A. Faigón
About
In The Last Decade
A. Faigón
57 papers receiving 439 citations
Peers
Comparison fields: 5 of 43
- Electrical and Electronic Engineering 407
- Materials Chemistry 54
- Hardware and Architecture 29
- Radiation 24
- Atomic and Molecular Physics, and Optics 22
Countries citing papers authored by A. Faigón
This map shows the geographic impact of A. Faigón's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Faigón with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Faigón more than expected).
Fields of papers citing papers by A. Faigón
This network shows the impact of papers produced by A. Faigón. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Faigón. The network helps show where A. Faigón may publish in the future.
Co-authorship network of co-authors of A. Faigón
This figure shows the co-authorship network connecting the top 25 collaborators of A. Faigón. A scholar is included among the top collaborators of A. Faigón based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Faigón. A. Faigón is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | 0 | |
| 2 | 0 | |
| 3 | 1 | |
| 4 | 6 | |
| 5 | 11 | |
| 6 | 4 | |
| 7 | 3 | |
| 8 | Ionizing radiation differential sensor based on thick gate oxide MOS transistors | 1 |
| 9 | Radiation response of Al 2 O 3 -based MOS capacitors under different bias conditions | 1 |
| 10 | 5 | |
| 11 | Electron trapping in Al 2 O 3 /HfO 2 nanolaminate-based MOS capacitors | 2 |
| 12 | Radiation effects in Al 2 O 3 -based MOS capacitors | 1 |
| 13 | 16 | |
| 14 | Ring oscillators response to irradiation and application to dosimetry | 3 |
| 15 | Stand alone MOS dosimetry system for high dose ionizing radiation | 1 |
| 16 | Temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation | 0 |
| 17 | Temperature and interface traps compensation in MOS Bias Controlled Cycled Dosimeters | 2 |
| 18 | 1 | |
| 19 | 5 | |
| 20 | 10 |
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.