Standout Papers

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon... 1994 2026 2004 2015 466
  1. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon (1997)
    P.A. Stolk, H.‐J. Gossmann et al. Journal of Applied Physics
  2. Implantation and transient B diffusion in Si: The source of the interstitials (1994)
    D. J. Eaglesham, P.A. Stolk et al. Applied Physics Letters

Immediate Impact

5 by Nobel laureates 19 from Science/Nature 59 standout
Sub-graph 1 of 25

Citing Papers

Synaptic and neural behaviours in a standard silicon transistor
2025 StandoutNature
The future transistors
2023 StandoutNature
2 intermediate papers

Works of P.A. Stolk being referenced

Modeling statistical dopant fluctuations in MOS transistors
1998
Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
1997 Standout

Author Peers

Author Last Decade Papers Cites
P.A. Stolk 2658 1254 740 67 2.9k
B. L. Crowder 1482 682 690 38 2.1k
C. M. Osburn 2143 860 138 96 2.5k
S. Solmi 2783 1471 413 134 3.0k
K.J. Reeson 1654 1154 373 102 2.0k
E. H. Snow 3275 1121 117 28 3.5k
S. D. Brotherton 2161 666 276 79 2.3k
B. E. Weir 2487 1521 144 77 2.9k
J. Maserjian 2103 953 139 73 2.5k
F. B. McLean 3558 438 121 57 3.8k
E. P. Gusev 3865 640 217 74 4.2k

All Works

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