A. Rebey

1.4k total citations
116 papers, 1.2k citations indexed

About

A. Rebey is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, A. Rebey has authored 116 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 94 papers in Atomic and Molecular Physics, and Optics, 78 papers in Electrical and Electronic Engineering and 46 papers in Condensed Matter Physics. Recurrent topics in A. Rebey's work include Semiconductor Quantum Structures and Devices (87 papers), GaN-based semiconductor devices and materials (43 papers) and Semiconductor materials and devices (40 papers). A. Rebey is often cited by papers focused on Semiconductor Quantum Structures and Devices (87 papers), GaN-based semiconductor devices and materials (43 papers) and Semiconductor materials and devices (40 papers). A. Rebey collaborates with scholars based in Tunisia, Saudi Arabia and France. A. Rebey's co-authors include B. El Jani, H. Fitouri, T. Boufaden, A. Bchetnia, Imen Massoudi, A. Fouzri, P. Gibart, E. Goovaerts, Mohamed Bouzidi and M. Oueslati and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Materials Science.

In The Last Decade

A. Rebey

111 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Rebey Tunisia 17 803 682 489 420 173 116 1.2k
Shigehiko Hasegawa Japan 17 536 0.7× 427 0.6× 464 0.9× 589 1.4× 286 1.7× 170 1.1k
G. Hatakoshi Japan 18 980 1.2× 960 1.4× 557 1.1× 188 0.4× 86 0.5× 95 1.3k
T.B. Joyce United Kingdom 19 553 0.7× 577 0.8× 438 0.9× 278 0.7× 100 0.6× 71 953
R. A. Stall United States 20 625 0.8× 614 0.9× 571 1.2× 366 0.9× 283 1.6× 66 1.1k
Mohana K. Rajpalke India 19 594 0.7× 707 1.0× 418 0.9× 483 1.1× 295 1.7× 67 1.2k
W. E. Plano United States 13 513 0.6× 596 0.9× 318 0.7× 195 0.5× 119 0.7× 37 846
B. El Jani Tunisia 22 896 1.1× 952 1.4× 1.1k 2.2× 790 1.9× 519 3.0× 147 1.8k
T. Hino Japan 12 510 0.6× 506 0.7× 706 1.4× 400 1.0× 262 1.5× 26 989
Anirban Bhattacharyya United States 20 325 0.4× 413 0.6× 610 1.2× 493 1.2× 456 2.6× 79 1.1k
D.W. Treat United States 18 670 0.8× 690 1.0× 479 1.0× 199 0.5× 146 0.8× 72 1.0k

Countries citing papers authored by A. Rebey

Since Specialization
Citations

This map shows the geographic impact of A. Rebey's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Rebey with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Rebey more than expected).

Fields of papers citing papers by A. Rebey

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Rebey. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Rebey. The network helps show where A. Rebey may publish in the future.

Co-authorship network of co-authors of A. Rebey

This figure shows the co-authorship network connecting the top 25 collaborators of A. Rebey. A scholar is included among the top collaborators of A. Rebey based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Rebey. A. Rebey is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
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2.
Fitouri, H., et al.. (2024). MOVPE growth and characterization of GaAs/GaAsBi/GaAs p-i-n structure. Optical Materials. 155. 115822–115822. 1 indexed citations
3.
Rebey, A., et al.. (2024). Theoretical study of adsorption of Bi on cation-rich InAs/(0 0 1) and InP(0 0 1))- ζ (4 × 2) reconstructed surfaces. Materials Science and Engineering B. 302. 117231–117231.
4.
Rebey, A., et al.. (2024). Magnetothermal properties of two-dimensional electron gas in matched AlGaAs/GaABiN structure. Applied Physics A. 130(5). 1 indexed citations
5.
Massoudi, Imen & A. Rebey. (2024). Advancing physical, dielectric, and solar photocatalytic efficiency with novel Ni0.95Cu0.03M0.02O (M = Co, Mo) semiconductors. Journal of Materials Science. 59(40). 19192–19209.
6.
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Fitouri, H., et al.. (2023). Thermal annealing effects on the physical properties of GaAsBi/GaAs/GaAs:Si structure. Journal of Umm Al-Qura University for Applied Sciences. 9(2). 164–175. 2 indexed citations
8.
Rebey, A., Ridha Hamdi, Imen Massoudi, & Béchir Hammami. (2022). In Situ Electrodeposition of Pb and Ag Applied on Fluorine Doped Tin Oxide Substrates: Comparative Experimental and Theoretical Study. Materials. 15(24). 8865–8865. 3 indexed citations
9.
Rebey, A., Ridha Hamdi, & Béchir Hammami. (2022). Analysis of growth mechanisms and microstructure evolution of Pb+2 minor concentrations by electrodeposition technique. The European Physical Journal Plus. 137(3). 4 indexed citations
10.
Bouzidi, Mohamed, et al.. (2022). In situ spectral reflectance analysis of the early stages of GaN thermal decomposition. Optik. 265. 169491–169491. 2 indexed citations
11.
Rebey, A., et al.. (2021). Study of Surface Stability and Electronic Structure of a Bi-terminated InAs (001) Surface Based on Ab Initio Calculations. Journal of Electronic Materials. 50(6). 3527–3536. 1 indexed citations
12.
Fitouri, H., et al.. (2020). A Systematic Methodology for the Analysis of Multicomponent Photoreflectance Spectra Applied to GaAsBi/GaAs Structure. Physics of the Solid State. 62(6). 1060–1066. 5 indexed citations
13.
Rebey, A., et al.. (2019). First-principles study of atomic and electronic structure of Bi/InP (001)-α 2 (2 × 4) and β 2 (2 × 4) surfaces. Materials Research Express. 6(10). 106303–106303. 2 indexed citations
14.
Rebey, A., et al.. (2017). Investigation of Optical Gain in 1.55 μm p-i-n GaNAsBi-Based DQWs. 14(10). 1700163. 2 indexed citations
15.
Fitouri, H., et al.. (2015). Bismuth catalyzed growth of GaAsBi nanowires by metalorganic vapor phase epitaxy. Materials Letters. 152. 298–301. 13 indexed citations
16.
17.
Rebey, A., et al.. (2013). Electronic band structure calculation of GaNAsBi alloys and effective mass study. Infrared Physics & Technology. 61. 88–93. 41 indexed citations
18.
Rebey, A., et al.. (2011). First-principles calculation of the physical properties of GaAs1-xBixalloys. Semiconductor Science and Technology. 26(10). 105020–105020. 34 indexed citations
19.
Bchetnia, A., A. Rebey, J.L. Fave, J. C. Bourgoin, & B. El Jani. (2006). Effects of thermal annealing onn-type GaAs:V grown by MOCVD. Journal of Physics D Applied Physics. 39(7). 1337–1341. 5 indexed citations
20.
Rebey, A., et al.. (2003). In situ reflectance monitoring of the growth and etching of AlAs/GaAs structures in MOVPE. Journal of Crystal Growth. 261(4). 450–457. 24 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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