D. L. Rode
-
- Semiconductor Quantum Structures and Devices 20
- Quantum and electron transport phenomena 6
- Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials 8
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- Semiconductor Lasers and Optical Devices 16
- Photonic and Optical Devices 11
- Semiconductor materials and devices 9
- Advancements in Semiconductor Devices and Circuit Design 7
- Materials Chemistry top 10%
- Solidification and crystal growth phenomena 5
- Co-authors
- Stephen KnightD. Kurt GaskillR.D. EsmanRobert R. KrchnavekH.N. BertramW. R. WagnerN. E. SchumakerJ.V. DiLorenzo
- Cited by
- Atomic and Molecular Physics, and OpticsCondensed Matter PhysicsElectrical and Electronic Engineering
- Journals
- Journal of Applied Physics (17 papers)Applied Physics Letters (4 papers)Journal of Crystal Growth (4 papers)
- Partner nations
- United StatesSouth KoreaGermany
In The Last Decade
D. L. Rode
57 papers receiving 1.6k citations
Peers
Comparison fields: 5 of 65
- Atomic and Molecular Physics, and Optics 1.2k
- Condensed Matter Physics 296
- Electrical and Electronic Engineering 1.2k
- Materials Chemistry 636
- Electronic, Optical and Magnetic Materials 182
Countries citing papers authored by D. L. Rode
This map shows the geographic impact of D. L. Rode's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. L. Rode with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. L. Rode more than expected).
Fields of papers citing papers by D. L. Rode
This network shows the impact of papers produced by D. L. Rode. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. L. Rode. The network helps show where D. L. Rode may publish in the future.
Co-authorship network
The 25 scholars most cited alongside D. L. Rode, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
| # | Work | ||
|---|---|---|---|
| 1 | 2025 | 1 | |
| 2 | 2011 | 24 | |
| 3 | 2009 | 16 | |
| 4 | 2001 | 57 | |
| 5 | 1997 | 5 | |
| 6 | 1995 | 70 | |
| 7 | 1995 | 6 | |
| 8 | 1988 | 1 | |
| 9 | 1986 | 4 | |
| 10 | 1983 | 11 | |
| 11 | 1979 | 17 | |
| 12 | 1975 | 9 | |
| 13 | 1974 | 42 | |
| 14 | 1974 | 31 | |
| 15 | 1973 | 9 | |
| 16 | 1972 | 15 | |
| 17 | 1970 | 143 | |
| 18 | 1970 | 0 | |
| 19 | 1968 | 1 | |
| 20 | HIGH-DENSITY PLASMA INDUCED BY PULSED MICROWAVE. | 1968 | 1 |
About D. L. Rode
D. L. Rode is a scholar working on Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 62 papers that have together received 1.8k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (20 papers), Semiconductor Lasers and Optical Devices (16 papers), Photonic and Optical Devices (11 papers), Semiconductor materials and devices (9 papers), GaN-based semiconductor devices and materials (8 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers), Quantum and electron transport phenomena (6 papers) and Solidification and crystal growth phenomena (5 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (1.2k citations), Condensed Matter Physics (296 citations), Electrical and Electronic Engineering (1.2k citations), Materials Chemistry (636 citations) and Electronic, Optical and Magnetic Materials (182 citations). D. L. Rode has collaborated with scholars based in United States, South Korea and Germany. Frequent co-authors include Stephen Knight, D. Kurt Gaskill, R.D. Esman, Robert R. Krchnavek, H.N. Bertram, W. R. Wagner, N. E. Schumaker, J.V. DiLorenzo, Martin A. Afromowitz and L. R. Dawson. Their work appears in journals such as Journal of Applied Physics, Applied Physics Letters, Journal of Crystal Growth, Journal of Lightwave Technology and Solid-State Electronics.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.