D. L. Rode

2.5k total citations
62 papers, 1.8k citations indexed

About

D. L. Rode is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, D. L. Rode has authored 62 papers receiving a total of 1.8k indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Electrical and Electronic Engineering, 34 papers in Atomic and Molecular Physics, and Optics and 15 papers in Materials Chemistry. Recurrent topics in D. L. Rode's work include Semiconductor Quantum Structures and Devices (20 papers), Semiconductor Lasers and Optical Devices (16 papers) and Photonic and Optical Devices (11 papers). D. L. Rode is often cited by papers focused on Semiconductor Quantum Structures and Devices (20 papers), Semiconductor Lasers and Optical Devices (16 papers) and Photonic and Optical Devices (11 papers). D. L. Rode collaborates with scholars based in United States, South Korea and Germany. D. L. Rode's co-authors include Stephen Knight, D. Kurt Gaskill, R.D. Esman, Robert R. Krchnavek, H.N. Bertram, W. R. Wagner, N. E. Schumaker, J.V. DiLorenzo, Martin A. Afromowitz and L. R. Dawson and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Proceedings of the IEEE.

In The Last Decade

D. L. Rode

57 papers receiving 1.6k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
D. L. Rode United States	20	1.2k	1.2k	636	296	193	62	1.8k
A.C. Warren United States	24	1.4k 1.2×	1.5k 1.3×	582 0.9×	253 0.9×	208 1.1×	46	2.0k
J. E. Epler United States	19	1.0k 0.9×	1.1k 1.0×	393 0.6×	553 1.9×	190 1.0×	74	1.6k
D. L. Partin United States	22	973 0.8×	837 0.7×	583 0.9×	230 0.8×	119 0.6×	92	1.4k
E. Finkman Israel	26	1.6k 1.4×	1.9k 1.6×	824 1.3×	263 0.9×	207 1.1×	95	2.4k
F. Mollot France	25	1.7k 1.4×	1.5k 1.3×	500 0.8×	202 0.7×	220 1.1×	138	2.2k
H.L. Hartnagel Germany	21	866 0.7×	1.4k 1.2×	519 0.8×	299 1.0×	442 2.3×	247	2.0k
M. H. Pilkuhn Germany	28	1.8k 1.5×	1.7k 1.5×	633 1.0×	240 0.8×	201 1.0×	102	2.2k
J. Heydenreich Germany	19	2.6k 2.2×	2.2k 1.9×	1.3k 2.0×	235 0.8×	327 1.7×	83	3.1k
G. Bauer Austria	24	1.9k 1.6×	1.5k 1.3×	992 1.6×	324 1.1×	487 2.5×	83	2.5k
G. C. Osbourn United States	26	1.7k 1.5×	1.6k 1.4×	668 1.1×	213 0.7×	302 1.6×	81	2.3k

Countries citing papers authored by D. L. Rode

Since Specialization

Citations

This map shows the geographic impact of D. L. Rode's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. L. Rode with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. L. Rode more than expected).

Fields of papers citing papers by D. L. Rode

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. L. Rode. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. L. Rode. The network helps show where D. L. Rode may publish in the future.

Co-authorship network of co-authors of D. L. Rode

This figure shows the co-authorship network connecting the top 25 collaborators of D. L. Rode. A scholar is included among the top collaborators of D. L. Rode based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. L. Rode. D. L. Rode is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Ferry, D. K. & D. L. Rode. (2025). Physical and electrical properties of silica. Applied Physics Reviews. 12(1). 1 indexed citations

Yang, Xiaofeng, D. L. Rode, Darcy S. Peterka, Rafael Yuste, & Steven M. Rothman. (2011). Optical control of focal epilepsy in vivo with caged γ‐aminobutyric acid. Annals of Neurology. 71(1). 68–75. 24 indexed citations

Yang, Xiaofeng, Brigitte F. Schmidt, D. L. Rode, & Steven M. Rothman. (2009). Optical suppression of experimental seizures in rat brain slices. Epilepsia. 51(1). 127–135. 16 indexed citations

Huang, Daming, Feng Yun, M. A. Reshchikov, et al.. (2001). Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy. Solid-State Electronics. 45(5). 711–715. 57 indexed citations

Rode, D. L., et al.. (1997). Highly efficient coupling between single-mode fiber and polymer optical waveguides. IEEE Transactions on Components Packaging and Manufacturing Technology Part B. 20(3). 225–228. 5 indexed citations

Rode, D. L. & D. Kurt Gaskill. (1995). Electron Hall mobility of n-GaN. Applied Physics Letters. 66(15). 1972–1973. 70 indexed citations

Rode, D. L., et al.. (1995). Efficient multimode optical fiber-to-waveguide coupling for passive alignment applications in multichip modules. IEEE Transactions on Components Packaging and Manufacturing Technology Part B. 18(4). 685–690. 6 indexed citations

Rode, D. L., et al.. (1988). Persistent photoconductivity in free-standing layers of n-AlGaAs. Solid-State Electronics. 31(7). 1123–1125. 1 indexed citations

Ballingall, J. M., et al.. (1986). Silicon autocompensation in GaAs grown by molecular-beam epitaxy. Journal of Applied Physics. 59(10). 3571–3573. 4 indexed citations

10.

Rode, D. L. & P. A. Fedders. (1983). Electron scattering in semiconductor alloys. Journal of Applied Physics. 54(11). 6425–6431. 11 indexed citations

11.

Nelson, R. J. & D. L. Rode. (1979). Nonradiative recombination in GaAlAs proton-bombarded stripe-geometry lasers. Journal of Applied Physics. 50(8). 5135–5138. 17 indexed citations

12.

Rode, D. L., Robert L. Brown, & Martin A. Afromowitz. (1975). Measurement of lattice dilatation in LPE GaAs due to Ge acceptor doping. Journal of Crystal Growth. 30(3). 299–303. 9 indexed citations

13.

Rode, D. L.. (1974). How much Al in the AlGaAs–GaAs laser?. Journal of Applied Physics. 45(9). 3887–3891. 42 indexed citations

14.

Rode, D. L.. (1974). Crystal growth terraces and surface reconstruction. Journal of Crystal Growth. 27. 313–315. 31 indexed citations

15.

Thim, H.W., et al.. (1973). Subnanosecond PCM of GaAs lasers by Gunn-effect switches. 19. 92–93. 9 indexed citations

16.

Rode, D. L. & L. R. Dawson. (1972). Differential I/V of heterostructure correlates with laser threshold. Applied Physics Letters. 21(3). 90–93. 15 indexed citations

17.

Rode, D. L.. (1970). Electron Mobility in II-VI Semiconductors. Physical review. B, Solid state. 2(10). 4036–4044. 143 indexed citations

18.

Rode, D. L. & William A. Johnson. (1970). Crystal Etch Monitoring by Internal Reflection Interferometry. Review of Scientific Instruments. 41(5). 672–675.

19.

Rode, D. L.. (1968). Concentric Spherical Resonator Eigenfrequencies (Correspondence). IEEE Transactions on Microwave Theory and Techniques. 16(6). 369–372. 1 indexed citations

20.

Rode, D. L., et al.. (1968). HIGH-DENSITY PLASMA INDUCED BY PULSED MICROWAVE.. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information). 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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