Immediate Impact

7 standout
Sub-graph 1 of 4

Citing Papers

Wurtzite and fluorite ferroelectric materials for electronic memory
2023 Standout
Volatile and Nonvolatile Memristive Devices for Neuromorphic Computing
2022 Standout
3 intermediate papers

Works of Robin Lee being referenced

A 16 nm 128 Mb SRAM in High-$\kappa$ Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications
2014

Author Peers

Author Last Decade Papers Cites
Robin Lee 141 26 7 5 143
J.J. Liaw 100 15 6 5 101
R. Mahnkopf 83 34 17 6 86
K. Kushida 94 16 16 8 97
Yong-Gee Ng 206 1 40 12 8 215
Ketul B. Sutaria 116 25 3 7 125
R. Tu 178 12 9 8 184
J.P. Libous 168 44 14 8 5 174
S. Springer 82 14 6 6 84
Jui-Jen Wu 179 33 13 9 180
Sanghoon Baek 104 24 5 6 111

All Works

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Rankless by CCL
2026