Standout Papers

GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high-... 1995 2026 2005 2015 195
  1. GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high-temperature monocrystalline AlN buffer layers (1995)
    T. W. Weeks, M. D. Bremser et al. Applied Physics Letters

Immediate Impact

20 by Nobel laureates 18 from Science/Nature 57 standout
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Citing Papers

Supramolecular assembly of blue and green halide perovskites with near-unity photoluminescence
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1 intermediate paper

Works of W. G. Perry being referenced

Stimulated emission in GaN thin films in the temperature range of 300–700 K
1999 Nobel
Binding energy for the intrinsic excitons in wurtzite GaN
1996 Nobel

Author Peers

Author Last Decade Papers Cites
W. G. Perry 794 238 343 373 27 888
M. Vaille 756 198 377 381 24 823
T. Böttcher 852 318 388 477 33 956
T. Paskova 881 194 423 438 52 966
Ryan G. Banal 765 215 461 489 33 973
G. Kamler 769 176 364 408 58 878
Karine Hestroffer 599 104 339 429 34 856
K. Manabe 841 250 348 435 12 934
S. Dalmasso 833 226 403 484 42 995
P. G. Middleton 791 162 402 417 25 929
Hiroaki Okagawa 810 113 379 492 22 931

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