.8k
Yoshihiro Hamakawa Japan	48	7.3k 1.8×	6.2k 3.2×	2.3k 1.8×	332 0.5×	1.0k 1.7×	492	9.4k
D. G. Ast United States	29	1.5k 0.4×	1.2k 0.6×	930 0.7×	172 0.3×	332 0.6×	151	2.7k
Kazutaka Mitsuishi Japan	33	1.9k 0.5×	1.6k 0.8×	874 0.7×	211 0.3×	608 1.0×	258	4.1k
Y.G. Shen Hong Kong	36	1.2k 0.3×	3.0k 1.5×	602 0.5×	410 0.6×	563 0.9×	199	4.7k
J. C. Bravman United States	36	2.0k 0.5×	1.7k 0.8×	1.2k 0.9×	113 0.2×	814 1.4×	163	4.7k
J.N. Zemel United States	31	1.9k 0.5×	944 0.5×	952 0.7×	71 0.1×	876 1.5×	124	3.7k
Wood-Hi Cheng Taiwan	32	2.4k 0.6×	933 0.5×	880 0.7×	194 0.3×	494 0.8×	300	3.5k
C. R. Wroński United States	37	7.3k 1.8×	6.0k 3.0×	1.1k 0.8×	339 0.5×	763 1.3×	168	8.4k
T. T. Sheng United States	30	2.4k 0.6×	892 0.5×	1.3k 1.0×	68 0.1×	462 0.8×	127	3.2k

Countries citing papers authored by B. E. Deal

Since Specialization

Citations

This map shows the geographic impact of B. E. Deal's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. E. Deal with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. E. Deal more than expected).

Fields of papers citing papers by B. E. Deal

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. E. Deal. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. E. Deal. The network helps show where B. E. Deal may publish in the future.

Co-authorship network of co-authors of B. E. Deal

This figure shows the co-authorship network connecting the top 25 collaborators of B. E. Deal. A scholar is included among the top collaborators of B. E. Deal based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. E. Deal. B. E. Deal is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Shacham‐Diamand, Yosi, et al.. (2000). Protection of Silicon Wafers from Alkali Contamination during High-Temperature Processing Using Electric Field. Journal of The Electrochemical Society. 147(10). 3892–3892. 2 indexed citations

Helms, C. R. & B. E. Deal. (1992). Mechanisms of the HF/H 2 O vapor phase etching of SiO 2. 10(4). 806–811. 2 indexed citations

Helms, C. R. & B. E. Deal. (1992). Mechanisms of the HF/H2O vapor phase etching of SiO2. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 10(4). 806–811. 67 indexed citations

Kao, Dah-Bin, et al.. (1991). The Effect of Aqueous Chemical Cleaning on Si (100) Dry Oxidation Kinetics. Journal of The Electrochemical Society. 138(8). 2353–2361. 7 indexed citations

Kao, Dah-Bin, et al.. (1989). Effect of SiO2 surface chemistry on the oxidation of silicon. Applied Physics Letters. 54(8). 715–717. 34 indexed citations

Kao, Dah-Bin, et al.. (1989). A Study of the Breakdown Testing of Thermal Silicon Oxides and the Efects of Preoxidation Surface Treatment. Reliability physics. 9–16. 6 indexed citations

Joshi, Anand, et al.. (1984). Screening energy variations in silicon, silicon dioxide, and silicides. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 2(2). 107–112. 19 indexed citations

Hess, Dennis W. & B. E. Deal. (1977). Kinetics of the Thermal Oxidation of Silicon in O 2 / HCl Mixtures. Journal of The Electrochemical Society. 124(5). 735–739. 53 indexed citations

Deal, B. E.. (1977). Invited: New Developments in Materials and Processing Aspects of Silicon Device Technology. Japanese Journal of Applied Physics. 16(S1). 29–29. 3 indexed citations

10.

Hess, Dennis W. & B. E. Deal. (1975). Effect of Nitrogen and Oxygen/Nitrogen Mixtures on Oxide Charges in MOS Structures. Journal of The Electrochemical Society. 122(8). 1123–1127. 13 indexed citations

11.

Kamins, T. I. & B. E. Deal. (1975). Characteristics of Si ‐ SiO2 Interfaces Beneath Thin Silicon Films Defined by Electrochemical Etching. Journal of The Electrochemical Society. 122(4). 557–560. 3 indexed citations

12.

Deal, B. E., et al.. (1971). Low-Temperature Reduction of Fast Surface States Associated with Thermally Oxidized Silicon. Journal of The Electrochemical Society. 118(2). 280–280. 83 indexed citations

13.

Deal, B. E., et al.. (1969). Characteristics of Fast Surface States Associated with SiO[sub 2]-Si and Si[sub 3]N[sub 4]-SiO[sub 2]-Si Structures. Journal of The Electrochemical Society. 116(7). 997–997. 124 indexed citations

14.

Deal, B. E. & Michael C. Sklar. (1965). Thermal Oxidation of Heavily Doped Silicon. Journal of The Electrochemical Society. 112(4). 430–430. 82 indexed citations

15.

Deal, B. E., Andrew S. Grove, E. H. Snow, & C. T. Sah. (1965). Observation of Impurity Redistribution During Thermal Oxidation of Silicon Using the MOS Structure. Journal of The Electrochemical Society. 112(3). 308–308. 92 indexed citations

16.

Snow, E. H., Andrew S. Grove, B. E. Deal, & C. T. Sah. (1965). Ion Transport Phenomena in Insulating Films. Journal of Applied Physics. 36(5). 1664–1673. 401 indexed citations

17.

Grove, Andrew S., B. E. Deal, E. H. Snow, & C. T. Sah. (1965). Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structures. Solid-State Electronics. 8(2). 145–163. 336 indexed citations

18.

Deal, B. E. & Andrew S. Grove. (1965). General Relationship for the Thermal Oxidation of Silicon. Journal of Applied Physics. 36(12). 3770–3778. 2594 indexed citations breakdown →

19.

Grove, Andrew S., E. H. Snow, B. E. Deal, & C. T. Sah. (1964). Simple Physical Model for the Space-Charge Capacitance of Metal-Oxide-Semiconductor Structures. Journal of Applied Physics. 35(8). 2458–2460. 56 indexed citations

20.

Grove, Andrew S., B. E. Deal, E. H. Snow, & C. T. Sah. (1964). Investigation of thermally oxidized silicon surfaces using metal-oxide-semiconductor structures. IEEE Transactions on Electron Devices. 11(11). 531–531. 19 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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