A.S. Barrière

627 total citations
64 papers, 544 citations indexed

About

A.S. Barrière is a scholar working on Materials Chemistry, Inorganic Chemistry and Electrical and Electronic Engineering. According to data from OpenAlex, A.S. Barrière has authored 64 papers receiving a total of 544 indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Materials Chemistry, 30 papers in Inorganic Chemistry and 22 papers in Electrical and Electronic Engineering. Recurrent topics in A.S. Barrière's work include Inorganic Fluorides and Related Compounds (30 papers), Ga2O3 and related materials (16 papers) and Luminescence Properties of Advanced Materials (11 papers). A.S. Barrière is often cited by papers focused on Inorganic Fluorides and Related Compounds (30 papers), Ga2O3 and related materials (16 papers) and Luminescence Properties of Advanced Materials (11 papers). A.S. Barrière collaborates with scholars based in France, Morocco and Guadeloupe. A.S. Barrière's co-authors include Lionel Hirsch, J. Salardenne, G. Couturier, Guillaume Wantz, N. Huby, J. P. Parneix, Y. Danto, Laurence Vignau, Luis Javier Lozano Blanco and S. Raoux and has published in prestigious journals such as Journal of Applied Physics, Applied Surface Science and Surface Science.

In The Last Decade

A.S. Barrière

62 papers receiving 502 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A.S. Barrière France 13 314 261 144 138 133 64 544
J. Yurkas United States 6 222 0.7× 338 1.3× 39 0.3× 110 0.8× 95 0.7× 9 551
Yu. M. Yarmoshenko Russia 17 290 0.9× 519 2.0× 114 0.8× 413 3.0× 160 1.2× 62 838
V. M. Cherkashenko Russia 10 152 0.5× 277 1.1× 39 0.3× 148 1.1× 39 0.3× 37 475
S. I. Shah United States 13 252 0.8× 294 1.1× 40 0.3× 123 0.9× 142 1.1× 21 508
K. Kushida Japan 18 437 1.4× 514 2.0× 98 0.7× 329 2.4× 177 1.3× 67 840
G. Schiffmacher France 12 65 0.2× 294 1.1× 62 0.4× 187 1.4× 64 0.5× 31 472
H. Belkhir Algeria 13 237 0.8× 378 1.4× 45 0.3× 157 1.1× 127 1.0× 30 541
T. Miyano Japan 12 123 0.4× 233 0.9× 18 0.1× 43 0.3× 165 1.2× 22 464
A.S. Nigavekar India 12 142 0.5× 218 0.8× 16 0.1× 80 0.6× 124 0.9× 45 410
J. Zemek Czechia 13 255 0.8× 215 0.8× 12 0.1× 69 0.5× 110 0.8× 37 471

Countries citing papers authored by A.S. Barrière

Since Specialization
Citations

This map shows the geographic impact of A.S. Barrière's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A.S. Barrière with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A.S. Barrière more than expected).

Fields of papers citing papers by A.S. Barrière

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A.S. Barrière. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A.S. Barrière. The network helps show where A.S. Barrière may publish in the future.

Co-authorship network of co-authors of A.S. Barrière

This figure shows the co-authorship network connecting the top 25 collaborators of A.S. Barrière. A scholar is included among the top collaborators of A.S. Barrière based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A.S. Barrière. A.S. Barrière is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hirsch, Lionel, F. Natali, P. Moretto, et al.. (2003). RBS studies of AlGaN/AlN Bragg reflectors. physica status solidi (a). 195(3). 502–507. 3 indexed citations
2.
3.
Tardy, Pascal, et al.. (1999). Study of Ca1−xPrxF2+x solid solution thin films grown on silicon substrates. Thin Solid Films. 347(1-2). 127–132. 5 indexed citations
4.
Hirsch, Lionel, A.S. Barrière, J. Salardenne, & J.M. Réau. (1998). Electrical characterization of Ca1−xErxF2+x luminescent thin films. Journal of Applied Physics. 83(12). 7813–7821. 3 indexed citations
5.
Barrière, A.S., et al.. (1993). Study of a chemical cleaning of InP(100) substrates by infrared absorption and nuclear reaction analysis. Applied Surface Science. 64(3). 225–230. 7 indexed citations
6.
Barrière, A.S., et al.. (1991). Composition and texture of thin films grown under 1 bar of fluorine at the surface of GaAs. Thin Solid Films. 196(1). 65–73. 4 indexed citations
7.
Barrière, A.S., et al.. (1990). Interface GaAs - gallium fluoride thin film grown by fluorination. Applied Surface Science. 41-42. 383–389. 11 indexed citations
8.
Couturier, G., et al.. (1989). The base line problem in DLTS technique. Revue de Physique Appliquée. 24(2). 243–249. 4 indexed citations
9.
Barrière, A.S., et al.. (1988). Caractérisation physico-chimique et électrique de structures fluorure — semi-conducteur III-V (passivation de GaAs et InP). Revue de Physique Appliquée. 23(1). 63–70. 4 indexed citations
10.
Couturier, G., et al.. (1987). A study of the chemical oxide/InP interface by deep-level transient spectroscopy. Journal of Applied Physics. 62(9). 3857–3859. 12 indexed citations
11.
Couturier, G., et al.. (1987). Electrical properties of SrF2/InP (100) diodes and SrF2 thin films. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 5(4). 870–875. 10 indexed citations
12.
Barrière, A.S., et al.. (1985). Hopping Conduction in NiF2 Thin Films as a Function of Their Crystallization Degree and Composition. physica status solidi (a). 91(1). 257–270. 1 indexed citations
13.
14.
Barrière, A.S., J. C. Gianduzzo, & L. Fournès. (1982). Magnetic and Mössbauer resonance studies of FeF3 thin films as a function of their growth model. Thin Solid Films. 89(3). 233–238. 4 indexed citations
15.
Barrière, A.S., J. Pichon, & J. Salardenne. (1982). Thin film polarization model based on inhomogeneous repartition of localized electronic states. Thin Solid Films. 89(1). 89–94. 2 indexed citations
16.
Pichon, J., J. Salardenne, & A.S. Barrière. (1982). Study of Electronic Localized States Responsible of the Polarization of FeF3 Thin Films. physica status solidi (a). 69(2). 699–706. 5 indexed citations
17.
Barrière, A.S., et al.. (1981). Study of crystallization defects in FeF3 thin films by Mössbauer spectrometry. Journal of Crystal Growth. 52. 989–994. 2 indexed citations
18.
19.
Chemin, J. F., et al.. (1975). Simultaneous observation of Rutherford scattering and ( α,X) reactions in AlF3and MgF2layers and correlation with their electrical properties. Journal of Physics D Applied Physics. 8(9). 1008–1020. 12 indexed citations
20.
Barrière, A.S., Y. Danto, & J. Salardenne. (1973). Mécanismes de conduction électrique dans les couches minces de fluorure de magnesium. Thin Solid Films. 16(2). S13–S14. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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