R. R. Daniels

1.1k total citations
51 papers, 834 citations indexed

About

R. R. Daniels is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, R. R. Daniels has authored 51 papers receiving a total of 834 indexed citations (citations by other indexed papers that have themselves been cited), including 42 papers in Electrical and Electronic Engineering, 36 papers in Atomic and Molecular Physics, and Optics and 10 papers in Materials Chemistry. Recurrent topics in R. R. Daniels's work include Semiconductor materials and devices (17 papers), Semiconductor Quantum Structures and Devices (15 papers) and Advancements in Semiconductor Devices and Circuit Design (15 papers). R. R. Daniels is often cited by papers focused on Semiconductor materials and devices (17 papers), Semiconductor Quantum Structures and Devices (15 papers) and Advancements in Semiconductor Devices and Circuit Design (15 papers). R. R. Daniels collaborates with scholars based in United States, Switzerland and Italy. R. R. Daniels's co-authors include G. Margaritondo, A. D. Katnani, N. G. Stoffel, M. S. Shur, D.K. Arch, J. Abrokwah, J.P. Harrang, C. F. Brucker, A.T. Yang and L. J. Brillson and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

R. R. Daniels

50 papers receiving 793 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. R. Daniels United States 17 609 527 203 109 68 51 834
S. P. Kowalczyk United States 13 555 0.9× 602 1.1× 302 1.5× 167 1.5× 66 1.0× 21 860
A. M. Huber France 12 634 1.0× 554 1.1× 168 0.8× 93 0.9× 59 0.9× 34 834
H. Asonen Finland 18 504 0.8× 666 1.3× 148 0.7× 150 1.4× 94 1.4× 75 838
G. Oelgart Germany 15 426 0.7× 562 1.1× 201 1.0× 88 0.8× 56 0.8× 92 729
Myung-Ho Kang South Korea 17 274 0.4× 503 1.0× 273 1.3× 90 0.8× 65 1.0× 28 705
D. Bruchmann Germany 8 348 0.6× 509 1.0× 330 1.6× 190 1.7× 72 1.1× 9 780
P. Fṙanzosi Italy 13 478 0.8× 488 0.9× 221 1.1× 36 0.3× 73 1.1× 92 701
R.D. Schnell Germany 12 520 0.9× 553 1.0× 411 2.0× 263 2.4× 102 1.5× 12 892
A. Samsavar United States 16 342 0.6× 777 1.5× 219 1.1× 208 1.9× 114 1.7× 22 917
W. Czaja Switzerland 15 399 0.7× 321 0.6× 315 1.6× 63 0.6× 30 0.4× 47 622

Countries citing papers authored by R. R. Daniels

Since Specialization
Citations

This map shows the geographic impact of R. R. Daniels's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. R. Daniels with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. R. Daniels more than expected).

Fields of papers citing papers by R. R. Daniels

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. R. Daniels. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. R. Daniels. The network helps show where R. R. Daniels may publish in the future.

