A. Rebey

1.4k citations

116 papers · 1.2k indexed · h-index 17

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces

Papers in ⓘ

Condensed Matter Physics 46
- GaN-based semiconductor devices and materials 43
Atomic and Molecular Physics, and Optics 94
- Semiconductor Quantum Structures and Devices 87
- Semiconductor materials and interfaces 16
- Quantum and electron transport phenomena 10

Co-authors: B. El Jani (65 shared papers)H. Fitouri (26 shared papers)T. Boufaden (7 shared papers)A. Bchetnia (10 shared papers)Imen Massoudi (11 shared papers)A. Fouzri (2 shared papers)P. Gibart (3 shared papers)Mohamed Bouzidi (6 shared papers)
Journals: Journal of Crystal Growth (15 papers)Superlattices and Microstructures (6 papers)Materials Science in Semiconductor Processing (6 papers)Thin Solid Films (5 papers)Optik (5 papers)
Partner nations: Tunisia Saudi Arabia France

In The Last Decade

A. Rebey

111 papers receiving 1.1k citations

Peers

Countries citing papers authored by A. Rebey

Since Specialization

Citations

This map shows the geographic impact of A. Rebey's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Rebey with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Rebey more than expected).

Fields of papers citing papers by A. Rebey

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Rebey. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Rebey. The network helps show where A. Rebey may publish in the future.

Co-authors

The 25 scholars most cited alongside A. Rebey, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Rebey Line = papers co-authored together A. Rebey links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 116 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	In situ optical monitoring of the decomposition of GaN thin films Journal of Crystal Growth ·A. Rebey, T. Boufaden, B. El Jani	1999	81
2	Atmospheric-pressure metalorganic vapour phase epitaxy optimization of GaAsBi alloy Thin Solid Films ·I. Moussa, H. Fitouri, A. Rebey, B. El Jani	2008	51
3	Photoreflectance and photoluminescence study of annealing effects on GaAsBi layers grown by metalorganic vapor phase epitaxy Semiconductor Science and Technology ·Z. Chine, H. Fitouri, I. Zaied, A. Rebey, B. El Jani	2010	44
4	Electronic band structure calculation of GaNAsBi alloys and effective mass study Infrared Physics & Technology ·M.M. Habchi, Abdelaziz Nasr, A. Rebey, B. El Jani	2013	41
5	AP-MOVPE of thin GaAs1−xBix alloys Journal of Crystal Growth ·H. Fitouri, I. Moussa, A. Rebey, A. Fouzri, B. El Jani	2006	37
6	Effect of thermal annealing on structural and optical properties of the GaAs_0.963Bi_0.037alloy Semiconductor Science and Technology ·I. Moussa, H. Fitouri, Z. Chine, A. Rebey, B. El Jani	2008	36
7	First-principles calculation of the physical properties of GaAs_1-xBi_xalloys Semiconductor Science and Technology ·M. Mbarki, A. Rebey	2011	34
8	Surface analysis of different oriented GaAs substrates annealed under bismuth flow Journal of Crystal Growth ·H. Fitouri, I. Moussa, A. Rebey, B. El Jani	2006	32
9	Stress and density of defects in Si‐doped GaN physica status solidi (a) ·Z. Chine, A. Rebey, Hazem Touati, E. Goovaerts, M. Oueslati, B. El Jani, S. Laügt	2006	31
10	Theoretical study of optoelectronic properties of GaAs 1 − x Bi x alloys using valence band anticrossing model Infrared Physics & Technology ·M.M. Habchi, Abdelaziz Nasr, A. Rebey, B. El Jani	2014	31
11	Photoreflectance and photoluminescence study of localization effects in GaAsBi alloys Optical Materials ·H. Fitouri, Yethreb Essouda, I. Zaied, A. Rebey, B. El Jani	2015	29
12	Ab initio investigation of structural and electronic properties of zinc blende AlN1−xBix alloys Solid State Communications ·M. Mbarki, R. Alaya, A. Rebey	2012	25
13	In situ reflectance monitoring of the growth and etching of AlAs/GaAs structures in MOVPE Journal of Crystal Growth ·A. Rebey, M.M. Habchi, A. Bchetnia, B. El Jani	2003	24
14	Growth of GaAsBi alloy under alternated bismuth flows by metalorganic vapor phase epitaxy Journal of Crystal Growth ·Z. Chine, H. Fitouri, I. Zaied, A. Rebey, B. El Jani	2011	24
15	Study of GaAsBi MOVPE growth on (100) GaAs substrate under high Bi flow rate by high resolution X-ray diffraction Microelectronic Engineering ·H. Fitouri, I. Moussa, A. Rebey, B. El Jani	2010	24
16	First principles calculations of structural and electronic properties of GaN 1−x Bi x alloys Journal of Alloys and Compounds ·M. Mbarki, A. Rebey	2012	19
17	Optical monitoring of the growth rate reduction by CCl4 during metalorganic vapour-phase epitaxy deposition of carbon doped GaAs Journal of Crystal Growth ·A. Rebey, Lotfi Béji, B. El Jani, P. Gibart	1998	16
18	Bismuth catalyzed growth of GaAsBi nanowires by metalorganic vapor phase epitaxy Materials Letters ·Yethreb Essouda, H. Fitouri, R. Boussaha, N. Elayech, A. Rebey, B. El Jani	2015	13
19	Effect of growth temperature and GaAs substrate misorientation on the morphology of InAsBi nanoislands grown by metalorganic vapor phase epitaxy Applied Surface Science ·R. Boussaha, H. Fitouri, A. Rebey, B. El Jani	2013	13
20	Etching of GaAs by CCl4 and VCl4 in a metalorganic vapor-phase epitaxy reactor Journal of Crystal Growth ·A. Rebey, A. Bchetnia, B. El Jani	1998	13

About A. Rebey

A. Rebey is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials, having authored 116 papers that have together received 1.2k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (87 papers), GaN-based semiconductor devices and materials (43 papers), Semiconductor materials and devices (40 papers), Advanced Semiconductor Detectors and Materials (29 papers), ZnO doping and properties (18 papers), Semiconductor materials and interfaces (16 papers), Quantum and electron transport phenomena (10 papers) and Ga2O3 and related materials (9 papers). The work is most often cited by research in Condensed Matter Physics (489 citations), Atomic and Molecular Physics, and Optics (803 citations), Electrical and Electronic Engineering (682 citations), Electronic, Optical and Magnetic Materials (173 citations) and Materials Chemistry (420 citations). A. Rebey has collaborated with scholars based in Tunisia, Saudi Arabia and France. Frequent co-authors include B. El Jani, H. Fitouri, T. Boufaden, A. Bchetnia, Imen Massoudi, A. Fouzri, P. Gibart, Mohamed Bouzidi, E. Goovaerts and Mohamed Hédi Bedoui. Their work appears in journals such as Journal of Crystal Growth, Superlattices and Microstructures, Materials Science in Semiconductor Processing, Thin Solid Films and Optik.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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