Immediate Impact

9 standout
Sub-graph 1 of 4

Citing Papers

Manifestation on the choice of a suitable combination of MIS for proficient Schottky diodes for optoelectronic applications: A comprehensive review
2024 Standout
Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives
2024 Standout
5 intermediate papers

Works of Kumud Ranjan being referenced

GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates
2019 Nobel
Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer
2019 Nobel
and 3 more

Author Peers

Author Last Decade Papers Cites
Kumud Ranjan 449 366 203 34 494
Kian Siong Ang 328 407 198 41 571
P. Javorka 434 362 183 35 486
Michael L. Schuette 494 433 218 29 565
Yang Lu 375 350 163 52 473
Kamal Hussain 280 260 198 46 420
Diego Marti 417 412 167 20 500
Brian M. McSkimming 312 309 196 20 460
N. Baron 403 328 177 25 465
H. Behmenburg 372 185 209 35 413
Torben R. Fortune 250 363 210 24 484

All Works

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Rankless by CCL
2026