Co-authorship network of co-authors of R. R. Daniels

This figure shows the co-authorship network connecting the top 25 collaborators of R. R. Daniels. A scholar is included among the top collaborators of R. R. Daniels based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. R. Daniels. R. R. Daniels is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Daniels, R. R., et al.. (2005). Radiation hardness evaluation of a class V 32-bit floating-point digital signal processor. 70–78. 8 indexed citations
2.
Williams, Thomas J., Hiroshi Fuji, J.P. Harrang, et al.. (1990). High yield optical integration compatible InP-based circuits. 56. 181–184. 2 indexed citations
3.
Grider, D.E., et al.. (1989). Study of strain in pseudomorphic InGaAs heterostructures related to the enhanced performance of p-channel heterostructure field effect transistor devices. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 7(2). 371–375. 2 indexed citations
4.
Shur, M. S., J. Abrokwah, R. R. Daniels, & D.K. Arch. (1987). Mobility enhancement in highly doped GaAs quantum wells. Journal of Applied Physics. 61(4). 1643–1645. 6 indexed citations
5.
Arch, D.K., M. S. Shur, J. Abrokwah, & R. R. Daniels. (1987). Superlattice conduction in superlattice modulation-doped field-effect transistors. Journal of Applied Physics. 61(4). 1503–1509. 8 indexed citations
6.
Shur, M. S., et al.. (1987). Current-voltage and capacitance-voltage characteristics of heterostructure insulated-gate field-effect transistors. IEEE Transactions on Electron Devices. 34(8). 1650–1657. 21 indexed citations
7.
Abrokwah, J., et al.. (1986). Novel self-aligned gate AlxGa1−xAs/n-GaAs superlattice modulation-doped field-effect transistors. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 4(2). 615–617. 5 indexed citations
8.
Abrokwah, J., et al.. (1985). STABILITY OF SI-DOPED AlGaAs/GaAs MODFET STRUCTURES DURING CONVENTIONAL FURNACE AND RAPID OPTICAL ANNEALING.. MRS Proceedings. 56. 1 indexed citations
9.
Daniels, R. R., G. Margaritondo, C. Quaresima, P. Perfetti, & François Lévy. (1985). Summary Abstract: GaSe–Ge and GaSe–Si: Two possible examples of Schottky-like behavior of heterojunction interfaces. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 3(3). 979–980. 13 indexed citations
10.
Daniels, R. R., et al.. (1984). Electronic states of rutile dioxides: RuO2, IrO2, andRuxIr1−xO2. Physical review. B, Condensed matter. 29(4). 1813–1818. 43 indexed citations
11.
Daniels, R. R., et al.. (1984). GaAs(110)–In: The black sheep in a well-behaved interface family. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 2(2). 831–834. 21 indexed citations
12.
Quaresima, C., P. Perfetti, R. R. Daniels, & G. Margaritondo. (1984). Schottky barrier formation on amorphous semiconductors: Au on Ge(111), a-Ge, and hydrogenated a-Ge. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 2(2). 524–526. 5 indexed citations
13.
Davis, Glyn, W. Beck, N. E. Byer, R. R. Daniels, & G. Margaritondo. (1984). Deposition of Au overlayers onto cleaved (Hg,Cd)Te surfaces. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 2(2). 546–550. 21 indexed citations
14.
Brillson, L. J., et al.. (1984). Control and characterization of metal–InP and GaAs interface structures formed by laser-enhanced reactions. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 2(3). 591–595. 6 indexed citations
15.
Tolk, N. H., P. H. Bucksbaum, Neil Gershenfeld, et al.. (1984). Desorption induced by electronic transitions. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 2(1-3). 457–460. 63 indexed citations
16.
Cerrina, F., R. R. Daniels, & Vincenzo Fano. (1983). Inversion layers at PbTe interfaces. Applied Physics Letters. 43(2). 182–184. 7 indexed citations
17.
Stoffel, N. G., R. R. Daniels, L. J. Brillson, et al.. (1983). Photoemission studies of reactive diffusion and localized doping at II–VI compound semiconductor-metal interfaces. Physica B+C. 117-118. 848–850. 1 indexed citations
18.
Davis, Glyn, N. E. Byer, R. R. Daniels, & G. Margaritondo. (1983). Interaction of thin layers of Al and Ge with cleaved (Hg,Cd)Te surfaces. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 1(3). 1726–1729. 13 indexed citations
19.
Daniels, R. R., G. Margaritondo, Richard A. Heaton, & Chun C. Lin. (1983). Experimental study of the electronic structure of KMgF3. Physical review. B, Condensed matter. 27(6). 3878–3880. 29 indexed citations
20.
Daniels, R. R., et al.. (1982). Initial Adsorption State for Al on GaAs(110) and Its Role in the Schottky Barrier Formation. Physical Review Letters. 49(12). 895–898. 53 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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